Donghwan Lim | Researchain

Archive Network Publication Hotspot Collaboration

Network

Latest external collaboration on country level. Dive into details by clicking on the dots.

Explore More

Hotspot

Dive into the research topics where Donghwan Lim is active.

Explore More

Publication

Featured researches published by Donghwan Lim.

Science of Advanced Materials | 2016

Low Gate Leakage Current and Interface State Density of Atomic Layer Deposition Al2O3 SiC MOS Device with NH3 Plasma Treatment

Seung Chan Heo; Woo Suk Jung; Donghwan Lim; Gwangwe Yoo; Jin-Hong Park; Chang Hwan Choi

This work was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2015M3A7B7045496) as well as the Human Resources Development program grant (No. 20144030200580) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Korean government Ministry of Trade, Industry and Energy.

Microelectronic Engineering | 2015

Remote plasma atomic layer deposited Al 2 O 3 4H SiC MOS capacitor with remote H 2 plasma passivation and post metallization annealing

Seung Chan Heo; Donghwan Lim; Woo Suk Jung; Rino Choi; Hyun Yong Yu; Changhwan Choi

Microelectronic Engineering | 2015

The effects of (NH4)2Sx treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack

Donghwan Lim; Woo Suk Jung; Moon Suk Choi; Youngin Gil; Changhwan Choi

Applied Surface Science | 2018

Influence of oxygen vacancies in ALD HfO 2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO 2-x /Pt structure

Andrey Sergeevich Sokolov; Yu-Rim Jeon; Sohyeon Kim; Boncheol Ku; Donghwan Lim; Hoonhee Han; Myeong Gyoon Chae; Jaeho Lee; Beom Gil Ha; Changhwan Choi

Journal of the American Ceramic Society | 2017

Comparative study of Al2O3, HfO2, and HfAlOx for improved self-compliance bipolar resistive switching

Andrey Sergeevich Sokolov; Seok Ki Son; Donghwan Lim; Hoon Hee Han; Yu-Rim Jeon; Jaeho Lee; Changhwan Choi

Applied Surface Science | 2018

Chemical bath deposited ZnS buffer layer for Cu(In,Ga)Se2 thin film solar cell

Jiyeon Hong; Donghwan Lim; Young-Joo Eo; Changhwan Choi

Microelectronic Engineering | 2015

Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics

Donghwan Lim; Woo Suk Jung; Young Jin Kim; Changhwan Choi

Microelectronic Engineering | 2017

The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor

Young Jin Kim; Donghwan Lim; Hoon Hee Han; Andrey Sokolov Sergeevich; Yu-Rim Jeon; Jae Ho Lee; Seok Ki Son; Changhwan Choi

Microelectronic Engineering | 2017

Suppressed charge trapping characteristics of (NH4)2Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric

Hoon Hee Han; Donghwan Lim; Andrey Sokolov Sergeevich; Yu-Rim Jeon; Jaeho Lee; Seok Ki Son; Changhwan Choi

Science of Advanced Materials | 2016

Synthesis of P-Type ZnO Thin Films with Arsenic Doping and Post Annealing

Chulwon Chung; Young-Jin Kim; Hoon Hee Han; Donghwan Lim; Woo Suk Jung; Moon Suk Choi; Hyo-Jik Nam; Seok-Ki Son; Andrey Sokolov Sergeevich; Jin-Hong Park; Chang Hwan Choi

Explore More