Edward Lochocki

Polycrystalline Graphene with Single Crystalline Electronic Structure

We report the scalable growth of aligned graphene and hexagonal boron nitride on commercial copper foils, where each film originates from multiple nucleations yet exhibits a single orientation. Thorough characterization of our graphene reveals uniform crystallographic and electronic structures on length scales ranging from nanometers to tens of centimeters. As we demonstrate with artificial twisted graphene bilayers, these inexpensive and versatile films are ideal building blocks for large-scale layered heterostructures with angle-tunable optoelectronic properties.

Piezoresponse force microscopy of domains and walls in multiferroic HoMnO3

We report ambient piezoresponse force microscopy (PFM) studies of the multiferroic hexagonal manganite HoMnO3 performed on the cleaved (110) surface of a single-crystal specimen. By changing the sample orientation with respect to the cantilever, we observed an unexpected out-of-plane PFM signal at domain walls, which depends on domain wall orientation, in addition to the expected in-plane PFM signal in domains. Further studies confirmed that the domain wall PFM signal results from an out-of-plane displacement, which can be explained by a simple model of local elastic response with the conservation of unit cell volume at head-on domain walls.

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the high concentration (1.2x10^11 cm^-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden Popper crystallographic shear faults. This suggests that in addition to threading dislocations that other defects possibly (BaO)2 crystallographic shear defects or point defects significantly reduce the electron mobility.

Hierarchical spin-orbital polarization of a giant Rashba system

Angle-resolved photoemission reveals the emergence of complex orbital texture concomitant with spin splitting in the Rashba compound BiTeI. The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent splitting of a single initially spin-degenerate band into two branches with opposite spin polarization. Combining polarization-dependent and resonant angle-resolved photoemission measurements with density functional theory calculations, we show that the two “spin-split” branches of the model giant Rashba system BiTeI additionally develop disparate orbital textures, each of which is coupled to a distinct spin configuration. This necessitates a reinterpretation of spin splitting in Rashba-like systems and opens new possibilities for controlling spin polarization through the orbital sector.

MBE growth of few-layer 2H-MoTe 2 on 3D substrates

Abstract MoTe2 is the least explored material in the Molybdenum-chalcogen family. Molecular beam epitaxy (MBE) provides a unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. We find that for a few-layer MoTe2 grown at a moderate rate of ∼6 min per monolayer, a narrow window in temperature (above Te cell temperature) and Te:Mo ratio exists, where we can obtain pure phase 2H-MoTe2. This is confirmed using reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). For growth on CaF2, Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of ∼90 A and presence of twinned grains. In this work, we hypothesis the presence of excess Te incorporation in MBE grown few layer 2H-MoTe2. For film on CaF2, it is based on >2 Te:Mo stoichiometry using XPS as well as ‘a’ and ‘c’ lattice spacing greater than bulk 2H-MoTe2. On GaAs, its based on observations of Te crystallite formation on film surface, 2 × 2 superstructure observed in RHEED and low energy electron diffraction, larger than bulk c-lattice spacing as well as the lack of electrical conductivity modulation by field effect. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively.

Band offset and electron affinity of MBE-grown SnSe2

SnSe2 is currently considered a potential two-dimensional material that can form a near-broken gap heterojunction in a tunnel field-effect transistor due to its large electron affinity which is experimentally confirmed in this letter. With the results from internal photoemission and angle-resolved photoemission spectroscopy performed on Al/Al2O3/SnSe2/GaAs and SnSe2/GaAs test structures where SnSe2 is grown on GaAs by molecular beam epitaxy, we ascertain a (5.2 ± 0.1) eV electron affinity of SnSe2. The band offset from the SnSe2 Fermi level to the Al2O3 conduction band minimum is found to be (3.3 ± 0.05) eV and SnSe2 is seen to have a high level of intrinsic electron (n-type) doping with the Fermi level positioned at about 0.2 eV above its conduction band minimum. It is concluded that the electron affinity of SnSe2 is larger than that of most semiconductors and can be combined with other appropriate semiconductors to form near broken-gap heterojunctions for the tunnel field-effect transistor that can pote...

Controlling surface carrier density by illumination in the transparent conductor La-doped BaSnO3

LaxBa1-xSnO3 is a promising transparent conducting oxide whose high mobility facilitates potential applications in transparent electronics, oxide electronics, and power electronics. Here, we report quantitative comparisons between angle-resolved photoemission and density functional theory, demonstrating a close agreement between calculations and the measured bulk electronic structure. Further measurements reveal upward band bending at the film-vacuum interface, while ultraviolet (UV) exposure is found to increase the surface electron density, similar to other oxides. These results elucidate the LaxBa1-xSnO3 (LBSO) interfacial electronic structure and offer a route for UV carrier density control, critical steps towards realizing LBSO-based electronic devices.LaxBa1-xSnO3 is a promising transparent conducting oxide whose high mobility facilitates potential applications in transparent electronics, oxide electronics, and power electronics. Here, we report quantitative comparisons between angle-resolved photoemission and density functional theory, demonstrating a close agreement between calculations and the measured bulk electronic structure. Further measurements reveal upward band bending at the film-vacuum interface, while ultraviolet (UV) exposure is found to increase the surface electron density, similar to other oxides. These results elucidate the LaxBa1-xSnO3 (LBSO) interfacial electronic structure and offer a route for UV carrier density control, critical steps towards realizing LBSO-based electronic devices.

Underpinning data : Hierarchical spin-orbital polarisation of a giant Rashba system

This work was supported by the Engineering and Physical Sciences Research Council, UK (grant nos. EP/I031014/1 and EP/M023427/1), the Ministry of Science and Technology in Taiwan (project no. MOST-102-2119-M-002-004), NSF (grant nos. DMR-0847385, DMR-1120296, and DMR-1056441), the Office of Naval Research (grant no. N00014-12-1-0791), and TRF-SUT Grant RSA5680052. P.D.C.K. acknowledges support from the Royal Society through a University Research Fellowship. H.I.W. acknowledges support from the NSF IGERT (Integrative Graduate Education and Research Traineeship) program (DGE-0903653) and the NSF Graduate Research Fellowship under grant no. DGE-1144153. L.B. and J.M.R. acknowledge studentship funding from EPSRC through grant nos. EP/G03673X/1 and EP/L505079/1, respectively. Date of acceptance: 16/06/2015