Eran Maniv

Anomalous Magnetic Ground State in an LaAlO 3 / SrTiO 3 Interface Probed by Transport through Nanowires

Resistance as a function of temperature down to 20 mK and magnetic fields up to 18 T for various carrier concentrations is measured for nanowires made from the SrTiO3/LaAlO3 interface using a hard mask shadow deposition technique. The narrow width of the wires (of the order of 50 nm) allows us to separate out the magnetic effects from the dominant superconducting ones at low magnetic fields. At this regime hysteresis loops are observed along with the superconducting transition. From our data analysis, we find that the magnetic order probed by the giant magnetoresistance effect vanishes at TCurie=954±20  mK. This order is not a simple ferromagnetic state but consists of domains with opposite magnetization having a preferred in-plane orientation.

Six-fold crystalline anisotropic magnetoresistance in the (111) LaAlO3/SrTiO3 oxide interface

We measured the magnetoresistance of the 2D electron liquid formed at the (111) LaAlO

Link between the Superconducting Dome and Spin-Orbit Interaction in the (111) LaAlO3/SrTiO3 Interface

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Tunneling into a quantum confinement created by a single-step nanolithography of conducting oxide interfaces

/SrTiO

Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces

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Link between the superconducting dome and spin-orbit interaction in the (111) LaAlO 3 /SrTiO 3 interface

interface. The hexagonal symmetry of the interface is manifested in a six-fold crystalline component appearing in the anisotropic magnetoresistance (AMR) and planar Hall data, which agree well with symmetry analysis we performed. The six-fold component increases with carrier concentration, reaching 15% of the total AMR signal. Our results suggest the coupling between higher itinerant electronic bands and the crystal as the origin of this effect and demonstrate that the (111) oxide interface is a unique hexagonal system with tunable magnetocrystalline effects.

Correlation-Induced Band Competition in SrTiO3/LaAlO3

We measure the gate voltage (V_{g}) dependence of the superconducting properties and the spin-orbit interaction in the (111)-oriented LaAlO_{3}/SrTiO_{3} interface. Superconductivity is observed in a dome-shaped region in the carrier density-temperature phase diagram with the maxima of superconducting transition temperature T_{c} and the upper critical fields lying at the same V_{g}. The spin-orbit interaction determined from the superconducting parameters and confirmed by weak-antilocalization measurements follows the same gate voltage dependence as T_{c}. The correlation between the superconductivity and spin-orbit interaction as well as the enhancement of the parallel upper critical field, well beyond the Chandrasekhar-Clogston limit, suggest that superconductivity and the spin-orbit interaction are linked in a nontrivial fashion. We propose possible scenarios to explain this unconventional behavior.

Tunneling into a quantum confinement created by a single-step nano-lithography of conducting oxide interfaces

A new nano-lithography technique compatible with conducting oxide interfaces, which requires a single lithographic step with no additional amorphous layer deposition or etching, is presented. It is demonstrated on SrTiO3/LaAlO3 interface where a constriction is patterned in the electron liquid. We find that an additional back-gating can further confine the electron liquid into an isolated island. Conductance and differential conductance measurements show resonant tunneling through the island. The data at various temperatures and magnetic fields are analyzed and the effective island size is found to be of the order of 10nm. The magnetic field dependence suggests absence of spin degeneracy in the island. Our method is suitable for creating superconducting and oxideinterface based electronic devices.

Anisotropic magnetoresistance in LaAlO

Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory components. In order to avoid charge traps that may hamper the operation of such devices, it is critical for the layers to be atomically-sharp. Fabrication of atomically sharp interfaces normally requires ultra-high vacuum techniques and high substrate temperatures. We present here a new self-limiting wet chemical process for deposition of epitaxial layers from alkoxide precursors. This method is fast, cheap, and yields perfect interfaces as we validate by various analysis techniques. It allows the design of heterostructures with half-unit cell resolution. We demonstrate our method by designing hole-type oxide interfaces SrTiO3/BaO/LaAlO3. We show that transport through this interface exhibits properties of mixed electron-hole contributions with hole mobility exceeding that of electrons. Our method and results are an important step forward towards a controllable design of a p-type oxide interface.