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Dive into the research topics where Encarnación G. Víllora is active.

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Featured researches published by Encarnación G. Víllora.


Integrated Optoelectronic Devices 2005 | 2005

A promising new UV/VUV nonlinear optical crystal: SrAlF 5

Kiyoshi Shimamura; Encarnación G. Víllora; Kenichi Muramatsu; Hideo Kimura; Kenji Kitamura; Noboru Ichinose

! x16x1a x0e#x16 x18


Physics and simulation of optoelectronic devices. Conference | 2005

Growth and characterization of beta-Ga 2 O 3 single crystals as transparent conductive substrates for GaN (Invited Paper)

Kiyoshi Shimamura; Encarnación G. Víllora; Kazuo Aoki; Noboru Ichinose

%&%


Journal of Crystal Growth | 2004

Large-size β-Ga2O3 single crystals and wafers

Encarnación G. Víllora; Kiyoshi Shimamura; Yukio Yoshikawa; Kazuo Aoki; Noboru Ichinose

x1c( x16x1a )*+,%--.+ / 0 x0e1x1c*x0e 2 0x12 +%+-%+ 3 x1a 4 * x0e 4 (


Journal of Crystal Growth | 2004

Growth and scintillation characteristics of CeF3, PrF3 and NdF3 single crystals

Kiyoshi Shimamura; Encarnación G. Víllora; Satoshi Nakakita; Martin Nikl; Noboru Ichinose


Archive | 2004

β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method

Noboru Ichinose; Kiyoshi Shimamura; Kazuo Aoki; Encarnación G. Víllora

&%-&


Journal of Crystal Growth | 2005

Advantageous growth characteristics and properties of SrAlF5 compared with BaMgF4 for UV/VUV nonlinear optical applications

Kiyoshi Shimamura; Encarnación G. Víllora; Kenichi Muramatsu; Noboru Ichinose

& / 0 x0e1x17 x18x16 x15 x0e4x0ex16x16 x0e4 5 x1d x18 x1c x18x0e x15 x1ex0ex18x18x18x166 x17 x18x16 x15 x0fx16x0ex0fx16 +%


Archive | 2005

Method for controlling conductivity of ga2o3 single crystal

Noboru Ichinose; Kiyoshi Shimamura; Kazuo Aoki; Encarnación G. Víllora

%+ x16x0e4x16x0e )*x1d 7-.%--89 / 0 x0e1 x1a# x0ex0fx16x1ax17 x18x16 x15 5 x1d x18 x1c x18x0e x15 x1ex0ex18x18x18x166 x17 x18x16 x15x0fx16x0ex0fx16 +%+ x1c * )*x1d 7-.%--88 / 0 x0e x0e x0fx0f x10 x11 x12 x13x14x11x15 x11 x16 x11 x0e x17 x0e x0e x18x0fx0e x10 x19x1ax15x1b x18 x0f x1c x1dx1dx18 x1dx11x1c x11 x1cx11 x0e x0f x16x10 x13x14x11x15x1ex17 x1d x1f ! x1d x0e x1dx10 x11 # x0e


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2005

Scintillation properties of REF3 (RE=Ce, Pr, Nd) single crystals

Encarnación G. Víllora; Kiyoshi Shimamura; Satoshi Nakakita; Martin Nikl; Noboru Ichinose

% x18& x0f x11x11 x17 x1cx0e x10 x19x1ax15x1b x10 x11 x10 x13x14x11x15 x1c x0e x0e x17x16 x1c x11 x10 x0f x1d x0f x11 x12 x16 x11 x0fx1b x0f x11 x10 x13x14x11x15 x18x0f x19x1ax15x10 x11 x12 x10x11x11 x11 x0e x11 x1dx11x1c x11 x1cx11 x17x16 (x1d x0f x18 x1e)*x1a# (x1d x0f x0ex1dx1bx13x14x11x15&x17 x0e x0ex10 x0f x16x11 + x1c AE x18 x11(x1dx12 x0ex1d , x11 x1d& x0e x18x11x11 x11 AE x0ex17 , x11 x10x19x1ax15x1b x10 x1c x0e, x10 x13x14x11x15x10x18 x1dx11x1c x11 x10x0e x1cx11 x18 x1dx0ex17x16x18 x18x1dx18x0ex1c x18 x0ex1bx13x11x11x18 x0e-x1d AE x17 x0ex10x18. x1dx1c x10 x0e x16 x0e,x0e x16 x10 x1c x0e &x0e x0f x0ex10. x0e )*x1a x18x0e x10x1d x10 x1cx11x1b x0f x11 x0f x0e x16 x10


Journal of Crystal Growth | 2004

Reconstruction of the β-Ga2O3 (1 0 0) cleavage surface to hexagonal GaN after NH3 nitridation

Encarnación G. Víllora; Kiyoshi Shimamura; Kazuo Aoki; Noboru Ichinose

x1f/ x18 x1301 x10x18 /23 x18 4x18x1bx13x14x11x15&x19x1ax15& x1d x0e& x11 x16 x11& )*x1a& x10 x1c x0e,& x10 x11 x14x11x11 x11 x0e x11 x1ex14x13x135#x18 x10x18 x10x0ex1e67#x1dx11x1c x11x1e89#x1cx17 x11x11 x17x11 x0e x1c x0f x0e x0e x1bx13 x0e& x0e x0e x10x1d x18 x11 x12x0e x17x16 x17 x10 x0f x18 x1ex19*x1a# x10 , x0e x11 x16 x11 x1d x19x19:x1ex19x19:#& - 5 x19x1e-5x19:#& 5 x19x1e5x19:#x0e 5 x19:x1b x16 x11& x1c& x17 x1d x0e x11x16 x10 x11 ; x18& x0e x0e x17x11


Archive | 2005

Ga2O3 semiconductor device

Noboru Ichinose; Kiyoshi Shimamura; Kazuo Aoki; Encarnación G. Víllora

x1bx14 x0f & , x18 x11 & x18x11x16 989& x11 x11 x11 *x16 x1cx11=+ x19*x1a x1cx11 & x18x0e x18x0f x17x11 x0ex18 x1ex1301# 89>989x1bx14 x0fx0f & (x1d x0f x18 x1e)*x1a#& x11x11x16 x11x0ex16 x0fx0e x0e 3 ? & x17 x0ex1cx11x0f x0e x17 x10 x1f ? x1bx19x16 x18 x0e& x10(x1d x16 x1c x17 x0e x17x16 x1d x10 x10 x11 x16 x11& x17 x0f x0e x11x11x16 x0f x11x0e x1e**# x18 x0e x0ex18 x1bx1301 x17x16)*x1a x17 x11x11= x16 x11 & x1d 5 @x17: 5 :x1b x16 x11 & x1c& x11 x17 x1d x0e 89>989 x1cx11 & x1d+ x11 x11 89 // x0e ;2 x18& x0f x1cx11x16x1bx0ex0fx10 x11x12x13 x10x11 x14x15x0fx15x16x14x15x0fx15x17x18 x19x12 x1ax1bx1cx12x10x15x1dx13x1e x1fx19x13 ! x0e#x16

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Kazuo Aoki

National Institute for Materials Science

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Hideo Kimura

National Institute for Materials Science

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Kenji Kitamura

National Institute for Materials Science

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