Er-Ping Li

Analysis of sub-wavelength light propagation through long double-chain nanowires with funnel feeding

The surface integral equation (SIE) method is utilized to characterize plasmonic waveguide made of two parallel chains of silver nanowires with radius of 25nm fed by a V-shaped funnel at a working wavelength of 600nm. The efficiency of energy transport along the waveguide due to surface plasmonic coupling is investigated for different dimensions and shapes. The opening angle of the V-shaped funnel region for optimum light capturing is included in the investigation as well. A long plasmonic double-chain waveguide of length ~3.3mum has been analyzed and optimized.

Volume integral equation analysis of surface plasmon resonance of nanoparticles

The interactions between electromagnetic field and arbitrarily shaped metallic nanoparticles are numerically investigated. The scattering and near field intensity of nanoparticles are characterized by using volume integral equation which is formulated by considering the total electric field, i.e. the sum of incident fields and radiated fields by equivalent electric volume currents, within the scatterers. The resultant volume integral equation is then discretized using divergence-conforming vector basis functions and is subsequently solved numerically. Numerical examples are presented to demonstrate the application of volume integral equation to capture and analyze the surface plasmon resonance of arbitrarily shaped metallic nanoparticles. The effects of illumination angles and background media to the surface plasmon resonance are also investigated. The results show that our proposed method is particularly useful and accurate in characterizing the surface plasmon properties of metallic nanoparticles.

Plasmonic Nanoelectronics and Sensing

1. Fundamentals of plasmonics Yuriy A. Akimov 2. Plasmonic properties of metal nanostructures Yuriy A. Akimov 3. Frequency domain methods for modeling plasmonics Zhengtong Liu 4. Time domain simulation for plasmonic devices Iftikhar Ahmed, Eng-Huat Khoo and Er-Ping Li 5. Passive plasmonic waveguide-based devices Hong-Son Chu and Er-Ping Li 6. Silicon-based active plasmonic devices for on-chip integration Shiyang Zhu, Patrick Lo and Dim-Lee Kwong 7. Plasmonics for sensing applications Wu Lin and Bai Ping.

Plasmonic Nanoelectronics and Sensing: Silicon-based active plasmonic devices for on-chip integration

Photonic devices integrated in Si optoelectronic circuits offer less power dissipation and larger bandwidth than those of electronic components, but suffer from a larger footprint due to the fundamental diffraction limit of light in dielectric waveguides and the weak optical response of Si. These two limitations may be overcome by utilizing plasmonics owing to the tight optical mode confinement in plasmonic waveguides. Besides the capability of miniaturization of photonic devices on the nanometer scale, plasmonics also provides the potential to design novel photonic devices due to the incorporation of metal and dielectrics. In this chapter, we present Si-based active plasmonic devices developed in our laboratory, including modulators and detectors. These active plasmonic devices can be seamlessly integrated into existing Si optoelectronic circuits using standard CMOS technology. Introduction Silicon photonics, in which photonic devices are fabricated on silicon-on-insulator (SOI) platforms using mature CMOS technology, has been well developed recently for high-performance Si electronic-photonic integration circuits (EPICs) [1]. In particular, integrated Si modulators and Ge-on-Si detectors with performances competitive with those of their counterparts based on III–V semiconductors have been demonstrated [2, 3]. However, due to the fundamental diffractive limit of light in dielectric waveguides as well as the weak optical response of Si, the Si photonic devices suffer from large footprints. For example, Mach–Zehnder-based Si modulators, which are mostly implemented in Si EPICs, require a millimeter–scale length to reach π phase shift.

Plasmonic Nanoelectronics and Sensing: Contents

1. Fundamentals of plasmonics Yuriy A. Akimov 2. Plasmonic properties of metal nanostructures Yuriy A. Akimov 3. Frequency domain methods for modeling plasmonics Zhengtong Liu 4. Time domain simulation for plasmonic devices Iftikhar Ahmed, Eng-Huat Khoo and Er-Ping Li 5. Passive plasmonic waveguide-based devices Hong-Son Chu and Er-Ping Li 6. Silicon-based active plasmonic devices for on-chip integration Shiyang Zhu, Patrick Lo and Dim-Lee Kwong 7. Plasmonics for sensing applications Wu Lin and Bai Ping.

Plasmonic Nanoelectronics and Sensing: Index

1. Fundamentals of plasmonics Yuriy A. Akimov 2. Plasmonic properties of metal nanostructures Yuriy A. Akimov 3. Frequency domain methods for modeling plasmonics Zhengtong Liu 4. Time domain simulation for plasmonic devices Iftikhar Ahmed, Eng-Huat Khoo and Er-Ping Li 5. Passive plasmonic waveguide-based devices Hong-Son Chu and Er-Ping Li 6. Silicon-based active plasmonic devices for on-chip integration Shiyang Zhu, Patrick Lo and Dim-Lee Kwong 7. Plasmonics for sensing applications Wu Lin and Bai Ping.