David O. Scanlon

Band alignment of rutile and anatase TiO2

The most widely used oxide for photocatalytic applications owing to its low cost and high activity is TiO₂. The discovery of the photolysis of water on the surface of TiO₂ in 1972 launched four decades of intensive research into the underlying chemical and physical processes involved. Despite much collected evidence, a thoroughly convincing explanation of why mixed-phase samples of anatase and rutile outperform the individual polymorphs has remained elusive. One long-standing controversy is the energetic alignment of the band edges of the rutile and anatase polymorphs of TiO₂ (ref. ). We demonstrate, through a combination of state-of-the-art materials simulation techniques and X-ray photoemission experiments, that a type-II, staggered, band alignment of ~ 0.4 eV exists between anatase and rutile with anatase possessing the higher electron affinity, or work function. Our results help to explain the robust separation of photoexcited charge carriers between the two phases and highlight a route to improved photocatalysts.

Self‐Regulation Mechanism for Charged Point Defects in Hybrid Halide Perovskites

Hybrid halide perovskites such as methylammonium lead iodide (CH3NH3PbI3) exhibit unusually low free-carrier concentrations despite being processed at low-temperatures from solution. We demonstrate, through quantum mechanical calculations, that an origin of this phenomenon is a prevalence of ionic over electronic disorder in stoichiometric materials. Schottky defect formation provides a mechanism to self-regulate the concentration of charge carriers through ionic compensation of charged point defects. The equilibrium charged vacancy concentration is predicted to exceed 0.4 % at room temperature. This behavior, which goes against established defect conventions for inorganic semiconductors, has implications for photovoltaic performance.

Controlling bulk conductivity in topological insulators: key role of anti-site defects.

Intrinsic topological insulators are realized by alloying Bi(2)Te(3) with Bi(2)Se(3). Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.

Sources of conductivity and doping limits in CdO from hybrid density functional theory.

CdO has been studied for decades as a prototypical wide band gap transparent conducting oxide with excellent n-type ability. Despite this, uncertainty remains over the source of conductivity in CdO and over the lack of p-type CdO, despite its valence band maximum (VBM) being high with respect to other wide band gap oxides. In this article, we use screened hybrid DFT to study intrinsic defects and hydrogen impurities in CdO and identify for the first time the source of charge carriers in this system. We explain why the oxygen vacancy in CdO acts as a shallow donor and does not display negative-U behavior similar to all other wide band gap n-type oxides. We also demonstrate that p-type CdO is not achievable, as n-type defects dominate under all growth conditions. Lastly, we estimate theoretical doping limits and explain why CdO can be made transparent by a large Moss-Burstein shift caused by suitable n-type doping.

Understanding the p-type defect chemistry of CuCrO2

CuCrO2 is the most promising Cu-based delafossite for p-type optoelectronic devices. Despite this, little is known about the p-type conduction mechanism of this material, with both CuI/CuII and CrIII/CrIV hole mechanisms being proposed. In this article we examine the electronic structure, thermodynamic stability and the p-type defect chemistry of this ternary compound using density functional theory with three different approaches to the exchange and correlation; the generalized-gradient-approximation of Perdew, Burke and Ernzerhof (PBE), PBE with an additional correction for on-site Coulombic interactions (PBE + U) and the nonlocal, screened-exchange hybrid functional HSE06. The fundamental band gap of CuCrO2 is demonstrated to be indirect in nature. Under all growth conditions, the dominant intrinsic p-type defect will be the Cu vacancy, with hole formation centered solely on the Cu sublattice. Mg doping is found to be significantly lower in energy than intrinsic defect formation, explaining the large increases in conductivity seen experimentally. Cu-rich/Cr-poor growth conditions are found to be optimal for both intrinsic and extrinsic (Mg doping) defect formation, and should be adopted to maximize performance.

Beyond methylammonium lead iodide: prospects for the emergent field of ns2 containing solar absorbers

The field of photovoltaics is undergoing a surge of interest following the recent discovery of the lead hybrid perovskites as a remarkably efficient class of solar absorber. Of these, methylammonium lead iodide (MAPI) has garnered significant attention due to its record breaking efficiencies, however, there are growing concerns surrounding its long-term stability. Many of the excellent properties seen in hybrid perovskites are thought to derive from the 6s2 electronic configuration of lead, a configuration seen in a range of post-transition metal compounds. In this review we look beyond MAPI to other ns2 solar absorbers, with the aim of identifying those materials likely to achieve high efficiencies. The ideal properties essential to produce highly efficient solar cells are discussed and used as a framework to assess the broad range of compounds this field encompasses. Bringing together the lessons learned from this wide-ranging collection of materials will be essential as attention turns toward producing the next generation of solar absorbers.

