Donghyuk Lee

Flipping bits in memory without accessing them: an experimental study of DRAM disturbance errors

Memory isolation is a key property of a reliable and secure computing system-an access to one memory address should not have unintended side effects on data stored in other addresses. However, as DRAM process technology scales down to smaller dimensions, it becomes more difficult to prevent DRAM cells from electrically interacting with each other. In this paper, we expose the vulnerability of commodity DRAM chips to disturbance errors. By reading from the same address in DRAM, we show that it is possible to corrupt data in nearby addresses. More specifically, activating the same row in DRAM corrupts data in nearby rows. We demonstrate this phenomenon on Intel and AMD systems using a malicious program that generates many DRAM accesses. We induce errors in most DRAM modules (110 out of 129) from three major DRAM manufacturers. From this we conclude that many deployed systems are likely to be at risk. We identify the root cause of disturbance errors as the repeated toggling of a DRAM rows wordline, which stresses inter-cell coupling effects that accelerate charge leakage from nearby rows. We provide an extensive characterization study of disturbance errors and their behavior using an FPGA-based testing platform. Among our key findings, we show that (i) it takes as few as 139K accesses to induce an error and (ii) up to one in every 1.7K cells is susceptible to errors. After examining various potential ways of addressing the problem, we propose a low-overhead solution to prevent the errors.

Tiered-latency DRAM: A low latency and low cost DRAM architecture

The capacity and cost-per-bit of DRAM have historically scaled to satisfy the needs of increasingly large and complex computer systems. However, DRAM latency has remained almost constant, making memory latency the performance bottleneck in todays systems. We observe that the high access latency is not intrinsic to DRAM, but a trade-off made to decrease cost-per-bit. To mitigate the high area overhead of DRAM sensing structures, commodity DRAMs connect many DRAM cells to each sense-amplifier through a wire called a bitline. These bitlines have a high parasitic capacitance due to their long length, and this bitline capacitance is the dominant source of DRAM latency. Specialized low-latency DRAMs use shorter bitlines with fewer cells, but have a higher cost-per-bit due to greater sense-amplifier area overhead. In this work, we introduce Tiered-Latency DRAM (TL-DRAM), which achieves both low latency and low cost-per-bit. In TL-DRAM, each long bitline is split into two shorter segments by an isolation transistor, allowing one segment to be accessed with the latency of a short-bitline DRAM without incurring high cost-per-bit. We propose mechanisms that use the low-latency segment as a hardware-managed or software-managed cache. Evaluations show that our proposed mechanisms improve both performance and energy-efficiency for both single-core and multi-programmed workloads.

A case for exploiting subarray-level parallelism (SALP) in DRAM

Modern DRAMs have multiple banks to serve multiple memory requests in parallel. However, when two requests go to the same bank, they have to be served serially, exacerbating the high latency of off-chip memory. Adding more banks to the system to mitigate this problem incurs high system cost. Our goal in this work is to achieve the benefits of increasing the number of banks with a low cost approach. To this end, we propose three new mechanisms that overlap the latencies of different requests that go to the same bank. The key observation exploited by our mechanisms is that a modern DRAM bank is implemented as a collection of subarrays that operate largely independently while sharing few global peripheral structures. Our proposed mechanisms (SALP-1, SALP-2, and MASA) mitigate the negative impact of bank serialization by overlapping different components of the bank access latencies of multiple requests that go to different subarrays within the same bank. SALP-1 requires no changes to the existing DRAM structure and only needs reinterpretation of some DRAM timing parameters. SALP-2 and MASA require only modest changes (<;0.15% area overhead) to the DRAM peripheral structures, which are much less design constrained than the DRAM core. Evaluations show that all our schemes significantly improve performance for both single-core systems and multi-core systems. Our schemes also interact positively with application-aware memory request scheduling in multi-core systems.

