Dean M. Welsh
Dow Chemical Company
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Featured researches published by Dean M. Welsh.
Optical Science and Technology, SPIE's 48th Annual Meeting | 2003
David J. Brennan; Paul H. Townsend; Dean M. Welsh; Mitchell G. Dibbs; Jeff M. Shaw; Jessica L. Miklovich; Robyn B. Boeke; Ana Claudia Arias; Lisa Creswell; J. Devin MacKenzie; Catherine Ramsdale; Anoop Menon; Henning Sirringhaus
Well-characterized F8T2 polyfluorene (Dow Chemical) has been prepared with weight average molecular weights (Mw) ranging from about 20,000 to 120,000. This semiconducting polymer has been used by Plastic Logic to fabricate arrays of 4,800 thin film transistors (TFTs) with 50 dpi, to be used as backplanes for active matrix displays. In this paper, the effects that molecular weight and thermal treatment have on the electrical characteristics of F8T2-based TFTs are reported. First, transistor performance improves with increasing molecular weight, with maximum values of TFT mobility approaching 1x 10-2 cm2 /V-s. Consistently higher mobilities are obtained when the F8T2 semiconductor makes contact with PEDOT/PSS versus gold electrodes. Alignment of F8T2 on a rubbed polyimide substrate is maintained after quenching, as determined by measurement of the dichroic ratios. Early-stage results on the development of inks based on F8T2 polyfluorene are also reported.
SID Symposium Digest of Technical Papers | 2005
Wencheng Su; Dmitry Poplavskyy; Franky So; Howard Clearfield; Dean M. Welsh; Weishi Wu
Results from carrier transport measurements indicate a strong imbalance of carriers in some polymer OLED devices. With a cross-linkable hole transporting layer added to improve the carrier balance, we have demonstrated 7X enhancement in pulse lifetime.
Organic Light Emitting Materials and Devices XVIII | 2014
Kenneth L. Kearns; Hong-Yeop Na; Robert D. J. Froese; Sukrit Mukhopadhyay; Hunter Woodward; Dean M. Welsh; Timothy S. De Vries; David D. Devore; Peter Trefonas Iii; Liang Hong
Recent progress has shown that molecular orientation in vapor-deposited glasses can affect device performance. The deposition process can result in films where the molecular axis of the glass material is preferentially ordered to lie parallel to the plane of the substrate. Here, materials made within Dow’s Electronic Materials business showed enhanced performance when the orientation of the molecules, as measured by variable angle spectroscopic ellipsometry, was oriented in a more parallel fashion as compared to other materials. For one material, the anisotropic packing was observed in the as-deposited glass and was isotropic for solution-cast and annealed films. In addition, the density of an as-deposited N,N′-bis(naphthalene-1-yl)-N,N′-bis(phenyl)-2,2′-dimethylbenzidine (NPD) film was 0.8% greater than what was realized from slowly cooling the supercooled liquid. This enhanced density indicated that vapor-deposited molecules were packing more closely in addition to being anisotropic. Finally, upon heating the NPD film into the supercooled liquid state, both the density and anisotropic packing of the as-deposited glass was lost.
MRS Proceedings | 2004
David J. Brennan; Yu Chen; Shaoguang Feng; James P. Godschalx; Gary E. Spilman; Paul H. Townsend; Scott Kisting; Mitchell G. Dibbs; Jeff M. Shaw; Dean M. Welsh; Jessica L. Miklovich; Debra Stutts
New poly(fluorene-thiophene) alternating copolymers are described in which either the dioctylfluorene or bithiophene units in poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) are replaced by other fluorene or thiophene-based groups, respectively. Improvements in solubility are realized when the bithiophene unit of F8T2 is replaced by dihexylterthiophene or dihexylpentathiophene units. Melting temperatures are also lowered by 50 – 100°C in these polymers when compared to F8T2. Replacement of the bithiophene unit of F8T2 with a dihexylpentathiophene unit also results in a significant improvement in hysteresis (< 2 V vs. 3.5 – 5 V for F8T2). Initial results are also reported on the thermal cleavage of the C8 side groups of F8T2, which yields an insoluble polymeric semiconductor film that continues to exhibit transistor switching characteristics as part of a bottom gate device.
Microelectronics Journal | 2004
Weishi Wu; Michael Inbasekaran; Michelle L. Hudack; Dean M. Welsh; Wanglin Yu; Yang Cheng; Chun Wang; Shari L. Kram; Melissa Tacey; Mark T. Bernius; Robert Fletcher; Kelly Kiszka; Steve Munger; James J. O'brien
Archive | 2002
Michael Inbasekaran; Yang Cheng; Scott Gaynor; Michelle L. Hudack; Chun Wang; Dean M. Welsh; Weishi Wu
Archive | 2003
Michael Inbasekaran; Yang Cheng; Scott Gaynor; Michelle L. Hudack; Chun Wang; Dean M. Welsh; Weishi Wu
Archive | 2005
David J. Brennan; Dean M. Welsh; Yu Chen; Jeff M. Shaw
Archive | 2011
Oktay Uzun; Dean M. Welsh; David R. Wilson; Ravi B. Shankar; David J. Brennan
Archive | 2004
Mitchell G. Dibbs; Michael Inbasekaran; Paul H. Townsend; Kenneth L. Foster; Shaoguang Feng; David J. Brennan; Qing Shan J. Niu; James P. Godschalx; Dean M. Welsh; Ray E. Midland Drumright