Dongfei Wang

Room-Temperature, Low-Barrier Boron Doping of Graphene.

Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B2H6. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.

Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

Evidence for Majorana bound states in an iron-based superconductor

An iron home for Majoranas The surface of the iron-based superconductor FeTe0.55Se0.45 has been identified as a potential topological superconductor and is expected to host exotic quasiparticles called the Majorana bound states (MBSs). Wang et al. looked for signatures of MBSs in this material by using scanning tunneling spectroscopy on the vortex cores formed by the application of a magnetic field. In addition to conventional states, they observed the characteristic zero-bias peaks associated with MBSs and were able to distinguish between the two, owing to the favorable ratios of energy scales in the system. Science, this issue p. 333 Scanning tunneling spectroscopy reveals signatures of Majorana bound states on the surface of FeTe1−xSex. The search for Majorana bound states (MBSs) has been fueled by the prospect of using their non-Abelian statistics for robust quantum computation. Two-dimensional superconducting topological materials have been predicted to host MBSs as zero-energy modes in vortex cores. By using scanning tunneling spectroscopy on the superconducting Dirac surface state of the iron-based superconductor FeTe0.55Se0.45, we observed a sharp zero-bias peak inside a vortex core that does not split when moving away from the vortex center. The evolution of the peak under varying magnetic field, temperature, and tunneling barrier is consistent with the tunneling to a nearly pure MBS, separated from nontopological bound states. This observation offers a potential platform for realizing and manipulating MBSs at a relatively high temperature.

Evidence for Ultralow-Energy Vibrations in Large Organic Molecules

The quantum efficiency or the rate of conversion of incident photon to free electron in photosynthesis is known to be extremely high. It has long been thought that the origin of this efficiency are molecular vibrations leading to a very fast separation of electrons and holes within the involved molecules. However, molecular vibrations are commonly in the range above 100 meV, which is too high for excitations in an ambient environment. Here, we analyze experimental spectra of single organic molecules on metal surfaces at ∼4 K, which often exhibit a pronounced dip. We show that measurements on iron(II) [tetra-(pentafluorophenyl)]porphyrin resolve this single dip at 4 K into a series of step-shaped inelastic excitations at 0.4 K. Via extensive spectral maps under applied magnetic fields and corresponding theoretical analysis we find that the dip is due to ultralow-energy vibrations of the molecular frame, typically in the range below 20 meV. The result indicates that ultralow energy vibrations in organic molecules are much more common than currently thought and may be all-pervasive for molecules above a certain size.

Synthesis of atomic layers of hybridized h-BNC by depositing h-BN on graphene via ion beam sputtering

We report the deposition of hexagonal boron nitride (h-BN) on graphene by ion beam sputtering deposition. Both graphene domains and films synthesized by chemical vapor deposition were used as substrates. In the case of graphene domains, it was found that the h-BN domains were preferentially grown on the baked Cu surface instead of graphene due to the highly catalytic activity of Cu. On the other hand, the higher ejection energy of sputtered particles leads to the mixing of boron/nitrogen atoms and carbon atoms. Consequently, the h-BNC films consisting of the hybrid atomic layers of h-BN and graphene domains were formed when the graphene films were used as substrates. This work provides a promising and accessible route for the synthesis of hybridized h-BNC material.

Edge states of graphene wrinkles in single-layer graphene grown on Ni(111)

As quasi-one-dimensional (1D) structures with characteristic widths of nanometer scale, graphene wrinkles (GWs) have been widely observed in graphene grown by chemical vapor deposition. Similar to conventional 1D graphene-based nanostructures, e.g., carbon nanotubes and graphene nanoribbons, 1D electron confinement has been observed in the GWs. However, it remains an open question whether the GWs have effective edges and exhibit corresponding edge states. Here, we report on the edge states of the GWs in single-layer graphene grown on Ni(111) by means of low temperature scanning tunneling microscopy and spectroscopy. We show that the GWs are decoupled from the substrate, while the surrounding planar graphene are strongly coupled with the substrate. The different graphene-substrate coupling leads to effective edges and 1D character of the GWs. The chiral edges of the GWs give rise to pronounced edge states around the Fermi level in the density of states.

Bandgap broadening at grain boundaries in single-layer MoS 2

Two-dimensional semiconducting transition-metal dichalcogenides have attracted considerable interest owing to their unique physical properties and future device applications. In particular, grain boundaries (GBs) have been often observed in single-layer MoS2 grown via chemical vapor deposition, which can significantly influence the material properties. In this study, we examined the electronic structures of various GBs in single-layer MoS2 grown on highly oriented pyrolytic graphite using low-temperature scanning tunneling microscopy/spectroscopy. By measuring the local density of states of a series of GBs with tilt angles ranging from 0° to 25°, we found that the bandgaps at the GBs can be either broadened or narrowed with respect to the intrinsic single-layer MoS2. The bandgap broadening shows that the GBs can become more insulating, which may directly influence the transport properties of nanodevices based on polycrystalline single-layer MoS2 and be useful for optoelectronics.

Construction of bilayer PdSe 2 on epitaxial graphene

Two-dimensional (2D) materials have received significant attention due to their unique physical properties and potential applications in electronics and optoelectronics. Recent studies have demonstrated that exfoliated PdSe2, a layered transition metal dichalcogenide (TMD), exhibits ambipolar field-effect transistor (FET) behavior with notable performance and good air stability, and thus serves as an emerging candidate for 2D electronics. Here, we report the growth of bilayer PdSe2 on a graphene-SiC(0001) substrate by molecular beam epitaxy (MBE). A bandgap of 1.15 ± 0.07 eV was revealed by scanning tunneling spectroscopy (STS). Moreover, a bandgap shift of 0.2 eV was observed in PdSe2 layers grown on monolayer graphene as compared to those grown on bilayer graphene. The realization of nanoscale electronic junctions with atomically sharp boundaries in 2D PdSe2 implies the possibility of tuning its electronic or optoelectronic properties. In addition, on top of the PdSe2 bilayers, PdSe2 nanoribbons and stacks of nanoribbons with a fixed orientation have been fabricated. The bottom-up fabrication of low-dimensional PdSe2 structures is expected to enable substantial exploration of its potential applications.

Recovery of edge states of graphene nanoislands on an iridium substrate by silicon intercalation

Finite-sized graphene sheets, such as graphene nanoislands (GNIs), are promising candidates for practical applications in graphene-based nanoelectronics. GNIs with well-defined zigzag edges are predicted to have spin-polarized edge-states similar to those of zigzag-edged graphene nanoribbons, which can achieve graphene spintronics. However, it has been reported that GNIs on metal substrates have no edge states because of interactions with the substrate.We used a combination of scanning tunneling microscopy, spectroscopy, and density functional theory calculations to demonstrate that the edge states of GNIs on an Ir substrate can be recovered by intercalating a layer of Si atoms between the GNIs and the substrate. We also found that the edge states gradually shift to the Fermi level with increasing island size. This work provides a method to investigate spin-polarized edge states in high-quality graphene nanostructures on a metal substrate.