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Dive into the research topics where E.E. Ashkinazi is active.

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Featured researches published by E.E. Ashkinazi.


Laser Physics Letters | 2016

External-cavity diamond Raman laser performance at 1240 nm and 1485 nm wavelengths with high pulse energy

V.P. Pashinin; Victor Ralchenko; A.P. Bolshakov; E.E. Ashkinazi; M A Gorbashova; V.Yu. Yurov; V.I. Konov

We report on an external-cavity diamond Raman laser (DRL) pumped with a Q-switched Nd:YAG and generating at 1st and 2nd Stokes (1240 nm and 1485 nm) with enhanced output energy. The slope efficiency of 54% and output energy as high as 1.2 mJ in single pulse at 1240 nm have been achieved with optimized cavity, while the pulse energy of 0.70 mJ was obtained in the eye-safe spectral region at 1485 nm. Calculations of thermal lensing effect indicate it as a possible reason for the observed decrease in conversion efficiency at the highest pump energies.


CrystEngComm | 2018

Growth of three-dimensional diamond mosaics by microwave plasma-assisted chemical vapor deposition

Guoyang Shu; Bing Dai; Victor Ralchenko; Andrey Bolshakov; Andrei A. Khomich; E.E. Ashkinazi; Jiecai Han; Jiaqi Zhu

We realized the growth of a novel type of diamond mosaic crystal by chemical vapor deposition of a diamond layer on tightly placed oriented seed substrates, using a combination of seeds of different heights to form a three-dimensional structure. Here, a simple T-shaped mosaic is demonstrated as a proof of the principle. The 3D mosaic was epitaxially grown by microwave plasma CVD on (100)-oriented 3 × 3 × 1 mm3 type Ib HPHT diamond substrates arranged horizontally and vertically. Very straight and sharp junctions between the vertical and horizontal parts were observed and characterized with SEM. Confocal Raman spectroscopy mapping of the CVD diamond layer revealed only a narrow (∼20 μm wide) zone of enhanced defect abundance and/or non-uniform stress, if any, around the junction. The Raman and photoluminescence mapping of the mosaic’s cross-section gave further information on the spatial distribution of the epilayer with a thickness of up to 200 μm. The work demonstrates diamond growth on both sides of the vertically positioned seed plate, with a film thickness variation of less than 25%, thus doubling the diamond mass uptake achieved with the CVD process. The developed technique clears the way for the design and growth of various complex diamond shapes.


Diamond and Related Materials | 2016

High-rate growth of single crystal diamond in microwave plasma in CH4/H2 and CH4/H2/Ar gas mixtures in presence of intensive soot formation

Andrey Bolshakov; V.G. Ralchenko; V.Y. Yurov; A.F. Popovich; I.A. Antonova; A. A. Khomich; E.E. Ashkinazi; S.G. Ryzhkov; A.V. Vlasov; A. V. Khomich


Journal of Crystal Growth | 2017

Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy

Guoyang Shu; Bing Dai; Victor Ralchenko; A.A. Khomich; E.E. Ashkinazi; Andrey Bolshakov; S.N. Bokova-Sirosh; Kang Liu; Jiwen Zhao; Jiecai Han; Jiaqi Zhu


Carbon | 2016

Direct observation of graphenic nanostructures inside femtosecond-laser modified diamond

K.K. Ashikkalieva; T.V. Kononenko; E.A. Obraztsova; E.V. Zavedeev; A.A. Khomich; E.E. Ashkinazi; V.I. Konov


Physica Status Solidi (a) | 2017

Etching Kinetics of (100) Single Crystal Diamond Surfaces in a Hydrogen Microwave Plasma, Studied with In Situ Low-Coherence Interferometry

Vladimir Yurov; Egor Bushuev; Andrey Bolshakov; E.E. Ashkinazi; Irina Antonova; Evgeny V. Zavedeev; A. A. Khomich; Valery Voronov; Victor Ralchenko


Crystals | 2017

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

E.E. Ashkinazi; R. A. Khmelnitskii; Vadim Sedov; A. V. Khomich; Alexander V. Khomich; Viktor Ralchenko


Applied Physics A | 2016

Precise control of photoluminescence of silicon-vacancy color centers in homoepitaxial single-crystal diamond: evaluation of efficiency of Si doping from gas phase

Victor Ralchenko; Vadim Sedov; Vladimir Saraykin; Andrey Bolshakov; E.V. Zavedeev; E.E. Ashkinazi; A. V. Khomich


Journal of Crystal Growth | 2018

Vertical-substrate epitaxial growth of single-crystal diamond by microwave plasma-assisted chemical vapor deposition

Guoyang Shu; Bing Dai; Victor Ralchenko; Andrey Bolshakov; A.A. Khomich; E.E. Ashkinazi; V.Yu. Yurov; Kaili Yao; Kang Liu; Jiwen Zhao; Jiecai Han; Jiaqi Zhu


EPJ Web of Conferences | 2017

Express in-situ measurement of single crystal diamond growth/etching rate in microwave plasma: how to perform multiparametric kinetics study in one working day

Victor Ralchenko; V.Yu. Yurov; E.V. Bushuev; A.P. Bolshakov; E.E. Ashkinazi; I.A. Antonova; Evgeny V. Zavedeev; A. A. Khomich; V.I. Konov

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Victor Ralchenko

Harbin Institute of Technology

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V.G. Ralchenko

Russian Academy of Sciences

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Andrey Bolshakov

Harbin Institute of Technology

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Bing Dai

Harbin Institute of Technology

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Guoyang Shu

Harbin Institute of Technology

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Jiaqi Zhu

Harbin Institute of Technology

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Jiecai Han

Harbin Institute of Technology

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A. A. Khomich

Russian Academy of Sciences

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A. Bolshakov

Russian Academy of Sciences

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A. V. Khomich

Russian Academy of Sciences

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