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Dive into the research topics where Deok-Hwang Kwon is active.

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Featured researches published by Deok-Hwang Kwon.


Nature Nanotechnology | 2010

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

Deok-Hwang Kwon; Kyung Min Kim; Jae Hyuck Jang; Jong Myeong Jeon; Min Hwan Lee; Gun Hwan Kim; Xiang-Shu Li; Gyeong-Su Park; Bora Lee; Seungwu Han; Miyoung Kim; Cheol Seong Hwang

Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO(2)/Pt system during resistive switching. In situ current-voltage and low-temperature (approximately 130 K) conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications.


Applied Physics Letters | 2014

Role of oxygen vacancies in resistive switching in Pt/Nb-doped SrTiO3

Jinho Park; Deok-Hwang Kwon; Hongwoo Park; Chang Uk Jung; Miyoung Kim

Oxygen vacancies at the metal/oxide interface, driven by an electric field, have been considered responsible for the switching to the low-resistance state. We studied the electrical properties, along with microscopic observations, of the Pt/Nb-doped SrTiO3 (001) single-crystal system. Electron energy loss spectroscopy revealed highly accumulated oxygen vacancies at the interface in the high-resistance state, contrasting to common explanation. Higher resistance state by more oxygen vacancies was further confirmed in Pt/H2-annealed SrTiO3. These results suggest the presence of an interfacial state which dominantly determined the resistivity by changing the barrier height at the interface.


Japanese Journal of Applied Physics | 2010

Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching

Seung Ran Lee; Hoon Min Kim; Jung Hoon Bak; Yun Daniel Park; Kookrin Char; Hong Woo Park; Deok-Hwang Kwon; Miyoung Kim; Dong-Chirl Kim; Sunae Seo; Xiang-Shu Li; Gyeong-Su Park; Ranju Jung

We investigated the resistance switching (RS) phenomenon in epitaxial NiO (epi-NiO) films by employing different types of top electrodes (TEs). Epi-NiO showed successive bipolar RS when Pt and CaRuO3 (CRO) were used as the TEs, but not when Al and Ti were used. We studied the temperature dependence of the current–voltage (I–V) characteristics for various TEs and resistance states to understand the conduction properties of TE/epi-NiO. Pristine CRO/epi-NiO showed metallic behavior, while pristine Pt/epi-NiO and Al/epi-NiO showed insulating behavior. Pt/epi-NiO and Al/epi-NiO, however, switched to a metallic or non-insulating state after electroforming. Transmission electron microscopy (TEM) images revealed the presence of a distinct stable interfacial AlOx layer in pristine Al/epi-NiO. On the other hand, the interfacial metal oxide layer was indistinguishable in the case of pristine Pt/epi-NiO and CRO/epi-NiO. Our experimental results suggested that epi-NiO has an oxygen defect on its surface and therefore the various TE/epi-NiO interfaces characterized in this study adopt distinctive electrical states. Further, the bipolar RS phenomenon can be explained by the voltage-polarity-dependent movement of oxygen ions near the interface.


Reproduction in Domestic Animals | 2010

Effect of roscovitine-treated donor cells on development of porcine cloned embryos.

Hyun-Seok Park; Ok-Jae Koo; Deok-Hwang Kwon; Jung-Taek Kang; Goo Jang; B. C. Lee

Synchronization of the donor cell cycle is an important factor for successful animal cloning by nuclear transfer. To improve the efficiency of porcine cloning, in the present report, we evaluated effects of contact inhibition, serum starvation and roscovitine treatment of donor cells on in vitro and in vivo developmental potency of cloned porcine embryos. Fibroblasts derived from a porcine foetus at day 30 of gestation were isolated and cultured to 70% confluency. Then, cells were either cultured to 100% confluency for contact inhibition, or cultured in 0.5% serum for 72 h for serum starvation or with 15 μM roscovitine for 24 h. Cells were most effectively synchronized at G0/G1 in the serum starvation group (87.5%) compared with the contact inhibition and roscovitine treatment groups (76.3% and 79.9% respectively p < 0.05). However, after somatic cell nuclear transfer followed by in vitro culture, the serum starvation group showed a significantly lower blastocyst formation rate (5.6%) compared with the contact inhibition and roscovitine treatment groups (11.6% and 20.0% respectively). Differential expression of apoptosis-related genes and the level of apoptosis in each treatment group explain the variation in developmental competence among the groups. Significantly higher level of apoptosis was observed in the serum starvation group. On the other hand, the roscovitine treatment group shows the lowest level of apoptosis and the best in vitro development among the groups. Cloned embryos derived from roscovitine-treated donor cells were transferred to surrogate pigs. Three healthy live piglets were produced. In conclusion, we suggest that roscovitine treatment of donor cells improves development of cloned porcine embryos and can raise the efficiency of cloned piglet production.


