E. Cicek

Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)

We report on the development of surface plasmon (SP) enhanced AlGaN-based multiple quantum wells (MQWs) ultraviolet (UV) light-emitting diodes (LEDs) grown on silicon (111) substrates. In order to generate SP-coupling with the radiating dipoles in MQWs, an aluminum layer is selectively deposited in holes etched in the top p-AlGaN to p-GaN layers. After flip-chip bonding and substrate removal, an optical output power of ∼1.2 mW is achieved at an emission wavelength of 346 nm; the output power of these UV LEDs with Al layer is increased by 45% compared to that of conventional UV LEDs without Al layer. This enhancement can be attributed to an increase in the spontaneous emission rate and improved internal quantum efficiency via resonance coupling between excitons in MQWs and SPs in the aluminum layer.

AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

We report on high performance AlxGa1−xN-based solar-blind ultraviolet photodetector (PD) array grown on sapphire substrate. First, high quality, crack-free AlN template layer is grown via metalorganic chemical vapor deposition. Then, we systematically optimized the device design and material doping through the growth and processing of multiple devices. After optimization, uniform and solar-blind operation is observed throughout the array; at the peak detection wavelength of 275 nm, 729 μm2 area PD showed unbiased peak external quantum efficiency and responsivity of ∼80% and ∼176 mA/W, respectively, increasing to 89% under 5 V of reverse bias. Taking the reflection loses into consideration, the internal quantum efficiency of these optimized PD can be estimated to be as high as ∼98%. The visible rejection ratio measured to be more than six orders of magnitude. Electrical measurements yielded a low-dark current density: <2 × 10−9 A/cm2, at 10 V of reverse bias.

Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

We report on the growth, fabrication, and device characterization of AlGaN-based thin-film ultraviolet (UV) (λ ∼ 359 nm) light emitting diodes (LEDs). First, AlN/Si(111) template is patterned. Then, a fully coalesced 7-μm-thick lateral epitaxial overgrowth (LEO) of AlN layer is realized on patterned AlN/Si(111) template followed by UV LED epi-regrowth. Metalorganic chemical vapor deposition is employed to optimize LEO AlN and UV LED epitaxy. Back-emission UV LEDs are fabricated and flip-chip bonded to AlN heat sinks followed by Si(111) substrate removal. A peak pulsed power and slope efficiency of ∼0.6 mW and ∼1.3 μW/mA are demonstrated from these thin-film UV LEDs, respectively. For comparison, top-emission UV LEDs are fabricated and back-emission LEDs are shown to extract 50% more light than top-emission ones.

GaN avalanche photodiodes grown on m-plane freestanding GaN substrate

M-plane GaN avalanche p-i-n photodiodes on low dislocation density freestanding m-plane GaN substrates were realized using metal-organic chemical vapor deposition. High quality homoepitaxial m-plane GaN layers were developed; the root-mean-square surface roughness was less than 1 A and the full-width-at-half-maximum value of the x-ray rocking curve for (101¯0) diffraction of m-plane GaN epilayer was 32 arcsec. High quality material led to a low reverse-bias dark current of 8.11 pA for 225 μm2 mesa photodetectors prior to avalanche breakdown, with the maximum multiplication gain reaching about 8000.

Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

GaN avalanche photodiodes (APDs) were grown on both conventional sapphire and low dislocation density free-standing (FS) c-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. At a reverse-bias of 70 V, APDs grown on sapphire substrates exhibited a dark current density of 2.7×10−4 A/cm2 whereas APDs grown on FS-GaN substrates had a significantly lower dark current density of 2.1×10−6 A/cm2. Under linear-mode operation, APDs grown on FS-GaN achieved avalanche gain as high as 14 000. Geiger-mode operation conditions were studied for enhanced SPDE. Under front-illumination the 625-μm2-area APD yielded a SPDE of ∼13% when grown on sapphire substrates compared to more than 24% when grown on FS-GaN. The SPDE of the same APD on sapphire substrate increased to ∼30% under back-illumination—the FS-GaN APDs were only tested under front illumination due to the thick absorbing GaN substrate.

