David Schleuning

Robust hard-solder packaging of conduction cooled laser diode bars

We present the reliability of high-power laser diodes utilizing hard solder (AuSn) on a conduction-cooled package (HCCP). We present results of 50 W hard-pulse operation at 8xx nm and demonstrate a reliability of MTTF > 27 khrs (90% CL), which is an order of magnitude improvement over traditional packaging. We also present results at 9xx nm with a reliability of MTTF >17 khrs (90% CL) at 75 W. We discuss finite element analysis (FEA) modeling and time dependent temperature measurements combined with experimental life-test data to quantify true hard-pulse operation. We also discuss FEA and measured stress profiles across laser bars comparing soft and hard solder packaging.

Al-glass kW fibre laser end-pumped by MCCP-cooled diode stacks

High power industrial fibre lasers are typically pumped by single emitter diodes, with pump power aggregation and the fibre laser cavity being achieved in a monolithic “all-bibre” architecture comprising fused fiber bundles, fiber Bragg grating reflectors and numerous splices. [1]. The gain fiber utilizes a low index polymer coating to provide the wave-guiding for the multimode pump as well as for compatibility with the NA increase (typically 0.22–0.45) which occurs in the fused taper combiners. While this all fibre approach has been shown to be viable, it is not trivial to implement at power levels in excess of several hundred watts Issues include polymer coating degradation, transverse mode-coupling induced instability at splices or FBGs, grating walk-off, and modal instability, [2]. The latter issue arises because these fiber laser designs are focused on single-transverse-mode operation, [3.4], even though the fibres themselves are multimode to avoid nonlinear impairments. This is despite the face that most cutting and welding applications actually utilize a multimode fibre for delivery to the cutting head. The BBP of such systems is typically 2.5mm.mRad at a wavelength around 1080nm. However, single mode operation allows power scaling by incoherently combining several lower power fiber lasers into a single beam with that BPP.

915 nm laser bar-based high-performance sources for fiber laser pumping

Fiber lasers have made significant progress in terms of power output, beam quality and operational robustness over the past few years. Key to this progress has been advances in two technologies - fiber technology and 9xx nm diode laser pump technology based on single emitters. We present the operational characteristics of our new high brightness 9xx nm fiber laser pump sources based on diode laser bars and diode laser bar arrays and discuss the design trade offs involved for realization of devices focused on this application. These trade offs include achieving the lowest slow axis divergence while maintaining high wall plug efficiency and minimizing facet power density to maximize reliability.

Progress in high-brightness diode laser development based on tailored diode laser bars

The state-of-the-art beam quality from high-brightness, fiber-coupled diode laser modules has been significantly improved in the last few years, with commercially available modules now rivaling the brightness of lamp-pumped Nd:YAG lasers. We report progress in the development of these systems for a variety of applications, such as material processing and pumping of solid state and fiber lasers. Experimental data and simulation results for wavelength stabilized outputs from 200 µm diameter fibers at 975 nm for power levels greater than 200 W will be presented. The enabling technology in these products is supported by key developments in tailored diode laser bars with low slow axis divergence, micro-optics, diode laser packaging, and modular architecture.

Material survey for packaging semiconductor diode lasers

We present results from a survey of materials used for packaging semiconductor lasers, including Cu, CuW, BeO, diamond composite and other advanced materials. We present the results of residual bonding stress from various solders and consider the direct effects on wavelength and spectral width. We also provide data on the second order effects of threshold current and slow axis divergence. Additionally, we consider the heat spreading through different materials for a laser bar and present modeled and experimental data on the thermal performance. Finally, we consider the reliability under on-off life-testing and thermal cycling tests.

High-efficiency and high-reliability 9xx-nm bars and fiber-coupled devices at Coherent

