Do-youb Kim
Samsung
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Publication
Featured researches published by Do-youb Kim.
international solid-state circuits conference | 2007
Yong-sung Park; Do-youb Kim; Keum-Nam Kim; Yojiro Matsueda; Jong-Hyun Choi; Chul-Kyu Kang; Hye-Dong Kim; Ho Kyoon Chung; Oh-Kyong Kwon
An 8b source driver for 2.0 inch QVGA active-matrix OLEDs is fabricated using LTPS TFTs. This driver uses an 8b DAC that is separated into two parts, a 1-to-3 DEMUX, and a pre-charge method. This scheme reduces the source driver size by 40%. The maximum DNL is under 1LSB. The output voltage variation of the source driver is less than 1 LSB even though the variation of the threshold voltage is plusmn0.5V
international solid-state circuits conference | 2003
Jae-Yoon Sim; Kee-Won Kwon; Jung-Hyun Choi; Sung-Yeon Lee; Do-youb Kim; Hyong-Ryol Hwang; Ki Chul Chun; Youngil Seo; Hong-Sun Hwang; Dongjoo Seo; Chun-Sup Kim; Sungwee Cho
A 1.0 V, 256 Mb SDRAM is designed in a 0.1 /spl mu/m CMOS technology. For low voltage applications, an offset compensated direct current sensing scheme improves refresh time as well as sensing performance. A charge-recycled precharge reuses the word-line discharge current to generate the boosted voltage required for equalization without charge pumping. At 1.0 V, the access time is 25 ns and the current is 15 mA.
Archive | 2010
Won-Kyu Kwak; Do-youb Kim
Archive | 2010
Deok-Young Choi; Yong-sung Park; Do-youb Kim; Soon-Sung Ahn; In-Ho Choi
Archive | 2009
Soon-Sung Ahn; Yong-sung Park; Do-youb Kim; Deok-Young Choi; In-Ho Choi
Archive | 2009
Deok-Young Choi; Yong-sung Park; Do-youb Kim; Soon-Sung Ahn; In-Ho Choi
Archive | 2011
Do-youb Kim; Yong-sung Park; Deok-Young Choi; Soon-Sung Ahn; In-Ho Choi; Tae-Jin Kim; Joo-Hyeton Jeong; Brent Jang; Ki-Ju Kim
Archive | 2010
Brent Jang; Ja-Seung Ku; Do-youb Kim; Soon-Sung Ahn
Archive | 2010
Woo-sik Jun; Do-youb Kim; Ung-Soo Lee
Archive | 2008
Do-youb Kim; Su-Young Kim; Eun-Jung Lee; Dong-Wook Choi