Deniz Cakir

Mechanical and thermal properties of h-MX2 (M = Cr, Mo, W; X = O, S, Se, Te) monolayers: A comparative study

Using density functional theory, we obtain the mechanical and thermal properties of MX2 monolayers (where Mu2009=u2009Cr, Mo, W and Xu2009=u2009O, S, Se, Te). The Γ-centered phonon frequencies (i.e., A1, A2″, E′, and E″), relative frequency values of A1, and E′ modes, and mechanical properties (i.e., elastic constants, Young modulus, and Poissons ratio) display a strong dependence on the type of metal and chalcogenide atoms. In each chalcogenide (metal) group, transition-metal dichalcogenides (TMDCs) with W (O) atom are found to be much stiffer. Consistent with their stability, the thermal expansion of lattice constants for TMDCs with O (Te) is much slower (faster). Furthermore, in a heterostructure of these materials, the difference of the thermal expansion of lattice constants between the individual components becomes quite tiny over the whole temperature range. The calculated mechanical and thermal properties show that TMDCs are promising materials for heterostructures.

Role of intrinsic molecular dipole in energy level alignment at organic interfaces

The energy level alignment in metal-organic and organic-organic junctions of the widely used materials tris-(8-hydroxyquinoline)aluminum (Alq3) and 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA) is investigated. The measured alignment schemes for single and bilayer films of Alq3 and NTCDA are interpreted with the integer charge transfer (ICT) model. Single layer films of Alq3 feature a constant vacuum level shift of ∼0.2–0.4u2009eV in the absence of charge transfer across the interface. This finding is attributed to the intrinsic dipole of the Alq3 molecule and (partial) ordering of the molecules at the interfaces. The vacuum level shift changes the onset of Fermi level pinning, as it changes the energy needed for equilibrium charge transfer across the interface.

Modeling charge transfer at organic donor-acceptor semiconductor interfaces

We develop an integer charge transfer model for the potential steps observed at interfaces between donor and acceptor molecular semiconductors. The potential step can be expressed as the difference between the Fermi energy pinning levels of electrons on the acceptor material and holes on the donor material, as determined from metal-organic semiconductor contacts. These pinning levels can be obtained from simple density functional theory calculations.

Magnetic Properties of bcc-Fe(001)/C-60 Interfaces for Organic Spintronics

The magnetic structure of the interfaces between organic semiconductors and ferromagnetic contacts plays a key role in the spin injection and extraction processes in organic spintronic devices. We present a combined computational (density functional theory) and experimental (X-ray magnetic circular dichroism) study on the magnetic properties of interfaces between bcc-Fe(001) and C(60) molecules. C(60) is an interesting candidate for application in organic spintronics due to the absence of hydrogen atoms and the associated hyperfine fields. Adsorption of C(60) on Fe(001) reduces the magnetic moments on the top Fe layers by ∼6%, while inducing an antiparrallel magnetic moment of ∼-0.2 μ(B) on C(60). Adsorption of C(60) on a model ferromagnetic substrate consisting of three Fe monolayers on W(001) leads to a different structure but to very similar interface magnetic properties.