Dennis Valbjørn Christensen

A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3.

The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping.

Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metal-insulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La(1-x)Sr(x)MnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikov-de Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.

Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp and exhibits a high electron mobility exceeding 60,000 cm(2) V(-1) s(-1) at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.

The demagnetizing field of a nonuniform rectangular prism

The effect of demagnetization on the magnetic properties of a rectangular ferromagnetic prism under nonuniform conditions is investigated. A numerical model for solving the spatially varying internal magnetic field is developed, validated, and applied to relevant cases. The demagnetizing field is solved by an analytical calculation and the coupling between applied field, the demagnetization tensor field, and spatially varying temperature is solved through iteration. We show that the demagnetizing field is of great importance in many cases and that it is necessary to take into account the nonuniformity of the internal field, especially for nonconstant temperature distributions and composite magnetic materials.

An optimized magnet for magnetic refrigeration

A magnet designed for use in a magnetic refrigeration device is presented. The magnet is designed by applying two general schemes for improving a magnet design to a concentric Halbach cylinder magnet design and dimensioning and segmenting this design in an optimum way followed by the construction of the actual magnet. The final design generates a peak value of 1.24 T, an average flux density of 0.9 T in a volume of 2 L using only 7.3 L of magnet, and has an average low flux density of 0.08 T also in a 2 L volume. The working point of all the permanent magnet blocks in the design is very close to the maximum energy density. The final design is characterized in terms of a performance parameter, and it is shown that it is one of the best performing magnet designs published for magnetic refrigeration.

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO_{3}.

The two-dimensional metal forming at the interface between an oxide insulator and SrTiO_{3} provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO_{3} heterointerface based on the modulation-doped amorphous-LaAlO_{3}/SrTiO_{3} heterostructure, which exhibits both high electron mobility exceeding 10,000  cm^{2}/V s and low carrier density on the order of ∼10^{12}  cm^{-2}. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional sub-bands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.

Analysis of the internal heat losses in a thermoelectric generator

A 3D thermoelectric numerical model is used to investigate different internal heat loss mechanisms for a thermoelectric generator with bismuth telluride p- and n-legs. The model considers all thermoelectric effects, temperature dependent material parameters and simultaneous convective, conductive and radiative heat losses, including surface to surface radiation. For radiative heat losses it is shown that for the temperatures considered here, surface to ambient radiation is a good approximation of the heat loss. For conductive heat transfer the module efficiency is shown to be comparable to the case of radiative losses. Finally, heat losses due to internal natural convection in the module is shown to be negligible for the millimetre sized modules considered here. The combined case of radiative and conductive heat transfer resulted in the lowest efficiency. The optimized load resistance is found to decrease for increased heat loss. The leg dimensions are varied for all heat losses cases and it is shown that the ideal way to construct a TEG module with minimal heat losses and maximum efficiency is to either use a good insulating material between the legs or evacuate the module completely, and use small and wide legs closely spaced.

Spatially resolved measurements of the magnetocaloric effect and the local magnetic field using thermography

The magnetocaloric effect causes a magnetic material to change temperature upon application of a magnetic field. Here, spatially resolved measurements of the adiabatic temperature change are performed on a plate of gadolinium using thermography. The adiabatic temperature change is used to extract the corresponding change in the local magnetic field strength. The measured temperature change and local magnetic field strength are compared to results obtained with a numerical model, which takes demagnetization into account and employs experimental data.

Controlling interfacial states in amorphous/crystalline LaAlO3/SrTiO3 heterostructures by electric fields

The tunable metal-insulator transition in crystalline LaAlO3/SrTiO3 heterostructures constitutes a central element in the range of remarkable interface properties that has made this oxide system subject to extensive research. Recently, metallic interfaces have also been realized when depositing amorphous LaAlO3 films on SrTiO3. Here, we present a non-volatile and reversible tuning of the interface conductivity by more than 3 orders of magnitude at room temperature by applying an electric field to such amorphous/crystalline heterostructures with amorphous LaAlO3 film thicknesses of ∼2 nm. We show that the tunability is strongly temperature dependent, and demonstrate a simple protocol for enhancing the tunability.

Evidence of weak superconductivity at the room-temperature grown LaAlO3/SrTiO3 interface

The two-dimensional electron gas at the crystalline LaAlO