RowClone: fast and energy-efficient in-DRAM bulk data copy and initialization

Several system-level operations trigger bulk data copy or initialization. Even though these bulk data operations do not require any computation, current systems transfer a large quantity of data back and forth on the memory channel to perform such operations. As a result, bulk data operations consume high latency, bandwidth, and energy — degrading both system performance and energy efficiency. In this work, we propose RowClone, a new and simple mechanism to perform bulk copy and initialization completely within DRAM — eliminating the need to transfer any data over the memory channel to perform such operations. Our key observation is that DRAM can internally and efficiently transfer a large quantity of data (multiple KBs) between a row of DRAM cells and the associated row buffer. Based on this, our primary mechanism can quickly copy an entire row of data from a source row to a destination row by first copying the data from the source row to the row buffer and then from the row buffer to the destination row, via two back-to-back activate commands. This mechanism, which we call the Fast Parallel Mode of RowClone, reduces the latency and energy consumption of a 4KB bulk copy operation by 11.6× and 74.4×, respectively, and a 4KB bulk zeroing operation by 6.0× and 41.5×, respectively. To efficiently copy data between rows that do not share a row buffer, we propose a second mode of RowClone, the Pipelined Serial Mode, which uses the shared internal bus of a DRAM chip to quickly copy data between two banks. RowClone requires only a 0.01% increase in DRAM chip area. We quantitatively evaluate the benefits of RowClone by focusing on fork, one of the frequently invoked system calls, and five other copy and initialization intensive applications. Our results show that RowClone can significantly improve both single-core and multi-core system performance, while also significantly reducing main memory bandwidth and energy consumption.

Improving DRAM performance by parallelizing refreshes with accesses

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR (double data rate) DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire DRAM rank from serving memory requests while being refreshed. DRAM designed for mobile platforms, LPDDR (low power DDR) DRAM, supports an enhanced mode, called per-bank refresh, that refreshes cells at the bank level. This enables a bank to be accessed while another in the same rank is being refreshed, alleviating part of the negative performance impact of refreshes. Unfortunately, there are two shortcomings of per-bank refresh employed in todays systems. First, we observe that the perbank refresh scheduling scheme does not exploit the full potential of overlapping refreshes with accesses across banks because it restricts the banks to be refreshed in a sequential round-robin order. Second, accesses to a bank that is being refreshed have to wait. To mitigate the negative performance impact of DRAM refresh, we propose two complementary mechanisms, DARP (Dynamic Access Refresh Parallelization) and SARP (Subarray Access Refresh Parallelization). The goal is to address the drawbacks of per-bank refresh by building more efficient techniques to parallelize refreshes and accesses within DRAM. First, instead of issuing per-bank refreshes in a round-robin order, as it is done today, DARP issues per-bank refreshes to idle banks in an out-of-order manner. Furthermore, DARP proactively schedules refreshes during intervals when a batch of writes are draining to DRAM. Second, SARP exploits the existence of mostly-independent subarrays within a bank. With minor modifications to DRAM organization, it allows a bank to serve memory accesses to an idle subarray while another subarray is being refreshed. Extensive evaluations on a wide variety of workloads and systems show that our mechanisms improve system performance (and energy efficiency) compared to three state-of-the-art refresh policies and the performance benefit increases as DRAM density increases.

Adaptive-latency DRAM: Optimizing DRAM timing for the common-case

In current systems, memory accesses to a DRAM chip must obey a set of minimum latency restrictions specified in the DRAM standard. Such timing parameters exist to guarantee reliable operation. When deciding the timing parameters, DRAM manufacturers incorporate a very large margin as a provision against two worst-case scenarios. First, due to process variation, some outlier chips are much slower than others and cannot be operated as fast. Second, chips become slower at higher temperatures, and all chips need to operate reliably at the highest supported (i.e., worst-case) DRAM temperature (85° C). In this paper, we show that typical DRAM chips operating at typical temperatures (e.g., 55° C) are capable of providing a much smaller access latency, but are nevertheless forced to operate at the largest latency of the worst-case. Our goal in this paper is to exploit the extra margin that is built into the DRAM timing parameters to improve performance. Using an FPGA-based testing platform, we first characterize the extra margin for 115 DRAM modules from three major manufacturers. Our results demonstrate that it is possible to reduce four of the most critical timing parameters by a minimum/maximum of 17.3%/54.8% at 55°C without sacrificing correctness. Based on this characterization, we propose Adaptive-Latency DRAM (AL-DRAM), a mechanism that adoptively reduces the timing parameters for DRAM modules based on the current operating condition. AL-DRAM does not require any changes to the DRAM chip or its interface. We evaluate AL-DRAM on a real system that allows us to reconfigure the timing parameters at runtime. We show that AL-DRAM improves the performance of memory-intensive workloads by an average of 14% without introducing any errors. We discuss and show why AL-DRAM does not compromise reliability. We conclude that dynamically optimizing the DRAM timing parameters can reliably improve system performance.

