Douglas Gordon

Advances in Precursor Development for CVD of Bariumcontaining Materials

Barium titanate and barium-strontium titanate (BST) are high dielectric materials, likely to replace state-of-the-art capacitor materials for memory applications. Chemical Vapor Deposition (CVD) of these materials has been hampered, particularly by the lack of suitable precursors for barium. Although attempts to make volatile metal-organic barium compounds have met with some progress, a suitably stable, volatile barium source is still in demand. This paper will highlight recent developments at ATM, including syntheses and structures of polyamine and glycol ether adducts which have been designed to limit aggregation of barium diketonates, and stabilize the adducts with respect to ligand dissociation.

Isolation and structural determination of octacyanobutanediide, [C4(CN)8]2–; precursors to M(TCNE)x magnets‡

The reaction of MI2·xMe3CN (M = Mn, Fe) and TCNE (tetracyanoethylene) leads to unprecedented [C4(CN)8]2– µ4-metal complexes which have been crystallographically characterized and are precursors to M(TCNE)x·yS magnets.