E. S. Filatov

Thermal Properties of Some Volatile Titanium (IV) Precursors

The tensimetric study was carried out for TTIP, Ti[OEt]4 and Ti[DMAP]4 by means of static method with a quartz membrane zero-manometer and flow method using He as gas-carrier (the compounds were assumed to vaporize in a monomolecular form) in a wide range of temperatures. Temperature dependencies of saturated vapor pressure were measured; the evaporation thermodynamic parameters have been calculated (Table 1). Data obtained for TTIP can be compared with values calculated from literature data [1, 2].

Pulsed MO CVD Processes of MgO Layer Deposition from Mg(thd)2

There are many works in which MgO layers were obtained by means of MO CVD using various precursors [1]. Success in obtaining high-quality layers is first of all determined by the choice of a proper precursor on the basis of knowledge of its physicochemical properties [2]. In this connection, special attention is paid in the present work to the multi-aspect investigation of thermal characteristics and the processes of decomposition of the classical precursor Mg(thd)2.