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Dive into the research topics where DeXin Wang is active.

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Featured researches published by DeXin Wang.


IEEE Transactions on Magnetics | 2007

Tuning Magnetic Microstructures of Reference Layer in Magnetic Tunneling Junctions

L. Yuan; Y. S. Lin; DeXin Wang; Sy_Hwang Liou

Magnetic microstructures in the reference layer in magnetic tunneling junctions (MTJs) are tuned by a reversal field under ambient conditions to investigate their effects on the magnetoresistance (MR) and the exchange coupling field (HE) between the reference layer and the free layer. Magnetization changes in the reference layer can be probed by measuring minor MR loops. The results show the HE of the minor MR loops versus the applied reversal field changes from negative to positive and crosses zero. These results can be explained by the magnetic inhomogeneities at the interface between anti-ferromagnetic/pinned-ferromagnetic layers, which causes the partial magnetization reversal in the reference layer


IEEE Transactions on Magnetics | 2009

Detection of Continuous Spinwaves Along Magnetic Nanostripes Using Magnetoresistive Devices

Haiwen Xi; DeXin Wang; Xiaobin Wang; Yuankai Zheng; Michael X. Tang

In this study, we have theoretically investigated the scheme to detect continuous spinwaves using magnetoresistive devices. First, the spinwaves along a magnetic nanostripe related to this detection scheme have been characterized using a linearization approach on the Landau-Lifshitz-Gilbert equation. Then, the frequency (wavelength) responses of the magnetoresistive devices have been derived from the giant- or tunneling-magnetoresistive effect. The frequency (wavelength) responses have been compared with those of the conventional detection methods using microstrip lines or coplanar waveguides. Finally, we have qualitatively analyzed the impact of noise in spinwave detection, from which this detection scheme can be improved.


Archive | 2009

ST-RAM Cells with Perpendicular Anisotropy

DeXin Wang; Haiwen Xi; Yuankai Zheng; Dimitar V. Dimitrov


Archive | 2010

Variable write and read methods for resistive random access memory

Haiwen Xi; Hongyue Liu; Xiaobin Wang; Yong Lu; Yiran Chen; Yuankai Zheng; Dimitar V. Dimitrov; DeXin Wang; Hai Li


Archive | 2012

Programmable metallization memory cell with planarized silver electrode

Wei Tian; DeXin Wang; Venugopalan Vaithyanathan; Yang Dong; Muralikrishnan Balakrishnan; Ivan Petrov Ivanov; Ming Sun; Dimitar V. Dimitrov


Physical Review B | 2006

Temperature dependence of magnetoresistance in magnetic tunnel junctions with different free layer structures

L. Yuan; Sy_Hwang Liou; DeXin Wang


Archive | 2006

Spin oscillator device

Dimitar V. Dimitrov; Xilin Peng; Song S. Xue; DeXin Wang


Archive | 2010

Programmable metallization memory cells via selective channel forming

Haiwen Xi; Ming Sun; DeXin Wang; Shuiyuan Huang; Michael Tang; Song S. Xue


Archive | 2012

Magnetic tunnel junction with electronically reflective insulative spacer

Yuankai Zheng; Dimitar V. Dimitrov; Wei Tian; DeXin Wang; Zheng Gao; Xiaobin Wang


Archive | 2011

Non-volatile memory with stray magnetic field compensation

Dimitar V. Dimitrov; Olle Heinonen; DeXin Wang; Haiwen Xi

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