Efthymios Rouvalis

Traveling-wave Uni-Traveling Carrier photodiodes for continuous wave THz generation.

The design, experimental evaluation and performance of a Traveling-Wave Uni-Traveling Carrier photodiode for Terahertz generation are described and its advantages in terms of frequency response are demonstrated. The device delivered 148 microW at 457 GHz, 24 microW at 914 GHz when integrated with resonant antennas and 105 microW at 255 GHz, 30 microW at 408 GHz, 16 microW at 510 GHz and 10 microW at 612 GHz. Record levels of Terahertz figure of merit (PTHz/Popt2 in W(-1)) were achieved ranging from 1 W(-1) at 110 GHz to 0.0024 W(-1) at 914 GHz.

Continuous Wave Terahertz Generation From Ultra-Fast InP-Based Photodiodes

We present theoretical analysis and experimental results for an optimized Traveling Wave Uni-Traveling Carrier Photodiode for continuous wave millimeter-wave and Terahertz generation. The devices employed a mode-converting waveguide for efficient coupling from a lensed fiber. A DC responsivity of 0.53 A/W at a wavelength of 1.55 μm and 3-dB electrical bandwidth of 108 GHz were obtained from temperature-controlled coplanar waveguide-integrated devices together with record levels of power from a photomixer in the millimeter-wave range with 1 mW at 200 GHz. High levels of Terahertz output power from broadband, heat sink-mounted antenna-integrated devices were measured with 5 μW at 1.02 THz.

146-GHz millimeter-wave radio-over-fiber photonic wireless transmission system

The broadband penetration and continuing growth of Internet traffic among residential and business customers are driving the migration of todays end users network access from cable to optical fiber and superbroadband wireless systems The integration of optical and wireless systems operating at much higher carrier frequencies in the millimeter-wave (mm-wave) range is considered to be one of the most promising solutions for increasing the existing capacity and mobility, as well as decreasing the costs in next-generation optical access networks. In this paper, several key enabling technologies for very high throughput wireless-over-fiber networks are reviewed, including photonic mm-wave generation based on external modulation or nonlinear effects, spectrum-efficient multicarrier orthogonal frequency-division multiplexing and single-carrier multilevel signal modulation. We also demonstrated some applications in wireless-over-fiber trials using these enabling techniques. The results show that the integrated systems are practical solutions to offer very high throughput wireless to end users in optically enabled wireless access networks.We report the experimental implementation of a wireless transmission system with a 146-GHz carrier frequency which is generated by optical heterodyning the two modes from a monolithically integrated quantum dash dual-DFB source. The monolithic structure of the device and the inherent low noise characteristics of quantum dash gain material allow us to demonstrate the transmission of a 1 Gbps ON-OFF keyed data signal with the two wavelengths in a free-running state at 146-GHz carrier wave frequency. The tuning range of the device fully covers the W-band (75 - 110 GHz) and the F-band (90 - 140 GHz).

95 GHz millimeter wave signal generation using an arrayed waveguide grating dual wavelength semiconductor laser

We report the generation of a 95 GHz carrier frequency by optical heterodyning of two wavelengths from adjacent channels from an arrayed waveguide grating-based multiwavelength laser. The extended cavity structure of the device provides low phase noise and narrow optical linewidth, further enhanced by the intracavity filter effect of the arrayed waveguide grating. We demonstrate that the generated RF beat note, at 95 GHz, has a -3  dB linewidth of 250 kHz. To the best of our knowledge, this is the narrowest RF linewidth generated from a free-running dual-wavelength semiconductor laser. The device is realized as a photonic integrated circuit using active-passive integration technology, and fabricated on a multiproject wafer run, constituting a novel approach for a compact, low-cost dual-wavelength heterodyne source.

High-speed photodiodes for InP-based photonic integrated circuits

We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).

High-Power and High-Linearity Photodetector Modules for Microwave Photonic Applications

We demonstrate hermetically packaged InGaAs/InP photodetector modules for high performance microwave photonic applications. The devices employ an advanced photodiode epitaxial layer known as the modified uni-traveling carrier photodiode (MUTC-PD) with superior performance in terms of output power and saturation. To further improve the thermal limitations, the MUTC-PDs were flip-chip bonded on high thermal conductivity substrates such as Aluminum Nitride (AlN) and Diamond. Modules using chips with active area diameters of 40, 28, and 20 μm were developed. The modules demonstrated a 3-dB bandwidth ranging from 17 GHz up to 30 GHz. In continuous wave mode of operation, very high RF output power was achieved with 25 dBm at 10 GHz, 22 dBm at 20 GHz, and 17 dBm at 30 GHz. In addition, the linearity of the modules was characterized by using the third order intercept point (OIP3) as a figure of merit. Very high values of OIP3 were obtained with 30 dBm at 10 GHz, 25 dBm at 20 GHz and more than 20 dBm at 30 GHz. Under short pulse illumination conditions and by selectively filtering the 10 GHz frequency component only, a saturated power of >21 dBm was also measured. A very low AM-to-PM conversion coefficient was measured, making the modules highly suitable for integration in photonic systems for ultralow phase noise RF signal generation.

Optoelectronic detection of millimetre-wave signals with travelling-wave uni-travelling carrier photodiodes

Optically pumped mixing in travelling-wave uni-travelling carrier photodiodes is proposed as a novel technique for detecting millimetre-wave signals. An experimental demonstration was performed at a frequency of 100 GHz. From DC measurements, an increase in the responsivity was found at high levels of optical power. The mixing mechanism is attributed to the variation of the responsivity with the applied reverse bias and the optical input power. The maximum intermediate frequency power was found to be -35 dBm for a 4 dBm radio frequency power, while an average conversion loss of 40 dB was achieved. A wide dynamic range of more than 42 dB was measured, limited by the maximum available millimetre-wave power.

Millimeter-Wave Optoelectronic Mixers Based on Uni-Traveling Carrier Photodiodes

We present a novel technique for optoelectronic frequency down-conversion of millimeter-wave signals generated from photomixers. The mixing element proposed here is a uni-traveling carrier (UTC) photodiode employing a traveling wave design, originally fabricated for the generation of millimeter-wave signals. For fundamental mixing at a frequency of 100 GHz, a conversion gain of was measured, representing a significant improvement on previously published results. When the device was operated as a subharmonic mixer, an additional loss of 20, 27, and 39 dB was measured for second-, third- and fourth-harmonic mixing, respectively, for the same level of RF input power (0 dBm). A nonlinear dependence of the IF signal on the optically generated signal was measured. From subharmonic mixing measurements, a flat intermediate frequency (IF) response was found over a wide range of frequencies, limited mainly by the IF electronic components.

170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits

We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy

We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.