E. J. Friedrich

Optical constants of Cu2ZnGeS4 bulk crystals

The dielectric functions of Cu2ZnGeS4 bulk crystals grown by the Bridgman method were measured over the energy range 1.4 to 4.7 eV at room temperature using variable angle spectroscopic ellipsometry. The observed structures in the dielectric functions were adjusted using the Adachi’s model and attributed to interband transitions E0, E1A, and E1B at Γ:(000), N(A):2π/a(0.5 0.5 0.5), and T(Z):2π/a(0 0 0.5) points of the first Brillouin zone, respectively. The model parameters (threshold energy, strength, and broadening) have been determined using the simulated annealing algorithm. The decrease in the first gap, E0, has been attributed to a higher Ge–S hybridization. The spectral dependence of the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity were also derived.

Dielectric functions and optical constants modeling for CuIn3Se5 and CuIn5Se8

The complex dielectric functions, e(ω)=e1(ω)+ie2(ω), of CuIn3Se5 and CuIn5Se8 crystals with different Cu contents have been determined in the 0.8–4.7 eV photon energy range by using spectroscopic ellipsometry. The spectral dependence of the real, e1(ω), and imaginary, e2(ω), parts of e(ω), as well as the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity, has been modeled by using a modification of Adachi’s model. The results are in excellent agreement with the experimental data over the entire range of photon energies. The model parameters, including the energies corresponding to the lowest direct gap, E0, and to higher critical points, have been determined by using the simulated annealing algorithm.

Optical constants of CuGa5Se8 crystals

Spectral dependence of the real e1(ω) and imaginary e2(ω) parts of the complex dielectric function, complex refractive index, absorption coefficient, and normal-incidence reflectivity of CuGa5Se8 crystals with slightly different Cu contents are modeled using Adachi’s model for interband transitions. The results are in good agreement with the experimental data over the entire range of photon energies. The model parameters are determined using the simulated annealing algorithm.

Long-range structure of Cu(InxGa1−x)3Se5: A complementary neutron and anomalous x-ray diffraction study

Distinguishing the scattering contributions of isoelectronic atomic species by means of conventional x-ray- and/or electron diffraction techniques is a difficult task. Such a problem occurs when determining the crystal structure of compounds containing different types of atoms with equal number of electrons. We propose a new structural model of Cu(InxGa1−x)3Se5 which is valid for the entire compositional range of the CuIn3Se5–CuGa3Se5 solid solution. Our model is based on neutron and anomalous x-ray diffraction experiments. These complementary techniques allow the separation of scattering contributions of the isoelectronic species Cu+ and Ga3+, contributing nearly identically in monoenergetic x-ray diffraction experiments. We have found that CuIII3Se5 (III=In,Ga) in its room temperature near-equilibrium modification exhibits a modified stannite structure (space group I4¯2m). Different occupation factors of the species involved, Cu+, In3+, Ga3+, and vacancies have been found at three different cationic pos...

Analysis of the optical properties of Cu(In1−xGax)3Se5 crystals

Analysis of the optical properties of bulk Cu(In1−xGax)3Se5 mixed crystals synthesized from the elements as a function of the Ga content is presented. Measurements of the complex dielectric function e(ω)=e1(ω)+ie2(ω) were performed at room temperature in the photon energy range of 0.8–4.7 eV using a variable angle of incidence ellipsometer. The spectral dependence of the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity were also derived. The structure observed in the dielectric functions attributed to the interband transitions E0, E1A, and E1B has been modeled using a modification of the Adachi’s model. The results are in excellent agreement with the experimental data over the entire range of photon energies. The model parameters, including the energies corresponding to the lowest direct gap and higher critical points, have been determined using the simulated annealing algorithm. The values of E0 and E1A are found to increase linearly with the increasing Ga content.