E. Gu

CMOS driven micro-pixel LEDs integrated with single photon avalanche diodes for time resolved fluorescence measurements

We describe a single chip approach to time resolved fluorescence measurements based on time correlated single photon counting. Using a single complementary metal oxide silicon (CMOS) chip, bump bonded to a 4 × 16 array of AlInGaN UV micro-pixellated light-emitting diodes, a prototype integrated microsystem has been built that demonstrates fluorescence excitation and detection on a nanosecond time scale. Demonstrator on-chip measurements of lifetimes of fluorescence colloidal quantum dot samples are presented.

Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode

We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-μm diam, over a distance of more than 500μm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-μm diam and 30-μm spacing was transferred into an i-line photoresist.

Hybrid inorganic/organic microstructured light-emitting diodes produced using photocurable polymer blends

Light-emitting diodes (LEDs) in the form of a one-dimensional array of microstripes emitting at 370nm were fabricated from AlInGaN inorganic semiconductor. These microlight sources were then used to “directly write” microstructures in photocurable blends of organic light-emitting polymers (LEPs) spin coated onto the LED surface. In this way, thin microstripes of LEP as narrow as 50μm have been fabricated and integrated with the micro-LEDs. These “self-aligned” polymer microstripes serve as wavelength downconverters under further excitation by the UV micro-LEDs, producing hybrid inorganic/organic microstructured LEDs.

Polymer microlens arrays applicable to AlInGaN ultraviolet micro-light-emitting diodes

We report on the fabrication of high-optical-quality microlens arrays based on ultraviolet (UV)-curable polymer adhesive. The lenses are suitable, amongst other applications, for high-transmission and projection of the output of UV micropixellated light-emitting diodes. The microlenses were fabricated using a resist-reflow technique with reactive ion etching. An O/sub 2/--CF/sub 4/ etch-gas chemistry, where atomic fluorine eliminates the carbon-related polymer residue at the etch front effectively, resulted in etch rates of 1.4 /spl mu/m per minute for the polymer. Spherical microlenses of root mean square surface roughness 3 nm were obtained.

Mask-less ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes

We report on an approach to ultraviolet (UV) photolithography and direct writing where both the exposure pattern and dose are determined by a complementary metal oxide semiconductor (CMOS) controlled micro-pixellated light emitting diode array. The 370 nm UV light from a demonstrator 8 x 8 gallium nitride micro-pixel LED is projected onto photoresist covered substrates using two back-to-back microscope objectives, allowing controlled demagnification. In the present setup, the system is capable of delivering up to 8.8 W/cm2 per imaged pixel in circular spots of diameter approximately 8 microm. We show example structures written in positive as well as in negative photoresist.

High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layers

Microstructures containing GaN/air distributed Bragg reflector (DBR) regions were fabricated by a selective wet etch to remove sacrificial AlInN layers from GaN-AlInN multilayers. The epitaxial multilayers were grown on free-standing GaN substrates, and contained AlInN essentially lattice matched with GaN in order to minimize strain. Two geometries were defined for study by standard lithographic techniques and dry etching: cylindrical pillars and doubly anchored rectangular bridges. Microreflectivity spectra were recorded from the air-gap DBRs, and indicated peak reflectivities exceeding 70% for a typical 3-period microbridge. These values are likely to be limited by the small scale of the features in comparison with the measurement spot. The stopband in this case was centred at 409 nm, and the reflectivity exceeded 90% of the maximum over 73 nm. Simulations of reflectance spectra, including iterations to layer thicknesses, gave insight into the tolerances achievable in processing, in particular indicating bounds on the parasitic removal of GaN layers during wet etching. Air-gap nitride DBRs as described can be further developed in various ways, including adaptation for electrostatic tuning, incorporation into microcavities, and integration with active emitters.

The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

Previously, we reported that a thin GaN interlayer approach has been developed for growth of 340 nm ultraviolet light emitting diodes (UV-LEDs) with significantly improved performance. In this paper, more recent results on the further development of UV-LEDs with shorter wavelengths are reported, and the limitation of the wavelength of the UV-LEDs that can be pushed to, while retaining high device performance using the approach has been investigated. Transmission electron microscopy and device-performance data, including electrical and optical characteristics, indicated that the thin GaN interlayer approach can be effectively employed for growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The approach should be taken into account in growth of UV-LEDs on sapphire substrates, as it provides a simple but effective growth method to achieve UV-LEDs with high performance. This paper also reports that a micro-LED array using the UV-LED wafer has been successfully fabricated, offering versatile micro-structured UV light sources for a wide range of applications.

Quantum dot nano-composites as colour-converters for micro-pixellated gallium nitride light-emitting diodes

We report aligned micro-patterning of quantum dot nanocomposites on gallium nitride micro-pixel light-emitting diode arrays. Mixing colloidal quantum dots in a polymer matrix facilitates dasiadirect writingpsila micro-structuring techniques for high-density pixellated colour-conversion.

Modification of far-field radiation pattern by shaping InGaN/GaN nanorods

In this work, we report on the fabrication of “golftee,” “castle,” and “pillar” shaped InGaN/GaN nanorod light-emitting diode (LED) arrays with a typical rod diameter of 200 nm based on nanoimprint lithography, dry etching, and wet etching. The photoluminescence (PL) integral intensities per active region area for “golftee,” “castle,” and “pillar” shaped nanorod samples were found to be 2.6, 1.9, and 2.2 times stronger than that of a conventional planar LED. Additionally, the far-field radiation patterns of the three different shaped nanorod samples were investigated based on angular resolved PL (ARPL) measurements. It was found that the sharp lobes appeared at certain angles in the ARPL curve of the “golftee” sample, while broad lobes were observed in the ARPL curves of the “castle” and “pillar” samples. Further analysis suggests that the shorter PL lifetime and smaller spectral width of the “golftee” sample were due to the coupling of photon modes with excitons, which also led to the observed high effic...

Fabrication and optical characterization of a flexible colloidal quantum dot laser

We report on the fabrication and characterization of flexible distributed-feedback (DFB) lasers made with CdSe/ZnS colloidal quantum dots. The laser cavity of these lasers is based on a submicron scale pattern replicated from a commercial DVD onto a photocurable flexible polymeric substrate followed by the drop-coating of a quantum dot solution. Typical laser threshold behavior and operation lifetime under ambient conditions are studied. Emission polarization and the effect of the pump polarization on device characteristics are also discussed.