David L. Jaeger

Exploring the limits of N-type ultra-shallow junction formation.

Low resistivity, near-surface doping in silicon represents a formidable challenge for both the microelectronics industry and future quantum electronic devices. Here we employ an ultra-high vacuum strategy to create highly abrupt doping profiles in silicon, which we characterize in situ using a four point probe scanning tunnelling microscope. Using a small molecule gaseous dopant source (PH3) which densely packs on a reconstructed silicon surface, followed by encapsulation in epitaxial silicon, we form highly conductive dopant sheets with subnanometer control of the depth profiles. This approach allows us to test the limits of ultra-shallow junction formation, with room temperature resistivities of 780 Ω/□ at an encapsulation depth of 4.3 nm, increasing to 23 kΩ/□ at an encapsulation depth of only 0.5 nm. We show that this depth-dependent resistivity can be accounted for by a combination of dopant segregation and surface scattering.

Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography

Fabrication of ultrasharp probes is of interest for many applications, including scanning probe microscopy and electron-stimulated patterning of surfaces. These techniques require reproducible ultrasharp metallic tips, yet the efficient and reproducible fabrication of these consumable items has remained an elusive goal. Here we describe a novel biased-probe field-directed sputter sharpening technique applicable to conductive materials, which produces nanometer and sub-nanometer sharp W, Pt-Ir and W-HfB(2) tips able to perform atomic-scale lithography on Si. Compared with traditional probes fabricated by etching or conventional sputter erosion, field-directed sputter sharpened probes have smaller radii and produce lithographic patterns 18-26% sharper with atomic-scale lithographic fidelity.

Bottom-up assembly of metallic germanium

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm−3) low-resistivity (10−4Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

Stacking of 2D Electron Gases in Ge Probed at the Atomic Level and Its Correlation to Low-Temperature Magnetotransport

Stacking of two-dimensional electron gases (2DEGs) obtained by δ-doping of Ge and patterned by scanning probe lithography is a promising approach to realize ultrascaled 3D epitaxial circuits, where multiple layers of active electronic components are integrated both vertically and horizontally. We use atom probe tomography and magnetotransport to correlate the real space 3D atomic distribution of dopants in the crystal with the quantum correction to the conductivity observed at low temperatures, probing if closely stacked δ-layers in Ge behave as independent 2DEGs. We find that at a separation of 9 nm the stacked-2DEGs, while interacting, still maintain their individuality in terms of electron transport and show long phase coherence lengths (∼220 nm). Strong vertical electron confinement is crucial to this finding, resulting in an interlayer scattering time much longer (∼1000 × ) than the scattering time within the dopant plane.

Pattern transfer of hydrogen depassivation lithography patterns into silicon with atomically traceable placement and size control

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the masks being used in order to maintain exquisite control over both feature size and feature density. Here, the authors demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top–down atomic control over nanofabrication. First, hydrogen depassivation lithography is performed on hydrogen terminated Si(100) using a scanning tunneling microscope, which spatially defined chemically reactive regions. Next, atomic layer deposition of titanium dioxide produces an etch-resistant hard mask pattern on these regions. Reactive ion etching then transfers the mask pattern onto Si with pattern height of 17 nm, critical dimension of approximately 6 nm, and full-pitch down to 13 nm. The effects of linewidth, template atomic defect density, and line-edge roughness are examined in ...

Exceptional increase in the creep life of magnesium rare-earth alloys due to localized bond stiffening

Several recent papers report spectacular, and unexpected, order of magnitude improvement in creep life of alloys upon adding small amounts of elements like zinc. This microalloying effect raises fundamental questions regarding creep deformation mechanisms. Here, using atomic-scale characterization and first principles calculations, we attribute the 600% increase in creep life in a prototypical Mg–rare earth (RE)–Zn alloy to multiple mechanisms caused by RE–Zn bonding—stabilization of a large volume fraction of strengthening precipitates on slip planes, increase in vacancy diffusion barrier, reduction in activated cross-slip, and enhancement of covalent character and bond strength around Zn solutes along the c-axis of Mg. We report that increased vacancy diffusion barrier, which correlates with the observed 25% increase in interplanar bond stiffness, primarily enhances the high-temperature creep life. Thus, we demonstrate that an approach of local, randomized tailoring of bond stiffness via microalloying enhances creep performance of alloys.Adding very small amounts of zinc to magnesium alloys containing rare earth elements dramatically improves their creep life. Here, the authors use first principles calculations and atomic-scale characterization to show that this is due to stiff covalent bonding of zinc and rare earth elements such as neodymium.

Atomically Traceable Nanostructure Fabrication

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process being used in order to maintain exquisite control over both feature size and feature density. Here, we demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. Hydrogen depassivation lithography is the first step of the nanoscale fabrication process followed by selective atomic layer deposition of up to 2.8 nm of titania to make a nanoscale etch mask. Contrast with the background is shown, indicating different mechanisms for growth on the desired patterns and on the H passivated background. The patterns are then transferred into the bulk using reactive ion etching to form 20 nm tall nanostructures with linewidths down to ~6 nm. To illustrate the limitations of this process, arrays of holes and lines are fabricated. The various nanofabrication process steps are performed at disparate locations, so process integration is discussed. Related issues are discussed including using fiducial marks for finding nanostructures on a macroscopic sample and protecting the chemically reactive patterned Si(100)-H surface against degradation due to atmospheric exposure.

Creep Response of a Zn Containing Mg-Nd-La Alloy

A significant improvement in creep resistance was achieved by adding Zn to a Mg-Nd-La alloy. Such an improvement is indicated by an order of magnitude reduction in minimum creep rate by and maintaining remarkably low creep-strain for prolonged duration compared to the non-Zn containing alloy. Addition of Zn resulted in the formation of high number density of fine scale γ” precipitates which presumably enhanced the load bearing capacity of Mg-Nd-La-Zn alloy. Observation of dislocation substructures further revealed that both intragranular precipitates as well as the interdendritic phase retarded dislocation motion.

Compositional Analysis of as-cast and Crystallized Pd 43 Cu 27 Ni 10 P 20 Bulk Metallic Glass

Noble metal-based bulk metallic glasses (BMG) composed of Pd-Cu-Ni-P are viewed as potential materials for use in thermoplastic nanofabrication/transfer mold lithography [1] and electrocatalytic applications [2]. The stability, formability and physical properties of these glasses are related to the kinetic pathways taken towards their decomposition and crystallization, which can be probed by analyzing on the nanometer scale the local composition and structure. Atom probe tomography (APT) is capable of atomic resolution elemental mapping and with the use of laser pulsing has proven to be capable of efficiently detecting nanometer scale compositional fluctuations indicative of phase separation in BMGs [3].