Edward C. Niehenke

A low cost miniature MMIC W-band transceiver with planar antenna

This paper presents design and performance of a unique, low cost, miniature planar all MMIC W-band transceiver. The transceiver incorporates a planar 4-element circularly, polarized patch antenna, a monopulse comparator, two receiver channels, one for the sum and the other for a selectable difference in either azimuth or elevation. Two PIN diode switches provide the TR and difference channel switching. Each receiver has a balanced LNA, an image rejection/image enhancement subharmonic mixer and an IF amplifier. Test circuits are included for system calibration and verification. The double sided transceiver uses an optimal arrangement of quartz, alumina, and LTCC for an overall size less than 1 inch diameter and 0.25 inch thick. The antenna cross pole isolation is typically 15 dB with a monopulse null depth of 25 dB. The receiver gain is 30 dB with a 25 dB image rejection.

A planar 94-GHz transceiver with switchable polarization

The design and performance of a low-cost, planar microstrip 94-GHz transceiver is described. It includes a two-axis, monopulse-fed, four-element, switchable, right-hand-left-hand circularly polarized patch antenna. All circuits are monolithic microwave integrated circuits (mixer, intermediate-frequency amplifier, and RF PIN diode switch) interconnected with low-loss, Z-cut quartz microstrip. The miniature 1.1-in-diameter by 0.25-in-thick transceiver operated both in the transmit and in the receive mode with a 3-dB beamwidth of 58 degrees . When mounted as a feed for a 5-in-diameter parabolic dish, the assembly exhibited a 1.7 degrees 3-dB beamwidth, 12-dB sidelobes, a gain of 26 dB, and a difference pattern null of 30 dB.<<ETX>>

A Q-Band MHEMT 100-mW MMIC power amplifier with 46 % power-added efficiency

A Q-band MMIC power amplifier has been designed, processed, and measured with first pass success. Design parameters include 20 dBm power, 25 dB gain, 40 % PAE, input return loss of 10 dB and output return loss of 6 dB across 43.5 to 45.5 GHz. The MMIC design is based on the BAE Systems 0.1 μm MHEMT device, which has high gain and excellent PAE. The two-stage amplifier uses a 2-finger, 75 μm unit gate width, 0.1 μm gate length MHEMT device for the first stage and two 4-finger, 75 μm unit gate width, 0.1 μm gate length MHEMT devices for the output stage. Complete stabilization for both the even and odd mode is provided using feedback and resistors in critical locations of the circuit. The first stage is optimized for gain while the output stage is optimized for power and power-added efficiency (PAE). The complete MMIC amplifier measures 3.5 mm × 1.7 mm complete with dc blocks and dc biasing elements. Measured performance includes record high PAE of 46 % at 44.5 GHz, 24 dB small-signal gain, 1 dB compressed power of 18 dBm, and 3-dB compressed power of 20.5 dBm across the 43.5 to 45.5 GHz frequency band.

A GaAs MMIC PIN diode receiver protector with switchable attenuator

Design and performance of a unique X-band GaAs MMIC PIN diode receiver protector (RP) with switchable attenuator is described with a maximum average and peak leakage levels of 17 dBm and 20 dBm respectively. The fast acting 8 diode RP requires no external biasing and exhibits a recovery time of 50 ns. The MMIC includes a switchable 13 dB attenuator after the RP. Two RP/attenuator circuits for balanced operation are included in a 120 by 150 by 6 mil MMIC which exhibits only 0.55 to 0.7 dB loss, and a return loss of 15 to 30 dB over an octave bandwidth.

The evolution of transistors for power amplifiers: 1947 to today

This paper traces the development of transistors for power amplifiers (PAs). Technological transistor innovations have raised output power levels, the frequency of operation and the efficiency of power amplifiers. Devices to be discussed include the bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), complimentary metal oxide semiconductor (CMOS), laterally diffused metal oxide semiconductor (LDMOS), metal-semiconductor field effect transistor (MESFET), high electron mobility transistor (HEMT), and pseudomorphic high electron transistor (PHEMT). Semiconductors for PAs include Silicon (Si), Gallium Arsenide (GaAs), Indium Phosphide (InP), and Gallium Nitride (GaN) and the various heterojunctions of these semiconductors.

An Environmentalized Low-Noise Parametric Amplifier

A 14 oz, low noise, X-band parametric amplifier has been developed for an airborne environment (-55/spl deg/ to +71 /spl deg/C). This unit exhibits a 1.8 dB noise figure at 10 GHz and, at 18 dB peak gain, a 3 dB single-tuned bandwidth of 230 MHz that is electronically tunable over 700 MHz. A 1 dB gain compression occurs at -27 dBm input power. Performance is achieved through use of unique upper sideband terminated circuitry and a new low-parasitic, hermetic varactor package.