Al x Ga 1−x N–based deep-ultraviolet 320×256 focal plane array

We report the synthesis, fabrication, and testing of a 320×256 focal plane array (FPA) of back-illuminated, solar-blind, p-i-n, Al(x)Ga(1-x)N-based detectors, fully realized within our research laboratory. We implemented a pulse atomic layer deposition technique for the metalorganic chemical vapor deposition growth of thick, high-quality, crack-free, high Al composition Al(x)Ga(1-x)N layers. The FPA is hybridized to a matching ISC 9809 readout integrated circuit and operated in a SE-IR camera system. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower, and falling off three orders of magnitude by ~285 nm. By developing an opaque masking technology, the visible response of the ROIC is significantly reduced; thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allows the FPA to achieve high external quantum efficiency (EQE); at 254 nm, average pixels showed unbiased peak responsivity of 75 mA/W, which corresponds to an EQE of ~37%. Finally, the uniformity of the FPA and imaging properties are investigated.

Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy

We report on crack reduction for solar-blind ultraviolet detectors via the use of a reduced area epitaxy (RAE) method to regrow on patterned AlN templates. With the RAE method, a pre-deposited AlN template is patterned into isolated mesas in order to reduce the formation of cracks in the subsequently grown high Al-content AlxGa1−xN structure. By restricting the lateral dimensions of the epitaxial growth area, the biaxial strain is relaxed by the edges of the patterned squares, which resulted in ∼97% of the pixels being crack-free. After successful implementation of RAE method, we studied the optical characteristics, the external quantum efficiency, and responsivity of average pixel-sized detectors of the patterned sample increased from 38% and 86.2 mA/W to 57% and 129.4 mA/W, respectively, as the reverse bias is increased from 0 V to 5 V. Finally, we discussed the possibility of extending this approach for focal plane array, where crack-free large area material is necessary for high quality imaging.

AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

We report on AlxGa1−xN-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm2 area PD showed unbiased peak external quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10−8 A/cm2 at 10 V reverse bias.

High Performance Solar-Blind Ultraviolet \(320 \times 256\) Focal Plane Arrays Based on Al x Ga 1- x N

We report on solar-blind ultraviolet, Al_xGa_1-x N-based, p-i-n, focal plane array (FPA) with 92% operability. At the peak detection wavelength of 278 nm, 320 × 256-FPApixel showed unbiased peak external quantum efficiency and responsivity of 49% and 109 mA/W, respectively, increasing to 66% under 5 V of reverse bias. Electrical measurements yielded a low-dark current density: <;7 × 10^-9 A/cm², at FPA operating voltage of 2 V of reverse bias.

III-nitride-based avalanche photo detectors

Research into III-Nitride based avalanche photodiodes (APDs) is motivated by the need for high sensitivity ultraviolet (UV) detectors in numerous civilian and military applications. By designing III-Nitride photodetectors that utilize low-noise impact ionization high internal gain can be realized-GaN APDs operating in Geiger mode can achieve gains exceeding 1×107. Thus with careful design, it becomes possible to count photons at the single photon level. In this paper we review the current state of the art in III-Nitride visible-blind APDs and discuss the critical design choices necessary to achieve high performance Geiger mode devices. Other major technical issues associated with the realization of visible-blind Geiger mode APDs are also discussed in detail and future prospects for improving upon the performance of these devices are outlined. The photon detection efficiency, dark count rate, and spectral response of or most recent Geiger-mode GaN APDs on free-standing GaN substrates are studied under low photon fluxes, with single photon detection capabilities being demonstrated. We also present our latest results regarding linear mode gain uniformity: the study of gain uniformity helps reveal the spatial origins of gain so that we can better understand the role of defects.