Reproduction in Domestic Animals | 2009

Influence of Ovulation Status, Seasonality and Embryo Transfer Method on Development of Cloned Porcine Embryos

Ok-Jae Koo; Jung-Taek Kang; Deok-Hwang Kwon; Hyun-Seok Park; Byungjeong Lee

To improve pig cloning efficiency, the present study evaluated the effect of ovulation status, seasonality and embryo transfer (ET) method on in vivo development of cloned porcine embryos. Cloned embryos were transferred to surrogate mothers on the same day of somatic cell nuclear transfer. In pre-ovulation stage (PO), pregnancy rate (PR) and delivery rate (DR) were 36.3% and 9.4%, respectively. In post-ovulation stage, 22.7% PR and 2.1% DR were recorded (both PR and DR are significantly higher in PO). When ET was performed during winter (December-February), spring (March-May), summer (June-August) and autumn (September-November), the PRs were 13.4%, 37.3%, 24.6% and 51.0%, while DRs were 0%, 12.7%, 4.3% and 7.8%, respectively. The highest PRs were recorded in autumn groups. However, DRs were significantly lower in autumn (7.8%) group compared with spring (12.7%) group. The PR was the lowest and no piglets were born in winter group, which might be because of the effect of low temperature during ET. To overcome the low PR in winter group, 0.25 ml straws were used for ET to minimize exposure time of embryos to ambient temperature. The straw ET group showed significantly higher PR in the winter group (23. 9%) compared with the conventional catheter-loading group (7.7%). We suggest that using PO recipient and ET in spring is the best condition for pig cloning. In addition, alternative method to reduce cold shock during ET in winter is necessary.


ACS Applied Materials & Interfaces | 2016

Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.

Susant Kumar Acharya; Raveendra Venkata Nallagatla; Octolia Togibasa; Bo W. Lee; Chunli Liu; Chang U. Jung; Bae Ho Park; Ji-Yong Park; Yunae Cho; Dong-Wook Kim; Janghyun Jo; Deok-Hwang Kwon; Miyoung Kim; Cheol Seong Hwang; Seung Chul Chae

Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters-including set voltage, reset voltage, and resistance-in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film. To achieve this result, we deposited an SrFeOx/SrRuO3 heteroepitaxial structure onto an SrTiO3 (001) substrate by pulsed laser deposition, and then we deposited an Au top electrode by electron-beam evaporation. This device exhibited excellent bipolar resistance switching characteristics, including a high on/off ratio, narrow distribution of key switching parameters, and long data retention time. We interpret these phenomena in terms of a local, reversible phase transformation in the SrFeOx film between brownmillerite and perovskite structures. Using the brownmillerite structure and atomically uniform thickness of the heteroepitaxial SrFeOx thin film, we overcame two major hurdles in the development of resistive random-access memory devices: high forming voltage and broad distributions of switching parameters.


IEEE Electron Device Letters | 2013

Electrically Driven Diffraction Grating Designed for Visible-Wavelength Region

Sun Il Kim; Jun Hee Choi; Chan Wook Baik; Ho Young Ahn; Yun Sung Lee; Jungkwuen An; Chil-Sung Choi; Kyungsuk Pyun; Hong-Seok Lee; Deok-Hwang Kwon; Min-Kwan Kim; Miyoung Kim; Sangyoon Lee

We report on an electrically driven diffraction grating designed for visible light, where the refractive index of a liquid crystal (LC) was modulated periodically at an interval of 700 nm by applying an external dc bias to a metallic nanograting (NG). The LC-NG structure exhibited a maximum refractive index variation (Δn) of 0.088 and a diffraction efficiency (η) change of 0%-16% with a large diffraction angle of 64° for incident light of 633-nm wavelength. This approach, with the help of faster electronics, provides an opportunity of developing active holograms for real 3-D displays.


Npg Asia Materials | 2018

Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS 4 )

Mi Jung Lee; Sangik Lee; Sungmin Lee; Karuppannan Balamurugan; Chansoo Yoon; Sunghoon Kim; Deok-Hwang Kwon; Miyoung Kim; Jae-Pyoung Ahn; Dae Hwan Kim; Je-Geun Park; Bae Ho Park

