David S. L. Abergel

Infrared absorption by graphene–hBN heterostructures

We propose a theory of optical absorption in monolayer graphene–hexagonal boron nitride (hBN) heterostructures. In highly oriented heterostructures, the hBN underlay produces a long-range moire superlattice potential for the graphene electrons which modifies the selection rules for absorption of incoming photons in the infrared to visible frequency range. The details of the absorption spectrum modification depend on the relative strength of the various symmetry-allowed couplings between the graphene electrons and the hBN, and the resulting nature of the reconstructed band structure.

Two-photon absorption in gapped bilayer graphene with a tunable chemical potential

Despite the now vast body of two-dimensional materials under study, bilayer graphene remains unique in two ways: it hosts a simultaneously tunable band gap and electron density; and stems from simple fabrication methods. These two advantages underscore why bilayer graphene is critical as a material for optoelectronic applications. In the work that follows, we calculate the one- and two-photon absorption coefficients for degenerate interband absorption in a graphene bilayer hosting an asymmetry gap and adjustable chemical potential-all at finite temperature. Our analysis is comprehensive, characterizing one- and two-photon absorptive behavior over wide ranges of photon energy, gap, chemical potential, and thermal broadening. The two-photon absorption coefficient for bilayer graphene displays a rich structure as a function of photon energy and band gap due to the existence of multiple absorption pathways and the nontrivial dispersion of the low energy bands. This systematic work will prove integral to the design of bilayer-graphene-based nonlinear optical devices.

The role of spin-orbit coupling in topologically protected interface states in Dirac materials

We highlight the fact that two-dimensional (2D) materials with Dirac-like low energy band structures and spin-orbit coupling (SOC) will produce linearly dispersing topologically protected Jackiw-Re ...

Effects of a tilted magnetic field in a Dirac double layer

We calculate the energy spectrum of a Dirac double layer, where each layer has the Dirac electronic dispersion, in the presence of a tilted magnetic field and small interlayer tunneling. We show that the energy splitting between the Landau levels has an oscillatory dependence on the in-plane magnetic field and vanishes at a series of special tilt angles of the magnetic field. Using a semiclassical analysis, we show that these special tilt angles are determined by the Berry phase of the Dirac Hamiltonian. The interlayer tunneling conductance also exhibits an oscillatory dependence on the magnetic field tilt angle, known as the angular magnetoresistance oscillations (AMRO). Our results are applicable to graphene double layers and thin films of topological insulators.

Infrared absorption of closely aligned heterostructures of monolayer and bilayer graphene with hexagonal boron nitride

We model optical absorption of monolayer and bilayer graphene on hexagonal boron nitride for the case of closely aligned crystal lattices. We show that perturbations with different spatial symmetry ...

Robustness of topologically protected transport in graphene-boron nitride lateral heterostructures

Previously, graphene nanoribbons set in lateral heterostructures with hexagonal boron nitride were predicted to support topologically protected states at low energy. We investigate how robust the transport properties of these states are against lattice disorder. We find that forms of disorder that do not couple the two valleys of the zigzag graphene nanoribbon do not impact the transport properties at low bias, indicating that these lateral heterostructures are very promising candidates for chip-scale conducting interconnects. Forms of disorder that do couple the two valleys, such as vacancies in the graphene ribbon, or substantial inclusions of armchair edges at the graphene-hexagonal boron nitride interface will negatively affect the transport. However, these forms of disorder are not commonly seen in current experiments.