E. Pernigotti

A readout chip for a 64 x 64 pixel matrix with 15-bit single photon counting

A single Photon Counting pixel detector readout Chip (PCC) has been derived from previous work in the CERN RD19 collaboration for particle physics tracking devices, recently developed for high energy physics experiments. The readout chip is a 64 x 64 matrix of identical 170 {micro}m x 170 {micro}m cells. It is to be bump-bonded to an equally segmented 1 cm{sup 2} matrix of semiconductor sensors, e.g. Si or GaAs. Each readout cell comprises a preamplifier, a discriminator and a 15-bit counter. The input noise is 170 e{sup {minus}} rms. At the lowest nominal threshold of 1,400 e{sup {minus}} (5.1 keV in Si) the cells exhibit a threshold distribution with a spread before adjustment of 350 e{sup {minus}} rms. Each cell has a 5-bit register which allows masking, test-enable and 3-bit individual threshold adjust. After adjustment the threshold spread is reduced to 80 e{sup {minus}} rms. Absolute calibration of the electrically measured equivalent charge can be done once the readout chip is bump-bonded to a detector.

Performance of a 4096-pixel photon counting chip

A 4096 pixel Photon Counting Chip (PCC) has been developed and tested. It is aimed primarily at medical imaging although it can be used for other applications involving particle counting. The readout chip consists of a matrix of 64 by 64 identical square pixels, whose side measures 170 micrometers and is bump-bonded to a similar matrix of GaAs or Si pixel diodes covering a sensitive area of 1.18 cm2. The electronics in each cell comprises a preamplifier, a discriminator with variable threshold and a 3-bit threshold tune as well as a 15-bit counter. Each pixel can be individually addressed for electrical test or masked during acquisition. A shutter allows for switching between the counting and readout modes and the use of static logic in the counter enables long data taking periods. Electrical test of the chip have shown a maximum counting and readout modes and the use of static logic in the counter enables long data taking periods. Electrical test of the chip have shown a maximum counting rate of up to 2 MHz in each pixel. The minimum reachable threshold is 1400 e with a variation of 350 e rms that can be reduced to 80 e rms after tuning with the 3-bit adjustment. Electrical noise at the input is 170 e rms. Several read-out chips have been bump bonded to 200 micrometers thick GaAs pixel detectors. Test with (gamma) -ray and (beta) sources have been carried out. A number of objects have been imaged and a 260 micrometers thick aluminum foil which represents a contrast to the surrounding air of only 1.9 percent has been correctly imaged.

Low contrast imaging with a GaAs pixel digital detector

A digital mammography system based on a GaAs pixel detector has been developed by the INFN (Istituto Nazionale di Fisica Nucleare) collaboration MED46. The high atomic number makes the GaAs a very efficient material for low energy X-ray detection (10-30 keV is the typical energy range used in mammography). Low contrast details can be detected with a significant dose reduction to the patient. The system presented in this paper consists of a 4096 pixel matrix built on a 200 /spl mu/m thick semi-insulating GaAs substrate. The pixel size is 170/spl times/170 /spl mu/m/sup 2/ for a total active area of 1.18 cm/sup 2/. The detector is bump-bonded to a VLSI front-end chip which implements a single-photon counting architecture. This feature allows to enhance the radiographic contrast detection with respect to charge integrating devices. The system has been tested by using a standard mammographic tube. Images of mammographic phantoms will be presented and compared with radiographs obtained with traditional film/screen systems. Monte Carlo simulations have been also performed to evaluate the imaging capability of the system. Comparison with simulations and experimental results will be shown.

A readout chip for a 64/spl times/64 pixel matrix with 15-bit single photon counting

A single photon counting pixel detector readout chip (PCC) has been derived from previous work in the CERN RD19 collaboration for particle physics tracking devices, recently developed for high energy physics experiments. The readout chip is a 64/spl times/64 matrix of identical 170 /spl mu/m/spl times/170 /spl mu/m cells. It is to be bump-bonded to an equally segmented 1 cm/sup 2/ matrix of semiconductor sensors, e.g. Si or GaAs. Each readout cell comprises a preamplifier, a discriminator and a 15-bit counter. The input noise is 170 e/sup -/ rms. At the lowest nominal threshold of 1 400 e/sup -/ (5.1 keV in Si) the cells exhibit a threshold distribution with a spread before adjustment of 350 e/sup -/ rms. Each cell has a 5-bit register which allows masking, test-enable and 3-bit individual threshold adjust. After adjustment the threshold spread is reduced to 80 e/sup -/ rms. Absolute calibration of the electrically measured equivalent charge can be done once the readout chip is bump-bonded to a detector.

GaAs detector optimization for different medical imaging applications

Abstract We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed.

A pixel readout chip for 10-MRad to 30-MRad in standard 0.25-mum CMOS

A radiation tolerant pixel detector readout chip has been developed in a commercial 0.25 /spl mu/m CMOS process. The chip is a matrix of two columns of 65 identical cells. Each readout cell comprises a preamplifier, a shaper filter, a discriminator, a delay line and readout logic. The chip occupies 10 mm/sup 2/, and contains about 50000 transistors. Electronic noise (/spl sim/220 e rms) and threshold dispersion (/spl sim/160 e rms) allow operation at 1500 e average threshold. The radiation tolerance of this mixed mode analog-digital circuit has been enhanced by designing NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. The chip, which was developed at CERN for the ALICE and LHCb experiments, was still operational after receiving 3.6/spl times/10/sup 13/ protons over an area of 2/spl times/2 mm. Other chips were irradiated with X-rays and remained fully functional up to 30 Mrad (SiO/sub 2/) with only minor changes in analog parameters. These results indicate that careful use of deep submicron CMOS technologies can lead to circuits with high radiation tolerance.