E. Crescio

Characteristics of the ALICE Silicon Drift Detector

A Silicon Drift Detector (SDD) with an active area of 7:0 � 7: 5c m 2 has been designed, produced and tested for the ALICE Inner Tracking System. The development of the SDD has been focused on the capability of the detector to work without an external support to the integrated high-voltage divider. Several features have been implemented in the design in order to increase the robustness and the long-term electrical stability of the detector. One of the prototypes has been tested in a pion beam at the CERN SPS. Preliminary results on the position resolution are given. # 2001 Elsevier Science B.V. All rights reserved.

Correction of dopant concentration fluctuation effects in silicon drift detectors

Abstract Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations.

Analysis of radiation effects on silicon strip detectors in the NA50 experiment

Abstract During the operation of the Multiplicity Detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences resulting in an equivalent 1xa0MeV neutron fluence up to 10 14 eq.xa0n/cm 2 and a total ionising dose up to 20 Mrad, with a very non-uniform radiation spatial distribution. In this paper detailed analysis of radiation effects observed on the detectors during the 1996 lead ion run as well as results of measurements performed after the run are presented.

Beam test results of the irradiated silicon drift detector for ALICE

The Inner Tracking System (ITS) of the ALICE experiment at LHC will use high precision Silicon Drift Detectors (SDD) in two of the six cylindrical layers. In this paper we report on the results of beam test of a SDD irradiated with 1 GeV electrons. The aim of this test was to verify the radiation tolerance of the device under an electron fluence equivalent to twice the particle fluence expected during 10 years of ALICE operation.

Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector

During the data taking of the NA50 experiment, the CMOS digital pipeline chips (CDP) used for the readout of the multiplicity detector were exposed to high levels of radiation resulting in an ionizing radiation dose of more than 200 krad and displacement damage equivalent to 1 MeV neutron fluence of more than 5 � 10 11 eq. neutrons cm � 2 : Some of these chips showed anomalies of behaviour which we attribute to radiation induced latchup phenomena. Here we present the analysis of the data taken during the 1996, 1998 and 1999 ion runs together with the results of measurements performed in the laboratory. r 2002 Elsevier Science B.V. All rights reserved. PACS: 85.40.Qx; 61.80

RADIATION DAMAGE OF SILICON STRIP DETECTORS IN THE NA50 EXPERIMENT

Abstract During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 10 14 xa0eqxa0n/cm 2 and ionising doses up to 20xa0Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the ’96 lead ion run as well as results of the post-run measurements are presented in this paper.

Recent results from beam tests of large area silicon drift detectors

Abstract Silicon drift detectors with an active area of 7.0 × 7.5 cm 2 will equip the two middle layers of the Inner Tracking System of the ALICE experiment. The performance of several prototypes was studied during beam tests carried out at the CERN SPS facility. The results of the beam test data analysis are discussed in this paper.