Accelerating read mapping with FastHASH

With the introduction of next-generation sequencing (NGS) technologies, we are facing an exponential increase in the amount of genomic sequence data. The success of all medical and genetic applications of next-generation sequencing critically depends on the existence of computational techniques that can process and analyze the enormous amount of sequence data quickly and accurately. Unfortunately, the current read mapping algorithms have difficulties in coping with the massive amounts of data generated by NGS.We propose a new algorithm, FastHASH, which drastically improves the performance of the seed-and-extend type hash table based read mapping algorithms, while maintaining the high sensitivity and comprehensiveness of such methods. FastHASH is a generic algorithm compatible with all seed-and-extend class read mapping algorithms. It introduces two main techniques, namely Adjacency Filtering, and Cheap K-mer Selection.We implemented FastHASH and merged it into the codebase of the popular read mapping program, mrFAST. Depending on the edit distance cutoffs, we observed up to 19-fold speedup while still maintaining 100% sensitivity and high comprehensiveness.

The Blacklisting Memory Scheduler: Achieving high performance and fairness at low cost

In a multicore system, applications running on different cores interfere at main memory. This inter-application interference degrades overall system performance and unfairly slows down applications. Prior works have developed application-aware memory request schedulers to tackle this problem. State-of-the-art application-aware memory request schedulers prioritize memory requests of applications that are vulnerable to interference, by ranking individual applications based on their memory access characteristics and enforcing a total rank order. In this paper, we observe that state-of-the-art application-aware memory schedulers have two major shortcomings. First, ranking applications individually with a total order based on memory access characteristics leads to high hardware cost and complexity. Second, ranking can unfairly slow down applications that are at the bottom of the ranking stack. To overcome these shortcomings, we propose the Blacklisting Memory Scheduler (BLISS), which achieves high system performance and fairness while incurring low hardware cost and complexity. BLISS design is based on two new observations. First, we find that, to mitigate interference, it is sufficient to separate applications into only two groups, one containing applications that cause interference and another containing applications vulnerable to interference, instead of ranking individual applications with a total order. Vulnerable-to-interference group is prioritized over the interference-causing group. Second, we show that this grouping can be efficiently performed by simply counting the number of consecutive requests served from each application - an application that has a large number of consecutive requests served is dynamically classified as interference-causing. We evaluate BLISS across a wide variety of workloads and system configurations and compare its performance and complexity with five state-of-the-art memory schedulers. Our evaluations show that BLISS achieves 5% better system performance and 25% better fairness than the best-performing previous memory scheduler while greatly reducing critical path latency and hardware area cost of the memory scheduler (by 79% and 43%, respectively).

ChargeCache: Reducing DRAM latency by exploiting row access locality

DRAM latency continues to be a critical bottleneck for system performance. In this work, we develop a low-cost mechanism, called ChargeCache, that enables faster access to recently-accessed rows in DRAM, with no modifications to DRAM chips. Our mechanism is based on the key observation that a recently-accessed row has more charge and thus the following access to the same row can be performed faster. To exploit this observation, we propose to track the addresses of recently-accessed rows in a table in the memory controller. If a later DRAM request hits in that table, the memory controller uses lower timing parameters, leading to reduced DRAM latency. Row addresses are removed from the table after a specified duration to ensure rows that have leaked too much charge are not accessed with lower latency. We evaluate ChargeCache on a wide variety of workloads and show that it provides significant performance and energy benefits for both single-core and multi-core systems.

Fast Bulk Bitwise AND and OR in DRAM

Bitwise operations are an important component of modern day programming, and are used in a variety of applications such as databases. In this work, we propose a new and simple mechanism to implement bulk bitwise AND and OR operations in DRAM, which is faster and more efficient than existing mechanisms. Our mechanism exploits existing DRAM operation to perform a bitwise AND/OR of two DRAM rows completely within DRAM. The key idea is to simultaneously connect three cells to a bitline before the sense-amplification. By controlling the value of one of the cells, the sense amplifier forces the bitline to the bitwise AND or bitwise OR of the values of the other two cells. Our approach can improve the throughput of bulk bitwise AND/OR operations by 9:7X and reduce their energy consumption by 50:5X. Since our approach exploits existing DRAM operation as much as possible, it requires negligible changes to DRAM logic. We evaluate our approach using a real-world implementation of a bit-vector based index for databases. Our mechanism improves the performance of commonly-used range queries by 30 percent on average.