Dong-Ryul Lee

Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layers

Photoluminescence (PL) from InAs self-assembled quantum dots (QD) embedded in the AlAs matrix was strong and clean around 700 nm. PL efficiency remained quite high at room temperature compared to other QD systems embedded in GaAs cladding layers. Transmission electron microscope pictures from the structure showed a clear formation of relatively small and coherently strained InAs QD. The observed blueshift with accompanying broadening of PL spectra with the increase of excitation power is interpreted in terms of local carrier tunneling in a dense QD system. The PL peak redshift with the increase of temperature was very large, as much as 228 meV. The anomalous shift is interpreted as due to activation-energy differences between dots of different sizes.

Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature

Continuous-wave operation at room temperature from InGaAs∕InGaAsP∕InP quantum dot (QD) laser diodes (LD) has been achieved. A ridge waveguide QD LD with 7 QD-stacks in the active region lases at 1.503μm at 20°C and that with 5 QD-stacks lases at 1.445μm at room temperature. The shift in lasing wavelength is believed to be due to the difference in the quantized energy states involved in producing gain for lasing. With smaller number of QD stacks and shorter cavity length, the lasing wavelength shifts to shorter wavelength indicating that more of higher excited states are involved in producing gain. By increasing the number of QD stacks to 15, lasing at 1.56μm has been achieved under pulsed mode.

Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

Carrier lifetimes have been measured for long-wavelength emitting InAs quantum dots (QDs) capped with a thin GaAsSb layer. Above a critical Sb composition, a type-II system is formed, resulting in an increase in the carrier lifetime. The carrier lifetime in a strongly type-II structure is increased by a factor ∼54 in comparison to the lifetime in a type-I structure. In addition, the type-II carrier lifetime varies across the inhomogeneously broadened ground-state emission, while the type-I QD lifetime is invariant.

Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer

Ground-state energy of InAs quantum dots (QDs) in the GaAs matrix can be changed significantly by introducing a thin AlAs layer (1 nm). The photoluminescence (PL) peak position of the QDs grown directly on the thin AlAs layer is blueshifted by 171 meV from that of the QDs grown without the AlAs layer. QDs grown on an additional GaAs thin layer on top of the AlAs layer have PL peaks systematically redshifted to lower energy as the GaAs layer becomes thicker. Time-resolved PL shows that the QDs have similar lifetimes, attesting to the fact that all the QDs grown in this way are of high quality, although the energy level change is large and a thin AlAs layer is introduced.

High-speed wavelength conversion in quantum dot and quantum well semiconductor optical amplifiers

We experimentally investigate wavelength conversion in quantum dot and quantum well optical amplifiers via four-wave mixing. Our results show superior conversion efficiency in a quantum dot device compared to a quantum well device with identical gain. Furthermore, a small-signal modulation bandwidth >25GHz was measured with greater than 100% efficiency. Cross talk between two simultaneously input beams was found to be 20dB below the signal power demonstrating the possibility for high-speed, multichannel performance. Cross-gain modulation measurements were performed as well and show a much smaller bandwidth of 1GHz indicating that four-wave mixing is superior for high-speed signals.

Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots

The photoluminescence efficiency and carrier recombination time of p-type modulation doped InAs/GaAs quantum dots (QDs) have been measured as a function of doping density. At 10 K the carrier lifetime decreases from 1200 to 350 ps over the doping range of 0 and 30 acceptors/QD. This behavior is attributed to an enhancement of the Auger-type recombination due to the presence of extrinsic holes in the QDs. The hole density dependence of the Auger process is found to be weaker than in bulk semiconductors and quantum wells (QWs).

Effects of Climate Change on the Streamflow for the Daechung Dam Watershed

Climate change mainly due to the increase of green house gases cause different patterns of water cycle within the basin. However, it is common that current planning and management practices do not consider the effect of the climate change. So, this study evaluated the effect of climate change on the water circulation within the watershed. This study used several GCM simulations for the double condition for the generation of temperature and rainfall series using the Markov chain. Daily runoff series for 100 years were generated using a rainfall-runoff model. As results. annual temperature increase by ＋3.2 ∼＋4.6, annual precipitation change －7 ∼ ＋8 %, annual runoff change －14 ∼ ＋7 %, and potential evapotranspiration amount change ＋3 ∼＋4 % for the change of 1 are found to be expected depending on GCM simulations. Even though the simulation results are very dependent on the GCM predictions considered, overall variability of runoff is expected to become higher than the current state.

Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots

Modulation-doped InAs/GaAs quantum dots (QDs) show bright photoluminescence (PL) at 300 K, linear increase of PL intensity on excitation at 300 K and rather temperature insensitive PL intensity and carrier lifetime, in contrast to undoped QDs. Systematic analyses indicate that those advantageous behaviors come from the enhanced Coulomb attraction due to excess carriers in doped QDs. The stronger Coulomb interaction increases the thermal activation energy, keeps more carriers in QDs, and provides enhanced QD characteristics at room temperature.

Effects of dams and water use on flow regime alteration of the Geum River Basin.

This study presents the alteration of flow regime by effects of dams and water use in the Geum River Basin. The surface water use rate and the Impounded Runoff (IR) index were examined to assess the pressure indicators of the flow alteration. We applied the flow duration curve, flow regime coefficient, flood and low-flow frequency analysis as well as Range of Variability Approach (RVA) to investigate the quantitative changes in natural flow regimes. The results indicate that the high flow decreased and low flow increased respectively compared to the natural flow regimes at eight gauging stations. The Geum river is regulated by 139 dams and reservoirs storing 24% of the annual mean discharge and has high surface water use rate of 36%. These indicators are main pressure factors to alter flow regimes.

Indicators for Evaluation of Sustainable Water Resources Development and Management

A concept of sustainable development has become a major concern in international debate on water resources development and environmental conservation. Although sustainable water resources development and management takes a significant amount of concern in the development research, its applicability has not been insufficient in practices. The purpose of this study is to address a definition of sustainable water resources development and management and to illustrate relevant indicators. The study has also attempted to develop localized indicators hence to assess an availability of water resources development and management and to evaluate the water resources in Korea with the indicators which have been developed in other countries.