Small polarons in Nb- and Ta-doped rutile and anatase TiO2

Experimental studies of thin-film Nb- and Ta-doped TiO2 have reported that doped anatase is highly conductive, yet doped rutile is semiconducting. Standard DFT functionals (LDA, GGA) predict that for doped anatase TiO2 the excess charge occupies the bottom of the conduction band, and is delocalised over all the Ti atoms. This has previously been proposed as the source of the experimentally observed high conductivity. GGA predicts a similar metallic system for Nb-doped rutile, however, in contradiction with experimental data that characterise doped rutile as a semiconductor with a localised gap state. This demonstrates that standard DFT functionals cannot explain the difference in experimental behaviour between polymorphs. Supplementing GGA with a “+ U” on-site Coulomb correction recovers an electronic structure for Nb-doped rutile TiO2 that is in agreement with the experimental data; a localised gap state is seen, corresponding to a small polaron on a single Ti site. GGA + U also predicts a small-polaronic Ti3+ gap state within a semiconducting system for {Nb,Ta}-doped anatase. On this basis we suggest the experimental variance between polymorphs in doped thin films is not an inherent property of the bulk crystals, but is due to other factors, e.g. additional defects or sample morphology, dependent on the synthesis history. For both anatase and rutile the defect feature is found to be insensitive to the identity of the dopant, and similar Ti3+ polarons are expected generally for doping where electrons are donated to the Ti lattice.

Understanding conductivity anomalies in CuI-based delafossite transparent conducting oxides: Theoretical insights

The Cu(I)-based delafossite structure, Cu(I)M(III)O(2), can accommodate a wide range of rare earth and transition metal cations on the M(III) site. Substitutional doping of divalent ions for these trivalent metals is known to produce higher p-type conductivity than that occurring in the undoped materials. However, an explanation of the conductivity anomalies observed in these p-type materials, as the trivalent metal is varied, is still lacking. In this article, we examine the electronic structure of Cu(I)M(III)O(2) (M(III)=Al,Cr,Sc,Y) using density functional theory corrected for on-site Coulomb interactions in strongly correlated systems (GGA+U) and discuss the unusual experimental trends. The importance of covalent interactions between the M(III) cation and oxygen for improving conductivity in the delafossite structure is highlighted, with the covalency trends found to perfectly match the conductivity trends. We also show that calculating the natural band offsets and the effective masses of the valence band maxima is not an ideal method to classify the conduction properties of these ternary materials.

Can Pb-Free Halide Double Perovskites Support High-Efficiency Solar Cells?

The methylammonium lead halides have become champion photoactive semiconductors for solar cell applications; however, issues still remain with respect to chemical instability and potential toxicity. Recently, the Cs2AgBiX6 (X = Cl, Br) double perovskite family has been synthesized and investigated as stable nontoxic replacements. We probe the chemical bonding, physical properties, and cation anti-site disorder of Cs2AgBiX6 and related compounds from first-principles. We demonstrate that the combination of Ag(I) and Bi(III) leads to the wide indirect band gaps with large carrier effective masses owing to a mismatch in angular momentum of the frontier atomic orbitals. The spectroscopically limited photovoltaic conversion efficiency is less than 10% for X = Cl or Br. This limitation can be overcome by replacing Ag with In or Tl; however, the resulting compounds are predicted to be unstable thermodynamically. The search for nontoxic bismuth perovskites must expand beyond the Cs2AgBiX6 motif.

(CH3NH3)2Pb(SCN)2I2: A More Stable Structural Motif for Hybrid Halide Photovoltaics?

Hybrid halide perovskites have recently emerged as a highly efficient class of light absorbers; however, there are increasing concerns over their long-term stability. Recently, incorporation of SCN(-) has been suggested as a novel route to improving stability without negatively impacting performance. Intriguingly, despite crystallizing in a 2D layered structure, (CH3NH3)2Pb(SCN)2I2 (MAPSI) possesses an ideal band gap of 1.53 eV, close to that of the 3D connected champion hybrid perovskite absorber, CH3NH3PbI3 (MAPI). Here, we identify, using hybrid density functional theory, the origin of the smaller than expected band gap of MAPSI through a detailed comparison with the electronic structure of MAPI. Furthermore, assessment of the MAPSI structure reveals that it is thermodynamically stable with respect to phase separation, a likely source of the increased stability reported in experiment.