Dipankar Banerjee

Processing, Structure, Texture and Microtexture in Titanium Alloys

We review the effect of processing on structure and texture in titanium alloys, focusing on the understanding of this relationship that has evolved over the last decade. Thermomechanical processing cycles for these alloys involve deformation and heat treatment in single phase β and two phase, α+β, phase fields, and involves a complex interplay between deformation and recrystallization textures of the individual phases, textures arising from the crystallographic relationship between the two phases, and the scale of microstructure evolution. We explore these interactions and trace the strong dependence of thermomechanical pathways on the final structure and texture.

Quantitative strain and compositional studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT device structure by TEM techniques.

In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the In x Ga1-x As channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the In x Ga1-x As layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the In x Ga1-x As channel layer was pseudomorphically grown leading to tetragonal strain along the [001] growth direction and that the average indium content (x) in the epilayer is ~0.12. We found consistency in the results obtained using various methods of analysis.