E. A. Meneses

Temperature dependence of optical transitions in AlGaAs

AlGaAs structures with different aluminum concentration (x=0.0, 0.17, 0.30, and 0.40) were characterized by photoluminescence and photoreflectance techniques. The temperature dependence of optical transitions in the temperature ranging from 2 to 300 K were investigated. Y. P. Varshni [Physica (Utrecht) 34, 194 (1967)], L. Vina et al. [Phys. Rev. B 30, 1979 (1984)], and R. Passler [Phys. Status Solidi B 200, 155 (1997)] models were used to fit the experimental points. The Passler model gave the best adjustment to the experimental points. The tree models showed that the empirical parameters obtained through the adjustment of the experimental data in the three different models are aluminum composition dependent in the ternary alloy.

Hole confinement effects on multiple Si δ doping in GaAs

The observation of quantum‐confined optical transitions in multiple δ doping in GaAs, grown by molecular beam epitaxy, is reported. Doping efficiency and carrier confinement are investigated by Hall and photoluminescence measurements. Hall measurement results for multiple δ‐doped samples show a dramatic enhancement of carrier concentrations compared to the uniform doping case. From photoluminescence spectra we observed that the cutoff energy is significantly affected by the spacing between the dopant sheets. The strong localization of confined photoexcited holes in the spacing layers of these structures plays a fundamental role in the interpretation of the optical data.

Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

Photoluminescence (PL) spectroscopy and atomic-force microscopy (AFM) were used to investigate the size evolution of InAs quantum dots on GaAs(001) as a function of the amount of InAs material. Different families of islands were observed in the AFM images and unambiguously identified in the PL spectra, together with the signal of the wetting layer. PL measurements carried out at low and intermediate temperatures showed a thermal carrier redistribution among dots belonging to different families. The physical origin of this behavior is explained in terms of the different temperature dependence of the carrier-capture rate into the quantum dots. At high temperatures, an enhancement of the total PL-integrated intensity of the largest-sized quantum dots was attributed to the increase of diffusivity of the photogenerated carriers inside the wetting layer.

Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells

Photoluminescence (PL) and excitation PL measurements have been performed at different temperatures in a number of lattice-matched GaAs/In0.49Ga0.51P quantum wells, where the uctuations of the potential energy are comparable with the thermal energy of the photocreated carriers. Two samples with different well widths allow to observe a series of anomalous e ects in their optical response. The observed effects are related to the disorder in the interface, characterizing uctuations in the confinement potential energy. It is proposed that the carrier relaxation processes occur either at the local minima or at the absolute minimum of the confinement potential, depending on the ratio of the thermal energy and the magnitude of the potential fluctuations.

Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate

In this work we report optical experiments on pseudomorphic cubic InxGa1−xN epilayers grown on cubic GaN/3C-SiC templates. We make a detailed study of photoluminescence (PL) and photoluminescence excitation spectroscopy on these samples, with spectra taken at various temperatures (between 2 K and 300 K) and using variable wavelength sources to excite the PL spectra. The combined use of these techniques suggests the existence of indium-rich clusters, constituting a negligibly small fraction of the volume of the total layer. Our results reinforce the notion that the large Stokes-like shift (a difference of approximately 300 meV between emission and absorption) observed in these samples is due to the fact that light absorption occurs in the bulk alloy of average composition while recombination occurs within the indium-rich clusters.

On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islands

We investigate the effects of the interface morphology on the electronic properties of InAs/In systems using in-air atomic force microscopy and low temperature photoluminescence. Atomic force microscopy results show that the distribution of InAs strained film into three-dimensional islands and the two-dimensional wetting layer—typical of the Stranski–Krastanov growth mode—is strongly affected by the characteristics of the substrate and by the morphology of the InP buffer layer. The differences in the optical data are correlated to the different interface characteristics observed by atomic force microscopy. We discuss the origin of emission peaks taking into account the diffusion process of adsorbed atoms on the different types of surface.

Influence of illumination on the quantum mobility of a two-dimensional electron gas in si δ-doped GaAs/In0.15Ga0.85As quantum wells

A series of GaAs/InGaAs quantum wells with a silicon δ-doped layer in the top barrier was investigated by Shubnikov–de Haas measurements as a function of the illumination time of the samples. During the illumination process strong modifications of the electronic density and the quantum mobility of each occupied subband were observed. Based on self-consistent calculations, the dominant mechanism which caused the changes in the subband quantum mobilities with illumination was elucidated.

Synchrotron x-ray multiple diffraction in the study of Fe+ ion implantation in Si(0 0 1)

In this work, x-ray multiple diffraction has been used as a three-dimensional high-resolution probe to study the Fe+ ion implantation process in Si(0?0?1). The semiconducting ?-FeSi2 crystallographic phase has been synthesized by Fe ion co-implantation in Si(0?0?1) followed by ion-beam-induced epitaxial crystallization (IBIEC) and thermal treatment. This phase was clearly detected by the conventional techniques, micro-Raman scattering spectroscopy, transmission electron microscopy (TEM) and grazing incidence x-ray diffraction. Synchrotron radiation rocking curves (?-scans) and mapping of the Bragg surface diffraction (BSD) of the Si matrix, as-implanted, after the IBIEC process and thermally treated, have enabled the detection of co-implanted regions formation that present distinct lattices in comparison with the matrix one clearly observed by TEM. Also, the compressive strain of both regions in depth by rocking curve and in-plane has been determined by using BSD, which is one order of magnitude smaller.

Near band-edge optical properties of cubic GaN with and without carbon doping

We report the results of studying the optical properties of cubic GaN thin films with photoluminescence and photoluminescence excitation spectroscopies. The films are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) substrates, with and without intentional doping with carbon atoms (p-type doping). The evolution of the optical spectra of the C-doped samples is consistent with a picture in which carbon enters into N-vacancies at low concentrations, producing a marked improvement in the crystalline properties of the material. At higher concentrations it begins to form complexes, possibly due to interstitial occupation. The temperature dependence on the absorption edge of the doped material is also measured and is analyzed with standard theoretical models.

Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates

Abstract The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300xa0K. The epilayers were grown on GaAs(0xa00xa01) substrates by molecular beam epitaxy using a nitrogen RF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor.