Deepnarayan Biswas

Spin and valley control of free carriers in single-layer WS2

The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high quality single layer of WS

Complex spectral evolution in a BCS superconductor, ZrB12

_2

Surface bulk differences in a conventional superconductor, ZrB12

. We observe that the optically generated free hole density in a single valley can be increased by a factor of 2 using a circularly polarized optical excitation. Moreover, we find that by varying the photon energy of the excitation we can tune the free carrier density in a given spin-split state around the valence band maximum of the material. The control of the photon energy and polarization of the excitation thus permits us to selectively excite free electron-hole pairs with a given spin and within a single valley.

Narrow-band anisotropic electronic structure of ReS2

We investigate the electronic structure of a complex conventional superconductor, ZrB12 employing high resolution photoemission spectroscopy and ab initio band structure calculations. The experimental valence band spectra could be described reasonably well within the local density approximation. Energy bands close to the Fermi level possess t2g symmetry and the Fermi level is found to be in the proximity of quantum fluctuation regime. The spectral lineshape in the high resolution spectra is complex exhibiting signature of a deviation from Fermi liquid behavior. A dip at the Fermi level emerges above the superconducting transition temperature that gradually grows with the decrease in temperature. The spectral simulation of the dip and spectral lineshape based on a phenomenological self energy suggests finite electron pair lifetime and a pseudogap above the superconducting transition temperature.

Importance of ligands in the electronic properties of FeTe0.6Se0.4

We studied the electronic structure of a conventional superconductor, ZrB(12) using high resolution x-photoemission spectroscopy and single crystalline samples. Experimental results with different bulk sensitivity reveals boron deficiency and different valence states of Zr at the surface relative to the bulk. Signature of a satellite features is observed in the Zr core level spectra corresponding to the bulk of the material suggesting importance of electron correlation among the conduction electrons in the bulk while the surface appears to be uncorrelated. These results provide an insight in fabricating devices based on such superconductors.

Anomalies of a topologically ordered surface

We have used angle-resolved photoemission spectroscopy to investigate the band structure of

Surface-interface anomalies and topological order in Bi2Se3

{\mathrm{ReS}}_{2}

Complex temperature evolution of the electronic structure of CaFe2As2

, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of structural distortion and spin-orbit coupling. We further show how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zigzag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone center along

Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2

{k}_{z}

Composition dependence of M

. These experiments are in good agreement with our density-functional theory calculations, shedding light on the bulk electronic structure of