Debasree Chowdhury

Temperature and high fluence induced ripple rotation on Si(100) surface

Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20

High fluence effect on Si ripple morphology developed by low energy ion beam sputtering

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Oxygen adsorption by supported size-selected copper clusters: Substrate effects

C to 450

Fabrication of Anisotropic Regular Nanostructures on GaAs Surface due to Normal Incidence Ion Irradiation: A study on Temperature Dependence

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Characterization of submonolayer film composed of soft-landed copper nanoclusters on HOPG

C and at each temperature, the ion fluence is systematically varied in a wide range from

Hexagonally ordered nanodots: Result of substrate rotation during oblique incidence low energy IBS

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Production of ordered and pure Si nanodots at grazing ion beam sputtering under concurrent substrate rotation

1

Homoepitaxy of germanium by hyperthermal ion irradiation

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Nanorippling of ion irradiated GaAs (001) surface near the sputter-threshold energy

10

Tuning of Nanopatterns on Si (100) Substrate: Role of Ion Beam Processing Parameters During Sputtering

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