Elizaveta Semenova

Thermodynamic analysis of the MBE growth of GaInAsN

A thermodynamic approach to analysis of the growth of InGaAsN compounds by molecular beam epitaxy (MBE) is proposed. The developed thermodynamic model allows estimation of the mole fraction of nitrogen in the obtained alloys as a function of external growth parameters: element fluxes and growth temperature. The model predicts that the nitrogen incorporation is temperature-independent below 500??C and markedly diminishes at higher growth temperatures. The incorporation of nitrogen is suppressed on raising the arsenic flux; the content of group?III elements in the alloy affects the nitrogen incorporation only slightly. The results of simulation are compared with experimental data on MBE-grown InGaAsN alloys with small nitrogen content (<3%).

Efficient frequency comb generation in AlGaAs-on-insulator

The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm is obtained. Our demonstration shows the huge potential of the AlGaAs-on-insulator platform in integrated nonlinear photonics.The combination of nonlinear and integrated photonics enables Kerr frequency comb generation in stable chip-based micro-resonators. Such a comb system will revolutionize applications, including multi-wavelength lasers, metrology, and spectroscopy. Aluminum gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths with an ultra-high device nonlinearity. We show high-quality-factor (Q>105) micro-resonators where optical parametric oscillations are achieved with milliwatt-level pump threshold powers, which paves the way for on-chip pumped comb generation.

Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4% ± 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.

Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers

We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference laser structure, our laser with asymmetric barrier layers demonstrates reduced internal optical loss, lower threshold current density at elevated temperatures, and higher characteristic temperature (143 vs. 99 K at 20 °C).

Threshold Characteristics of Slow-Light Photonic Crystal Lasers.

The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a minimum value for a specific cavity length. The experimental results are explained by an analytical theory for the laser threshold that takes into account the effects of slow light and random disorder due to unavoidable fabrication imperfections. Longer lasers are found to operate deeper into the slow-light region, leading to a trade-off between slow-light induced reduction of the mirror loss and slow-light enhancement of disorder-induced losses.

Demonstration of a self-pulsing photonic crystal Fano laser

Fano interference and nonlinearity are exploited to achieve self-pulsing of a laser at gigahertz frequencies. The semiconductor lasers in use today rely on various types of cavity, making use of Fresnel reflection at a cleaved facet1, total internal reflection between two different media2, Bragg reflection from a periodic stack of layers3,4,5,6,7,8, mode coupling in a high contrast grating9,10 or random scattering in a disordered medium11. Here, we demonstrate an ultrasmall laser with a mirror, which is based on Fano interference between a continuum of waveguide modes and the discrete resonance of a nanocavity. The rich physics of Fano resonances12 has recently been explored in a number of different photonic and plasmonic systems13,14. The Fano resonance leads to unique laser characteristics. In particular, because the Fano mirror is very narrowband compared to conventional laser mirrors, the laser is single mode and can be modulated via the mirror. We show, experimentally and theoretically, that nonlinearities in the mirror may even promote the generation of a self-sustained train of pulses at gigahertz frequencies, an effect that has previously been observed only in macroscopic lasers15,16,17,18. Such a source is of interest for a number of applications within integrated photonics.

Slow-light-enhanced gain in active photonic crystal waveguides

Passive photonic crystals have been shown to exhibit a multitude of interesting phenomena, including slow-light propagation in line-defect waveguides. It was suggested that by incorporating an active material in the waveguide, slow light could be used to enhance the effective gain of the material, which would have interesting application prospects, for example enabling ultra-compact optical amplifiers for integration in photonic chips. Here we experimentally investigate the gain of a photonic crystal membrane structure with embedded quantum wells. We find that by solely changing the photonic crystal structural parameters, the maximum value of the gain coefficient can be increased compared with a ridge waveguide structure and at the same time the spectral position of the peak gain be controlled. The experimental results are in qualitative agreement with theory and show that gain values similar to those realized in state-of-the-art semiconductor optical amplifiers should be attainable in compact photonic integrated amplifiers.

Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 μm by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 μm wavelength range is demonstrated.

Low-loss high-confinement waveguides and microring resonators in AlGaAs-on-insulator

AlGaAs is a promising material for integrated nonlinear photonics due to its intrinsic high nonlinearity. However, the challenging fabrication of deep etched AlGaAs devices makes it difficult to realize high-performance devices such as low-loss dispersion engineered waveguides and high-quality microring resonators. Here, we report a process to make high-quality AlGaAs-on-insulator (AlGaAsOI) wafers where high confinement waveguides can be realized. Using optimized patterning processes, we fabricated AlGaAsOI waveguides with propagation losses as low as 1 dB/cm and microring resonators with quality factors up to 350,000 at telecom wavelengths. Our demonstration opens new prospects for AlGaAs devices in integrated nonlinear photonics.

41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

This paper reports recent results on InAs/InP quantum dash–based, two-section, passively mode-locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 μm at 20 °C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 mA. Their output pulses are significantly chirped. The 41-GHz laser exhibits 7 ps pulses after propagation in 60 m of a single-mode fiber. The 10.6-GHz laser generates one picosecond pulses with 545 m of a single-mode fiber. Its single side-band phase noise does not exceed –80 dBc/Hz at 100 kHz offset, leading to an average timing jitter of 800 fs.