Dominique Tournier

A Digital-Controller Parameter-Tuning Approach, Application to a Switch-Mode Power Supply

Analogue control of monolithic DC/DC converters is technologically coming to a limit due to high switching frequency and a request for large regulation bandwidth. Digital control is now experimented for low-power low-voltage switch-mode power supply. Digital implementation of analogue solutions does not prove real performances. This paper compares a classical digital controller to a candidate alternative strategy. Sensitivity functions are used to compare controller performances. An off-line approach using fuzzy logic to quantify controller performances and a genetic algorithm to obtain an optimal controller is presented. A so-called RST algorithm optimized with this approach shows better performances.

SiC Integrated Circuit Control Electronics for High-Temperature Operation

This paper is an important step toward the development of complex integrated circuit (IC) control electronics that have to attend to high-temperature environment power applications. We present in premiere a prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip. Also, we report for the first time the functionality of standard Si-CMOS topologies on SiC for the master-slave data flip-flop (FF) and data-reset FF digital building blocks designed with MESFETs. Concretely, we present the complete development of SiC-MESFET IC circuitry, able to integrate gate drivers for SiC power devices. This development is based on the mature and stable Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal

In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed on the same 4H-SiC wafer. A bi-layer Ni/Ti scheme for the contact metallisation submitted to high temperature rapid thermal anneals is proved to form good ohmic contact on p+ implanted areas while maintaining good Schottky characteristics on lightly doped n-type regions. I-V characteristics have been evaluated from room temperature up to 560K. At room temperature, Schottky diodes have slightly better specific onresistance, but when working temperature is increased, the JBS diode exhibits better characteristics due to the temperature dependent activation of bipolar current injection from the p+ grid. From reverse measurements, the JBS diodes showed lower leakage current and higher breakdown voltages in comparison to that of the Schottky diodes in the whole range of temperatures.

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption.

SiC power semiconductor devices for new applications in power electronics

This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.

Process Optimisation for 4H-SiC MOSFET Applications

We report on 4H-SiC MOSFET devices implemented on p-type <11-20>-oriented epitaxial layers, using a two-step procedure for gate oxide formation. First is a thin, dry, thermal SiO2 layer grown at 1050°C for 1 hour. Next, is a thick (50 nm) layer of complementary oxide deposited by PECVD using TEOS as gas precursor. With respect to the standard thermal oxidation process, this results in much improvement of the field effect mobility. For the best samples, we find a peak value in the range of 330 cm2/Vs while, on the full wafer, an average mobility of about 160 cm2/Vs is found. Up to now, this is one of the best results ever reported for 4H-SiC MOSFETs.

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Integration of Power devices with their control circuitry is a usual challenge in Si and SiC technologies to increase efficiency of power switch and systems. The purpose of this article is to evaluate the integration compatibility of lateral MESFETs within a Vertical power JFET fabrication technology. The interest of this method is to allow control circuitry based on MESFET devices to get both power devices and control circuits on the same die. Several possibilities can be foreseen for the realization of lateral SiC-MESFETs [1], using conductive substrates or semi-insulating wafers. Other possibilities, more compatible with a vertical power device process, are P and N well formation by ion implantation to form the lateral channel. The description of the fabrication process presented below is a part of the fabrication process of a VJFET designed for high voltage current limitation [2]. High energy implantation, RIE etching adjustment and metal contact annealing are the critical steps of the fabrication of this device and will be developed in the process description. Electrical characterization of fabricated MESFET exhibit specific on resistance of 38mΩ.cm² and a transconductance value of 0,4 mS.mm-1. These results demonstrate VJFET and MESFET fabrication technology compatibility. Keys points to improve for the next generation of devices will be presented as well.

Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

Lateral normally-on dual gates MESFETs withstanding a drain/source voltage in excess of 200V have been fabricated on semi-insulating 4H-SiC substrate. This paper reports on the fabrication, DC characterization and in-circuit behavior of the MESFETs. Temperature dependent DC characterization has been carried out up to 473K. The performances of basic analog circuits such as an amplifier and a clock, using these MESFETs, are detailed and analyzed.

Buried Selective Growth of p-Doped SiC by VLS Epitaxy

Selective epitaxial growth in buried patterns was studied using the vapour-liquid-solid mechanism in Al-Si melt in order to obtain p+-doped SiC localized layers on 4H-SiC substrate. Homogeneous deposition with step bunched morphology was obtained by adding propane at room temperature before growth at 1100°C. Patterns as large as 800 µm and as narrow as 10 µm were completely filled in this way. The deposition kinetics demonstrates that the process is self limited and mainly depends on the initial amount of Si in the liquid. The deposit is highly p-type doped and the p-n junction is demonstrated.

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with lowly doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.