E. Cánovas

Emitter degradation in quantum dot intermediate band solar cells

The characteristics of intermediate band solar cells containing 10, 20, and 50 InAs quantum dot (QD) layers embedded in otherwise “standard” (Al,Ga)As solar cell structures have been compared. The short-circuit current densities of the cells decreased and the quantum efficiencies of the devices showed a concomitant reduction in the minority carrier lifetime in the p emitters with increasing number of QD layers. Dislocations threading up from the QDs toward the surface of the cells, and revealed by bright field scanning transmission electron microscopy, are the most likely cause of the deterioration in the electrical performance of the cells.

Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells

The intermediate-band solar cell (IBSC) has been proposed as a device whose conversion efficiency can exceed the 40.7% limiting value of single-gap cells. It utilizes the so-called intermediate-band material, characterized by the existence of a band that splits an otherwise conventional semiconductor bandgap into two sub-bandgaps. Two important criteria for its operation are that the carrier populations in the conduction, valence, and intermediate-bands are each described by their own quasi-Fermi levels, and that photocurrent is produced when the cell is illuminated with below-bandgap-energy photons. IBSC prototypes have been manufactured from InAs quantum dot structures and analyzed by electroluminescence and quantum efficiency measurements. We present evidence to show that the two main operating principles required of the IBSC are fulfilled.

Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate band

A photovoltaic device based on an intermediate electronic band located within the otherwise conventional band gap of a semiconductor, the so-called intermediate band solar cell (IBSC), has been proposed for a better utilization of the solar spectrum. Experimental IBSC devices have been engineered using quantum dot technology, but their practical implementation results in a departure of key underpinning theoretical principles, assumed to describe the operation of the IBSC, away from the ideal. Two principles which are only partially fulfilled are that (i) the intermediate band should be half filled with electrons and (ii) the region containing the quantum dots should not be located fully within the junction depletion region. A model to describe the operation of the devices under these nonidealized conditions is presented and is used to interpret experimental results for IBSCs with ten layers of quantum dots. Values for the electron and hole lifetimes, associated with recombination from the conduction band ...

Multiple levels in intermediate band solar cells

The presence of multiple energy levels in the intermediate band solar cell (IBSC) is studied by detailed balance calculations under ideal conditions. Multiple levels are found experimentally in IBSCs made with quantum dots (QDs) which act to reduce the limiting efficiency determined from detailed balance calculations. JL-VOC measurements up to 1000 suns on IBSCs are presented together with their fitting to modified detailed balance calculations. It is found that the introduction of the QDs degrades the performance of the host cell but the sub-bandgap cell operates close to ideality.

Photoreflectance analysis of a GaInP/GaInAs/Ge multijunction solar cell

We have analyzed the photoreflectance spectra of a GaInP/GaInAs/Ge triple junction solar cell. The spectra reveal signatures from the window layer and middle and top subcells included in the stack. Additional contributions from the multilayer buffer introduced between the mismatched bottom and middle cells have been detected. Franz–Keldysh oscillations (FKOs) dominate the spectra above the fundamental bandgaps of the GaInP and GaInAs absorbers. From the FKO analysis, we have estimated the dominant electric fields within each subcell. In light of these results, photoreflectance is proposed as a useful diagnostic tool for quality assessment of multijunction structures prior to completion of the device or at earlier stages during its processing.

Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells

III-Nx–V1−x highly mismatched alloys (HMAs) have been proposed as promising material candidates for the development of high efficiency solar cells. According to the band anticrossing model, these alloys present a multiband character with an intermediate band within the otherwise fundamental bandgap that gives them the ability of improving the efficiency by means of below-bandgap photon absorption. The efficiency of GaNxAs1−x, GaNxP1−x, and their quaternaries InyGa1−yNxAs1−x and GaNxP1−x−yAsy is estimated theoretically versus nitrogen content in this letter. Low nitrogen content in the range of 1%–3.5% in the HMAs analyzed leads to theoretical efficiencies above 60%.III-Nx–V1−x highly mismatched alloys (HMAs) have been proposed as promising material candidates for the development of high efficiency solar cells. According to the band anticrossing model, these alloys present a multiband character with an intermediate band within the otherwise fundamental bandgap that gives them the ability of improving the efficiency by means of below-bandgap photon absorption. The efficiency of GaNxAs1−x, GaNxP1−x, and their quaternaries InyGa1−yNxAs1−x and GaNxP1−x−yAsy is estimated theoretically versus nitrogen content in this letter. Low nitrogen content in the range of 1%–3.5% in the HMAs analyzed leads to theoretical efficiencies above 60%.

Hot carrier solar cells: Challenges and recent progress

The limiting efficiency on the conversion efficiency of terrestrial global sunlight is not circa 31%, as commonly assumed, but 74%. To reach the lowest possible costs and hence to attain its intrinsic potential as a major source of future sustainable energy supplies, it would appear photovoltaics has to evolve to devices targeting the latter efficiency rather than the former. The hot carrier solar cell, although presenting substantial device challenges, is arguably the highest efficiency photovoltaic device concept yet suggested and hence worthy of efforts to investigate its practicality. Challenges in the implementation of hot carrier cells are identified and progress in overcoming these are discussed.

IBPOWER: Intermediate band materials and solar cells for photovoltaics with high efficiency and reduced cost

IBPOWER is a Project awarded under the 7th European Framework Programme that aims to advance research on intermediate band solar cells (IBSCs). These are solar cells conceived to absorb below bandgap energy photons by means of an electronic energy band that is located within the semiconductor bandgap, whilst producing photocurrent with output voltage still limited by the total semiconductor bandgap. IBPOWER employs two basic strategies for implementing the IBSC concept. The first is based on the use of quantum dots, the IB arising from the confined energy levels of the electrons in the dots. Quantum dots have led to devices that demonstrate the physical operation principles of the IB concept and have allowed identification of the problems to be solved to achieve actual high efficiencies. The second approach is based on the creation of bulk intermediate band materials by the insertion of an appropriate impurity into a bulk semiconductor. Under this approach it is expected that, when inserted at high densities, these impurities will find it difficult to capture electrons by producing a breathing mode and will cease behaving as non-radiative recombination centres. Towards this end the following systems are being investigated: a) Mn: In1-xGaxN; b) transition metals in GaAs and c) thin films.

Light management issues in intermediate band solar cells

ABSTRACT This paper discusses several topics related to light management that improve our understanding of the performance and potential of the intermediate band solar cell (IBSC). These topics are photon recycling, photon selectivity and light confinement. It is found that neglecting photon recycling leads to underestimate the limiting efficiency of the IBSC in 7 points (56.1 % vs 63.2 %). Light trapping allows to effectively absorbing photons whose energy is associated to the weakest of the optical transitions in the IBSC, allowing also for higher efficiencies with lower device thickness. The impact of photon selectivity on the cell performance is also discussed. INTRODUCTION The intermediate band solar cell (IBSC) is a novel type of solar cell conceived to effectively use the energy of below bandgap energy photons [1, 2]. To this end, it requires the existence of an intermediate band (IB) located within the semiconductor bandgap (Fig. 1). This band divides the total bandgap of the semiconductor,

Thin Film Intermediate Band Chalcopyrite Solar Cells: Theoretical Analysis of Device Performance and Prospects for Their Realisation

The feasibility of implementing the intermediate-band (IB) concept into a relevant thin-film technology has been assessed. Compounds belonging to the group of I-III-VI2 chalcopyrites, currently used as absorbers in the leading thin-film technology, appear as promising candidates for the realization of IB-devices. In this paper we first analyze the expected performance of such a thin-film intermediate band solar cell (TF-IBSC) by considering different levels of idealization. In the second part of the paper some issues relevant for the practical realization of IBs in chalcopyrites are discussed and impurities acting as potential IB-precursors in the chalcopyrite sulfide host identified.