Dhani Nafday
S.N. Bose National Centre for Basic Sciences
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Publication
Featured researches published by Dhani Nafday.
Physica E-low-dimensional Systems & Nanostructures | 2014
Suman Chowdhury; Santu Baidya; Dhani Nafday; Soumyajyoti Halder; Mukul Kabir; Biplab Sanyal; Tanusri Saha-Dasgupta; Debnarayan Jana; Abhijit Mookerjee
Abstract We propose here a first-principles, parameter free, real space method for the study of disordered extended defects in solids. We shall illustrate the power of the technique with an application to graphene sheets with randomly placed Stone–Wales defects and shall examine the signature of such random defects on the density of states as a function of their concentration. The technique is general enough to be applied to a whole class of systems with lattice translational symmetry broken not only locally but by extended defects and defect clusters. The real space approach will allow us to distinguish signatures of specific defects and defect clusters.
Indian Journal of Physics | 2016
Suman Chowdhury; Debnarayan Jana; Banasree Sadhukhan; Dhani Nafday; Santu Baidya; Tanusri Saha-Dasgupta; A. Mookerjee
The main aim of this work is to present two different methodologies for configuration averaging in disordered systems. The Recursion method is suitable for the calculation of spatial or self-averaging, while the augmented space formalism averages over different possible configurations of the system. We have applied these techniques to a simple example and compared their results. Based on these, we have reexamined the concept of spatial ergodicity in disordered systems. The specific aspect, we have focused on, is the question “Why does an experimentalist often obtain the averaged result on a single sample?” We have found that in our example of disordered graphene, the two lead to the same result within the error limits of the two methods.
npj 2D Materials and Applications | 2018
Anindita Sahoo; Dhani Nafday; Tathagata Paul; Roald Ruiter; Arunesh Roy; Maxim Mostovoy; Tamalika Banerjee; Tanusri Saha-Dasgupta; Arindam Ghosh
The out-of-plane electric polarization at the surface of SrTiO3 (STO), an archetypal perovskite oxide, may stabilize new electronic states and/or host novel device functionality. This is particularly significant in proximity to atomically thin membranes, such as graphene, although a quantitative understanding of the polarization across graphene–STO interface remains experimentally elusive. Here, we report direct observation and measurement of a large intrinsic out-of-plane polarization at the interface of single-layer graphene and TiO2-terminated STO (100) crystal. Using a unique temperature dependence of anti-hysteretic gate-transfer characteristics in dual-gated graphene-on-STO field-effect transistors, we estimate the polarization to be as large as ≈12 μC cm−2, which is also supported by the density functional theory calculations and low-frequency noise measurements. The anti-hysteretic transfer characteristics is quantitatively shown to arise from an interplay of band bending at the STO surface and electrostatic potential due to interface polarization, which may be a generic feature in hybrid electronic devices from two-dimensional materials and perovskite oxides.Nanoelectronics: out-of-plane electrical polarization at graphene/SrTiO 3 interfacesThe dipole field at the surface of SrTiO3 strongly impacts the transfer characteristics of graphene/SrTiO3 field-effect transistors. A team led by Arindam Ghosh at the Indian Institute of Science (Bangalore) fabricated dual-gated field-effect transistors with graphene on a TiO2-terminated SrTiO3 (100) crystal, and observed a large, intrinsic out-of-plane electric polarization at the hetero-interface. The measured polarization, detected by means of gate-transfer characteristics and further supported by density functional theory calculations, was found to be as large as 12 μC cm−2. The nature of the anti-hysteretic transfer characteristics in both resistance and noise is indicative of formation of trap states at the SrTiO3 interface, due to band renormalization and electrostatic confinement. These results improve the physical understanding of the interfaces between atomically thin materials and polarizable substrates.
ACS Nano | 2018
Dhani Nafday; Subhrangsu Sarkar; Pushan Ayyub; Tanusri Saha-Dasgupta
From a careful analysis of existing data as well as new measurements, we show that the size dependence of the lattice parameters in metal nanoparticles with face-centered cubic (fcc) and body-centered cubic (bcc) symmetries display opposite trends: nanoparticles with fcc structure generally contract with decreasing particle size, while those with bcc structure expand. We present a microscopic explanation for this apparently puzzling behavior based on first-principles simulations. Our results, obtained from a comparison of density functional theory calculations with experimental data, indicate that the nanoparticles are capped by a surface monolayer of oxygen atoms, which is routinely detected by surface-sensitive techniques. The bcc- and fcc-based nanoparticles respond in contrasting fashion to the presence of the oxygen capping layer, and this dictates whether the corresponding lattice parameter would increase or decrease with size reduction. The metal-oxygen bonds at the surface, being shorter and stronger than typical metal-metal bonds, pull the surface metal atoms outward. This outward movement of surface atoms influences the core regions to a larger extent in the relatively open bcc geometry, producing a rather large overall expansion of the cluster, compared to the bulk. In case of fcc clusters, on the other hand, the outward movement of surface metal atoms does not percolate too far inside, resulting in either a smaller net expansion or contraction of the cluster depending on the extent of surface oxygen coverage. Our study therefore provides a convincing physicochemical basis for the correlation between the underlying geometry and the nature of change of the lattice parameters under size reduction.
Physical Review B | 2013
Dhani Nafday; Tanusri Saha-Dasgupta
Physical Review B | 2016
Dhani Nafday; Mukul Kabir; Tanusri Saha-Dasgupta
Physical Review B | 2017
Poulami Chakraborty; Tilak Das; Dhani Nafday; Lilia Boeri; Tanusri Saha-Dasgupta
Physical Review B | 2017
Pallavi Paul; Poulami Chakraborty; Tilak Das; Dhani Nafday; Tanusri Saha-Dasgupta
arXiv: Materials Science | 2015
Suman Chowdhury; Banasree Sadhukhan; Dhani Nafday; Santu Baidya; Debnarayan Jana; Tanusri Saha-Dasgupta; Abhijit Mookerjee
Physical Review B | 2014
Sajeev Chacko; Dhani Nafday; D. G. Kanhere; Tanusri Saha-Dasgupta