E. A. Chusovitin

Study of ultrathin iron silicide films grown by solid phase epitaxy on the Si(001) surface

Ultrathin films of iron silicide have been grown by high-temperature annealing of 0.14-to O.5O-nm-thick Fe films deposited on the Si(001) surface at room temperature. It has been found that annealing leads to the formation of nanoislands of iron silicide on the surface, so that their type depends on the thickness of the Fe film. High-energy electron diffraction and atomic force microscopy measurements have revealed that the deposition of Fe films less than 0.32 nm thick on the Si(001) surface stimulates epitaxial growth of both three-dimensional β-FeSi2 and two-dimensional γ-FeSi2 islands. It has been found that, for Fe coverages of more than 0.32 nm thick, a complete transition to solide phase epitaxy is observed only for two-dimensional β-FeSi2 islands. The effect of prolonged annealing at 850°C on the morphology of the surface of the iron silicide film has been investigated.

Influence of defects in a silicon dioxide thin layer on the processes of silicidation in the Fe/SiO2/Si(001) system

The kinetics of the evolution of the structure and phase composition of the Fe/SiO2/Si(001) system under different conditions for deposition of the iron layer and subsequent annealing is considered. It is established that the SiO2 thin layer (∼1 nm) is not destroyed during iron deposition over a wide temperature range from 20 to 650°C. As a result, iron films with different morphologies are formed on the surface of the oxide. Annealing leads to the destruction of the SiO2 layer at defect sites. This brings about the interaction of iron atoms with the silicon substrate and subsequent formation of iron silicides.