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Dive into the research topics where E. Nowak is active.

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Featured researches published by E. Nowak.


Journal of Thermal Analysis and Calorimetry | 1988

Trends in the high-temperature heat capacities of ternary chalcopyrite semiconductors

G. Kühn; H. Neumann; E. Nowak

The anharmonic contribution to the heat capacity of any chalcopyrite semiconductor AIBIIIC2VI or AIIBIVC2V is evaluated. It is shown that the degree of lattice anharmonicity decreases with increasing atomic weight of the constituent atoms of the compounds, and there is no essential difference in the degree of lattice anharmonicity of the two groups of compounds. Except for CdGeAs2, the trend in the Grüneisen constants is the same.ZusammenfassungDer anharmonische Beitrag zur Wärmekapazität verschiedener Halbleiterverbindungen AIBIIIC2VI und AIIBIVC2V vom Chalkopyrit-Typ wird bestimmt. Es wird gezeigt, dass die Gitteranharmonizität mit steigender relativer Atommasse der Bestandteile der Verbindungen abnimmt und dass keine wesentlichen Unterschiede in der Gitteranharmonizität beider Gruppen von Verbindungen bestehen. Der Trend der Grüneisen-Konstanten ist der gleiche, ausgenommen bei CdGeAs2.РЕЗЮМЕОценен ангармоничес кий вклад в теплоемко сть халькопиритных полу проводников АIВIIIС2VI и АIIВIVС2V. Показа но, что степень решеточной ангармон ичности уменьшается с увеличением увеличением атомного веса элемен тов, составляющих дан ные соединения, и что для о боих групп соединени й нет особого различия в степени решеточной ангармоничности. Пос тоянные Грюнайзена одинаковые для всех с оединений, за исключе нием CdGeAs2.


Crystal Research and Technology | 1981

Impurity States in CuInSe2

H. Neumann; E. Nowak; G. Kühn


Crystal Research and Technology | 1979

Epitaxial layers of CuInTe2 on GaAs

H. Neumann; E. Nowak; B. Schumann; A. Tempel; G. Kühn


Crystal Research and Technology | 1987

Heat capacity of LiInS2, LiInSe2 and LiInTe2 between 200 and 550 K

G. Kühn; E. Pirl; H. Neumann; E. Nowak


Crystal Research and Technology | 1980

Structural and electrical properties of CuIn0.7Ga0.3Se2 epitaxial layers on GaAs substrates

B. Schumann; H. Neumann; A. Tempel; G. Kühn; E. Nowak


Crystal Research and Technology | 1981

Influence of Substrate Surface Polarity on Epitaxial Layer Growth of CuInSe2 on GaAs

B. Schumann; H. Neumann; E. Nowak; G. Kühn


Crystal Research and Technology | 1983

Electrical properties of AgGaSe2 epitaxial layers

H. Neumann; E. Nowak; B. Schumann; G. Kühn


Crystal Research and Technology | 1983

Influence of source composition on the properties of flash-evaporated thin films in the Cu–In–Se system

H. Neumann; B. Schumann; E. Nowak; A. Tempel; G. Kühn


Crystal Research and Technology | 1989

Hole mobility in heavily Zn‐doped GaAs

E. Nowak; H. Neumann; G. Kühn


Crystal Research and Technology | 1992

On the Chemical Mechanism of the Zinc Diffusion into GaAs from SiO2 Spin‐on Films

E. Nowak; G. Kühn; B. Schumann; R. Hesse; H. Sobotta

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