E. Linder

Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer

We present site-controlled low density InAs quantum dots grown by molecular beam epitaxy with a template based overgrowth technique allowing enlarged buffer layers upto 55 nm. Growing a seeding layer of InAs quantum dots in etched holes reduces closing of the holes, so that a second layer of InAs quantum dots can be aligned to the holes after a buffer layer overgrowth. Confocal microphotoluminescence measurements show a significant decrease of the low temperature photoluminescence linewidth of the quantum dots to an average value of ∼500 μeV and a minimum width of 460 μeV. This is to be compared to 2 to 4 meV of quantum dots grown on thin buffer layers. This improvement is due to the enlarged distance to residual defects at the overgrown surface.

Effect of an in-plane magnetic field on the photoluminescence spectrum of modulation-doped quantum wells and heterojunctions

The photoluminescence (PL) spectrum of modulation-doped GaAs/AlGaAs quantum wells (MDQW) and heterojunctions (HJ) is studied under a magnetic field (

Excitons in GaAs/AlGaAs quantum wells containing a low density two-dimensional electron gas

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Resonant Raman Scattering in GaAs/AlGaAs Quantum Wells Modulated by Microwave Irradiation and by Electron–Hole Photogeneration

) applied parallel to the two-dimensional electron gas (2DEG) layer. The effect of

Landau levels of bragg confined electrons and holes

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Interacting separately confined two-dimensional electron and hole gases: magnetic field dependence of the circularly polarized photoluminescence

strongly depends on the electron-hole separation (

Trion-electron scattering in GaAs/AlAs quantum wells

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The effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAsAlGaAs quantum wells

), and we revealed remarkable

Interband Transitions In Modulation‐doped GaAs/AlGaAs Heterostructures Under In‐plane Magnetic Field

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Microwave‐Modulated Photoluminescence of a 2D‐electron Gas in a Magnetic Field

-induced modifications of the PL spectra in both types of heterostructures. A model considering the direct optical transitions between the conduction and valence subband that are shifted in k-space under