Dong-Wook Kim

Holographic inscription of helical wavefronts in a liquid crystal polarization grating

A space-varying polarization hologram (PH) grating is fabricated in a nematic liquid crystal (LC) cell with azo-side-chain polymer alignment layers. The polarization-sensitive photoisomerization property of azo-side-chain polymer is utilized to inscribe the PH in a LC cell. Both transmission and reflection holographic configurations are adopted in fabrication. The transmission PH made by the circular orthogonal polarizations exhibits the polarization-controlled Laguerre-Gaussian beam generation, while the reflection PH made by the linear orthogonal polarizations generates a variety of Laguerre-Gaussian beam, though not polarization controlled.

Degradation pattern of SnO2 nanowire field effect transistors

The degradation pattern of SnO(2) nanowire field effect transistors (FETs) was investigated by using an individual SnO(2) nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al(2)O(3) layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R(s)-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.

Degradation pattern of SnO 2 nanowire field effect transistors

The degradation pattern of SnO(2) nanowire field effect transistors (FETs) was investigated by using an individual SnO(2) nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al(2)O(3) layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R(s)-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.

Correct Depth Analysis on the Stereoscopy

In stereoscopy, the image distance by the focused object distance at camera model makes a different disparity compared to the original at pin-hole model and it will be one of the causes of depth distortion.

Degradation pattern of SnO2nanowire field effect transistors

The degradation pattern of SnO(2) nanowire field effect transistors (FETs) was investigated by using an individual SnO(2) nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al(2)O(3) layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R(s)-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.

Monocular Depth Cue in MF 3-D Display

Experimental results of the monocular MF 3-D display show clear monocular focus on four different depths. Therefore, we can apply the MF 3-D display to monocular 3-D displays.