Two-dimensional (2D) van der Waals (vdW) materials have recently attracted considerable attention due to their excellent electrical and mechanical properties. TmPSx (where Tm = a transition metal), which is a new class of 2D vdW materials, is expected to show various physical phenomena depending on the Tm used. In this paper, the unprecedented synaptic behavior of a vertical Ag/CrPS4/Au capacitor structure, where CrPS4 is a single-crystalline 2D vdW layer, is reported. Multi-stable resistive states were obtained using an external voltage of less than 0.3 V. Both short-term plasticity and long-term potentiation were observed by controlling the interval of the external voltage pulse. Simple mechanical exfoliation was used to develop a synaptic device based on a very thin CrPS4 layer with a thickness of ~17 nm. Therefore, it was demonstrated that vertical Ag/CrPS4/Au capacitors could be promising inorganic synaptic devices compatible with next-generation, flexible neuromorphic technologies.Two-dimensional materials: inorganic device mimics synapseA capacitor made of a chromium thiophosphate (CrPS4) layer sandwiched between a silver electrode and a gold electrode behaves like a synapse. A Korea-based team led by Bae Ho Park from Konkuk University, Seoul, peeled very thin, crystalline CrPS4 layers of different thicknesses from the bulk material and fabricated top and bottom electrodes to prepare a series of Ag/CrPS4/Au capacitors. Under electrical pulses of different amplitudes, durations and intervals, these structures mimicked short-term and long-term variations in synaptic strength—neural behaviors involved in learning and memory. The devices’ behavior is attributed to the electrochemically induced migration of silver ions across the CrPS4 layer, leading to the formation and rupture of a conducting filament between the electrodes. The Ag/CrPS4/Au structure is promising for computing technologies that imitate neural pathways in the nervous system.We suggest synaptic devices using cation migration along thickness direction in a new class of 2D layered materials. An electrochemically active metal, such as Ag and Cu, is used for the operation of the synaptic device and chromium thiophosphate (CrPS4) single crystal is used as an electrolyte material. Multi-stable resistive states, short-term plasticity, and long-term potentiation are observed by controlling external voltage pulse with height smaller than 0.3 V. Given that simple mechanical exfoliation can generate very thin CrPS4 layers, the vertical Ag/CrPS4/Au capacitor offers a promising inorganic synaptic device compatible with next-generation flexible neuromorphic technology.


Reproduction, Fertility and Development | 2008

245 Effects of melatonin on the in vitro oocyte maturation of porcine cumulus-oocyte complexes

J. K. Kang; Ok-Jae Koo; Deok-Hwang Kwon; Goo Jang; S.K. Kang; Dong-Uk Kim; B. C. Lee

In mammalian species, melatonin is a multifunctional hormone that mediates several circadian and seasonal processes, including reproduction. In addition to its hormonal actions, melatonin has a strong antioxidant effect and acts as a powerful free radical scavenger. Accordingly, the objective of this study was to investigate the local expression of the melatonin-receptor I (Mel-RI) gene and the effect of melatonin as an antioxidant on the in vitro maturation of porcine cumulus–oocyte complexes. Oocytes were obtained from aspiration of slaughterhouse ovaries and then matured in tissue culture medium 199 (TCM199) supplemented with 0.1% polyvinyl alcohol (PVA), 20 ng mL–1 epidermal growth factor (EGF), and 4 IU mL–1 pregnant mare serum gonadotropin (PMSG)/hCG. Expression of Mel-RI gene in cumulus cells, granulosa cells, or oocytes was evaluated by RT-PCR (Exp 1). The effect of various concentrations (0, 10, 50, and 100 ng mL–1) of melatonin on the in vitro maturation in terms of nuclear maturation (polar body extrusion) (Exp 2) and measurement of reactive oxygen species (ROS) by dichlorohydrofluorescein diacetate (Yang et al. 1998 Hum. Reprod. 13, 998–1002) (Exp 3) were investigated. Each experiment was replicated at least four times, and each replication included more than thirty oocytes. For statistical analysis, one-way anova in the Prizm software program (GraphPad, San Diego, CA, USA) was used. The Mel-RI gene was locally expressed in cumulus and granulosa cells but not in oocytes. Melatonin at 10 ng mL–1 had a beneficial effect on in vitro maturation (84.6%) compared to 0 ng mL–1 (75.6%), 50 ng mL–1 (80.9%), and 100 ng mL–1 (76.5%). Levels of ROS were also significantly decreased by melatonin treatment at 10 (14.07), 50 (14.42), and 100 ng mL–1 (13.03) of melatonin (P < 0.001) compared to that of the control group (28.21). The presence of melatonin receptor in cumulus cells and granulosa cells indicates a potentially important role for this hormone in regulating porcine ovarian and reproduction function. In conclusion, the present study demonstrated that melatonin had a beneficial effect on in vitro maturation of porcine cumulus–oocyte complexes, probably through binding a receptor and decreased ROS production. Further studies are required to elucidate the relationship between the appearance of melatonin receptor and mechanisms of melatonin function in the embryo.


Microelectronic Engineering | 2013

Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes

Yushi Hu; David Perello; Minhee Yun; Deok-Hwang Kwon; Miyoung Kim

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Miyoung Kim

Seoul National University

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Ok-Jae Koo

Seoul National University

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B. C. Lee

Seoul National University

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Goo Jang

Seoul National University

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Jung-Taek Kang

Seoul National University

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Sol-Ji Park

Seoul National University

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Hyun-Seok Park

Seoul National University

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