E. M. F. Vieira

Charge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers

In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS) capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded in a SiO2 matrix grown by RF magnetron sputtering at a low temperature (350 ◦ C). Capacitance–voltage measurements show that the introduction of the SiGe layer leads to a significant enhancement of the charge trapping capabilities, with the memory effect and charge retention time larger for hole carriers. The presented results demonstrate that amorphous floating-gate SiGe layers embedded in SiO2 may constitute a suitable alternative for memory applications. (Some figures may appear in colour only in the online journal)

Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice

In this work, SiGe/SiO2 multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at 350 °C. The influence of the annealing treatment on SiGe nanocrystals (NCs) formation and crystalline properties were investigated by Raman spectroscopy and grazing incidence x-ray diffraction. At the annealing temperature of 800 °C, where well defined SiGe NCs were observed, a thorough structural investigation of the whole ML structure has been undertaken by Rutherford backscattering spectroscopy, grazing incidence small angle x-ray scattering, high resolution transmission electron microscopy, and annular dark field scanning transmission electron microscopy. Our results show that the onset of local modifications to the ML composition takes place at this temperature for annealing times of the order of a few tens of minutes with the formation of defective regions in the upper portion of the ML structure. Only the very first layers over ...

Glycerol/PEDOT:PSS coated woven fabric as a flexible heating element on textiles

A polyamide 6,6 (PA66) fabric pre-treated with a double barrier dielectric (DBD) atmospheric plasma in air was coated with 1 and 5 layers of an intrinsically conducting glycerol-doped PEDOT:PSS polymer (PEDOT:PSS + GLY) with the final objective of developing a cost-competitive and temperature controllable flexible-heating element to be used in clothing encapsulated between an outer and an inner separator layer in order to provide heat-reflecting properties and uniform temperature distribution, respectively. FTIR, DSC, TGA, SEM, EDS, XRD and DMA analyses show significant changes in morphology, chemistry, enthalpy, crystallinity and glass transition temperature confirming that PEDOT:PSS and glycerol are not only spread over the PA66 yarn surfaces but are dispersed in the bulk facilitating relaxation and increasing structure and chain flexibility. Electrochemical and electrical resistivity (ρ) measurements confirm that the plasma treated PA66 coated with 5 layers of PEDOT:PSS + GLY presents the highest stability, resistance and capacitive behaviour, and the best capability of storing electrical energy. This configuration needs only 7.5 V to induce a temperature change up to 38 °C at a current density of 0.3 A g−1. The desired temperature is easily adjustable as a function of the applied voltage and by the number of coated layers of PEDOT:PSS + GLY. Despite the need to improve the uniformity of the coating thickness on the fabric for uniform heat generation, the observed results are quite impressive since they can be compared to the temperature obtained in carbon nanotube composites using similar voltages. This cost-competitive, safe, highly flexible and stable thermoelectric fabric has potential for use in large area textiles as a heating element in a wide range of applications such as garments, carpets, blankets and automotive seats.

A flexible Li-ion battery with design towards electrodes electrical insulation

The application of micro electromechanical systems (MEMS) technology in several consumer electronics leads to the development of micro/nano power sources with high power and MEMS integration possibility. This work presents the fabrication of a flexible solid-state Li-ion battery (LIB) (~2.1 μm thick) with a design towards electrodes electrical insulation, using conventional, low cost and compatible MEMS fabrication processes. Kapton® substrate provides flexibility to the battery. E-beam deposited 300 nm thick Ge anode was coupled with LiCoO2/LiPON (cathode/solid-state electrolyte) in a battery system. LiCoO2 and LiPON films were deposited by RF-sputtering with a power source of 120 W and 100 W, respectively. LiCoO2 film was annealed at 400 °C after deposition. The new design includes Si3N4 and LiPO thin-films, providing electrode electrical insulation and a battery chemical stability safeguard, respectively. Microstructure and battery performance were investigated by scanning electron microscopy, electric resistivity and electrochemical measurements (open circuit potential, charge/discharge cycles and electrochemical impedance spectroscopy). A rechargeable thin-film and lightweight flexible LIB using MEMS processing compatible materials and techniques is reported.

A chemically stable PVD multilayer encapsulation for lithium microbatteries

This work was financially supported by FEDER/COMPETE and FCT funds with the projects PTDC/EEA-ELC/114713/2009, PEST-C/QUI/UI0686/2013 and UID/EEA/04436/2013, first author scholarship SFRH/BD/78217/2011, fourth author scholarship SFRH/BPD/95905/2013, and CRUP AI TC-09_14.

Electrical insulation properties of RF-sputtered LiPON layers towards electrochemical stability of lithium batteries

Electrochemical stability, moderate ionic conductivity and low electronic conductivity make the lithium phosphorous oxynitride (LiPON) electrolyte suitable for micro and nanoscale lithium batteries. The electrical and electrochemical properties of thin-film electrolytes can seriously compromise full battery performance. Here, radio-frequency (RF)-sputtered LiPON thin films were fabricated in nitrogen plasma under different working pressure conditions. With a slight decrease in the deposition pressure from 6 to 1 × 10−3 mbar, the 600 nm thick LiPON film reveals an electric resistivity increase from 108 to 1010 Ω cm, respectively. UV– micro-Raman spectroscopy confirms the nitrogen incorporation on the Li3PO4 material, while scanning electron microscopy, Rutherford backscattering spectrometry and nuclear reaction analysis show a well-defined compact structure with a composition of Li2.2PO2.2N0.6 for the higher electrical-resistivity film. An ionic conductivity close to 3 × 10−7 S cm−1 at room temperature (22 °C) was measured by AC impedance spectroscopy. Thermal properties were investigated through the differential scanning calorimetry technique. LiPON films reveal high optical transmission (>75%) in the UV–vis range, which could be interesting for transparent electronic devices.

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ∼ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ∼ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ∼3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ∼ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

Flexible solid-state Ge – LiCoO2 battery: from materials to device application

This work is supported by FCT with the reference project UID/EEA/04436/2013, by FEDER funds through the COMPETE 2020 – Programa Operacional Competitividade e Internacionalizacao (POCI) with the reference project POCI-01- 0145-FEDER-006941, and by the strategic projects UID/FIS/04650/2013 and PEST – C/QUI/UI0686/2013. EMFV is grateful for financial support through the FCT grant SFRH/BPD/95905/2013.