Ongoing optimization of epitaxial design within Coherent device engineering has led to a family of high power-conversion-efficiency (PCE) products on conductively cooled packages (CCP) and fiber array packages (FAP). At a 25°C heat sink temperature, the PCE was measured at 71.5% with 75W CW output power on 30% fill-factor (FF) bars with passive cooling. At heat sink temperatures as high as 60°C the PCE of these bars is still maintained above 60%. Powered by such high efficiency 9xx nm diodes, Coherent FAP products have consistently exceeded 55% PCE up to 50W power levels, with 62% PCE demonstrated out of the fiber. High linear-power-density (LPD) operation of 100μm x 7-emitter bars at LPD = 80 mW/μm was also demonstrated. Bars with 7-emitter were measured up to 140W QCW power before catastrophic optical mirror damage (COMD) occurred, which corresponds to a COMD value of 200mW/μm or 2D facet power density of 29.4 MW/cm2. Leveraging these improvements has enabled high power FAPs with >90W CW from an 800μm-diameter fiber bundle. Extensive reliability testing has already accumulated 400,000 total real-time device hours at a variety of accelerated and non-accelerated operating conditions. A random failure rate <0.5% per kilo-hours and gradual degradation rate <0.4% per kilo-hours have been observed. For a 30% FF 50W CW 9xx nm bar, this equates to >30,000 hours of median lifetime at a 90% confidence level. More optimized 30% FF 9xx nm bars are under development for power outputs up to 80W CW with extrapolated median lifetimes greater than 20,000 hours.

High power single lateral mode 1050 nm laser diode bar

We present recent development of single lateral mode 1050 nm laser bars. The devices are based on an InGaAs/AlGaAs single quantum well and an asymmetric large optical cavity waveguide structure. By optimizing the AlGaAs composition, doping profiles, and QW thickness, the low internal loss of 0.5 cm-1 and high internal quantum efficiency of 98% are obtained. A standard bar (10% fill factor; 4mm cavity length) reaches 72% peak electro-optical efficiency and 1.0 W/A slope efficiency at 25°C. To achieve high single lateral mode power, the current confinement and optical loss profile in lateral direction are carefully designed and optimized to suppress higher order lateral modes. We demonstrate 1.5W single lateral mode power per emitter from a 19-emitter 10mm bar at 25°C. High electro-optical efficiency are also demonstrated at 25°C from two separate full-bar geometries on conduction cooled packaging: 20 W with <50% electro-optical efficiency from a 19-emitter bar and 50 W with <45% electro-optical efficiency from a 50-emitter bar.

Improved long wavelength 14xx and 19xx nm InGaAsp/InP lasers

We report on our progress developing long wavelength high power laser diodes based on the InGaAsP/InP alloy system emitting in the range from 1400 to 2010 nm. Output power levels exceeding 50 Watts CW and 40% conversion efficiency were obtained at 1470 nm wavelength from 20% fill factor (FF) bars with 2 mm cavity length mounted on water cooled plates. Using these stackable plates we built a water cooled stack with 8 bars, successfully demonstrating 400 W at 1470 nm with good reliability. In all cases the maximum conversion efficiency was greater than 40% and the maximum power achievable was limited by thermal rollover. For lasers emitting in the range from 1930 to 2010 nm we achieved output power levels over 15 W and 20 % conversion efficiency from 20% FF bars with 2 mm cavity length on a conductively cooled platform. Life testing of the 1470 nm lasers bars over 14,000 hours under constant current mode has shown no significant degradation.

Advances in 808nm high power diode laser bars and single emitters

Key applications for 780-830nm high power diode lasers include the pumping of various gas, solid state, and fiber laser media; medical and aesthetic applications including hair removal; direct diode materials processing; and computer-to-plate (CtP) printing. Many of these applications require high brightness fiber coupled beam delivery, in turn requiring high brightness optical output at the bar and chip level. Many require multiple bars per system, with aggregate powers on the order of kWs, placing a premium on high power and high power conversion efficiency. This paper presents Coherent’s recent advances in the production of high power, high brightness, high efficiency bars and chips at 780-830nm. Results are presented for bars and single emitters of various geometries. Performance data is presented demonstrating peak power conversion efficiencies of 63% in CW mode. Reliability data is presented demonstrating <50k hours lifetime for products including 60W 18% fill factor and 80W 28% fill factor conduction cooled bars, and <1e9 shots lifetime for 500W QCW bars.

A fiber-coupled 9xx module with tap water cooling

A novel, 9XX nm fiber-coupled module using arrays of highly reliable laser diode bars has been developed. The module is capable of multi-kW output power in a beam parameter product of 80 mm-mrad. The module incorporates a hard-soldered, isolated stack package compatible with tap-water cooling. Using extensive, accelerated multi-cell life-testing, with more than ten million device hours of test, we have demonstrated a MTTF for emitters of >500,000 hrs. In addition we have qualified the module in hard-pulse on-off cycling and stringent environmental tests. Finally we have demonstrated promising results for a next generation 9xx nm chip design currently in applications and qualification testing