Dongxiang Luo

Doping-free white organic light-emitting diodes without blue molecular emitter: An unexplored approach to achieve high performance via exciplex emission

Doping-free white organic light-emitting diodes (DF-WOLEDs) are promising for the low-cost commercialization because of their simplified device structures. However, DF-WOLEDs reported thus far in the literature are based on the use of blue single molecular emitters, whose processing can represent a crucial point in device manufacture. Herein, DF-WOLEDs without the blue single molecular emitter have been demonstrated by managing a blue exciplex system. For the single-molecular-emitter (orange or yellow emitter) DF-WOLEDs, (i) a color rendering index (CRI) of 81 at 1000 cd/m2 can be obtained, which is one of the highest for the single-molecular-emitter WOLEDs, or (ii) a high efficiency of 35.4 lm/W can be yielded. For the dual-molecular-emitter (yellow/red emitters) DF-WOLED, a high CRI of 85 and low correlated color temperature of 2376 K at 1000 cd/m2 have been simultaneously achieved, which has not been reported by previous DF-WOLEDs. Such presented findings may unlock an alternative avenue to the simplif...

Colloidally synthesized MoSe 2 nano-flowers anchored on three-dimensional porous reduced graphene oxide thin films as advanced counter electrode for dye-sensitized solar cells

In this letter, MoSe2 nanosheets with flower-like nanostructure was in-situ grown on pre-coated three-dimensional (3D) porous reduced graphene oxide (rGO) thin films on fluorine-doped tin oxide glass by a facile hydrothermal method. The synergistic effect between the highly catalytic MoSe2 nanostructure and the highly conductive and large surface-area 3D rGO network endows the resultant MoSe2/rGO composite excellent electrocatalytic ability. As expected, dye-sensitized solar cells (DSSCs) prepared with MoSe2/rGO thin films as counter electrode (CE) exhibited a conversion efficiency of 6.56%, which was higher than that of DSSCs with sputtered Pt CE (6.08%).

Tunable Polarity Behavior and High-Performance Photosensitive Characteristics in Schottky-Barrier Field-Effect Transistors Based on Multilayer WS2

Schottky-barrier field-effect transistors (SBFETs) based on multilayer WS2 with Au as drain/source contacts are fabricated in this paper. Interestingly, the novel polarity behavior of the WS2 SBFETs can be modulated by drain bias, ranging from p-type to ambipolar and finally to n-type conductivity, due to the transition of band structures and Schottky-barrier heights under different drain and gate biases. The electron mobility and the on/off ratio of electron current can reach as high as 23.4 cm2/(V s) and 8.5 × 107, respectively. Moreover, the WS2 SBFET possesses high-performance photosensitive characteristics with response time of 40 ms, photoresponsivity of 12.4 A/W, external quantum efficiency of 2420%, and photodetectivity as high as 9.28 × 1011 cm Hz1/2/W. In conclusion, the excellent performance of the WS2 SBFETs may pave the way for next-generation electronic and photoelectronic devices.