Didier Regis

Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation

Abstract This paper investigates the impact of terrestrial radiation on soft error (SE) sensitivity along the very large-scale integration (VLSI) roadmap of bulk, FDSOI and finFET nano-scale technologies using the MUSCA SEP3 tool. The terrestrial radiation considered in this work includes neutron, proton, and muon particles and alpha-emitters. The results indicate that protons and muons must be taken into account for ground environments. However, significant differences were observed for bulk, FDSOI and FinFET technologies. The downscaling induces an increase in SEU susceptibility to radiation. An overall analysis indicates that the SER does not increase drastically with technological integration for the three technologies considered. Moreover, the results show that FDSOI and FinFET technologies provide resistance to the ionizing radiation effects due to narrow sensitivity volumes. At the ground altitudes, the total SER ranges from 10 3 and 10 4 FIT/Mbit for the planar bulk technology while it ranges from 10 2 and 10 3 FIT/Mbit for the FDSOI and FinFET technologies. The results of analyses show that for the avionic altitude, neutron and/or the proton environments induce the main contribution to the total SER, whereas muon and α-SER impacts are negligible. For the 45-nm technological node (all types), the neutron contribution is around 60–70% of the total SER. Concerning the ground altitude, α-SER is the main contribution down to the 28-nm node. Moreover, the results suggest muon-induced upset affects the soft error rate from 32-nm SRAM operated at a nominal supply voltage and has a significant impact for circuits fabricated in smaller process technologies (22-nm and 14-nm). In addition, the results show that the muon impact can be the main contribution at 22-nm and beyond. Future terrestrial error rate predictions will require characterizations of the linear energy transfer (LET) threshold with consideration of muon and/or proton environments.

Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies

Abstract This paper evaluates the impact of aging on the radiation sensitivity of 6T SRAM for two planar bulk technologies. This study is motivated by the growing impact of aging and radiation effects on the reliability of CMOS technology. A modelling methodology dedicated to this new phenomenon is proposed. This modelling uses the radiation modelling device MUSCA SEP3 and an electrical aging modelling. First, the impact of aging on SEE sensitivity is studied through a parametric modeling of the threshold voltages of the transistors composing the 6T SRAM. Then, an operative avionics environment is modelled in order to evaluate the consequences on reliability.

Use of Electro-Magnetic Analysis to monitor activity of a digital circuit in a non-intrusive way

In this paper we introduce a fully non intrusive test method which is based on the Differential Electro-Magnetic Analysis (EMA). Our objective is to demonstrate the capability of this new method to detect a modification in a circuit, like a fault voluntary injected would be. This detection is carried out by comparing a reference trace, called Reference Signature, with a differential trace representing the observed electro-magnetic activity, called Control Signature. The results show the efficiency of the proposed method. We will then introduce the possibility offered by EM measurement to be used to detect a degradation of physical parameters on Avionics equipments where no intrusion is allowed.

Non intrusive fault detection through electromagnetism analysis

In this paper we introduce a fully non intrusive test method which is based on the Differential Electro-Magnetic Analysis (EMA). Our objective is to demonstrate the capability of this new method to detect stuck-at-0 faults voluntary injected in a full-custom circuit. This detection is carried out by comparing a reference trace, called Reference Signature, with a differential trace representing the observed electromagnetic activity. The results show the efficiency of the proposed method. We will then introduce the possibility offered by EM measurement to be used to detect degradation of physical parameters on equipments where no intrusions are allowed.