Eri Uesugi

Electric double-layer capacitance between an ionic liquid and few-layer graphene

Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance Cg. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance CEDL between the ionic liquid and graphene involves the series connection of Cg and the quantum capacitance Cq, which is proportional to the density of states. We investigated the variables that determine CEDL at the molecular level by varying the number of graphene layers n and thereby optimising Cq. The CEDL value is governed by Cq at n < 4, and by Cg at n > 4. This transition with n indicates a composite nature for CEDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor.

Edge-Dependent Transport Properties in Graphene

Graphene has two kinds of edges which have different electronic properties. A singular electronic state emerges at zigzag edges, while it disappears at armchair edges. We study the edge-dependent transport properties in few-layer graphene by applying a side gate voltage to the edge with an ionic liquid. The devices indicating a conductance peak at the charge neutrality point have zigzag edges, confirmed by micro-Raman spectroscopy mapping. The hopping transport between zigzag edges increases the conductance.

Emergence of Multiple Superconducting Phases in (NH3)yMxFeSe (M: Na and Li).

We previously discovered multiple superconducting phases in the ammoniated Na-doped FeSe material, (NH3)yNaxFeSe. To clarify the origin of the multiple superconducting phases, the variation of Tc was fully investigated as a function of x in (NH3)yNaxFeSe. The 32 K superconducting phase is mainly produced in the low-x region below 0.4, while only a single phase is observed at x  =  1.1, with Tc =  45 K, showing that the Tc depends significantly on x, but it changes discontinuously with x. The crystal structure of (NH3)yNaxFeSe does not change as x increases up to 1.1, i.e., the space group of I4/mmm. The lattice constants, a and c, of the low-Tc phase (Tc = 32.5 K) are 3.9120(9) and 14.145(8) Å, respectively, while a = 3.8266(7) Å and c = 17.565(9) Å for the high-Tc phase (~46 K). The c increases in the high Tc phase, implying that the Tc is directly related to c. In (NH3)yLixFeSe material, the Tc varies continuously within the range of 39 to 44 K with changing x. Thus, the behavior of Tc is different from that of (NH3)yNaxFeSe. The difference may be due to the difference in the sites that the Na and Li occupy.

Parity effects in few-layer graphene.

We study the electronic properties in few-layer graphenes (FLGs) classified by even/odd layer number n. FLGs with even n have only parabolic energy dispersions, whereas FLGs with odd n have a linear dispersion besides parabolic ones. This difference leads to a distinct density of states in FLGs, experimentally confirmed by the gate-voltage dependence of the electric double-layer capacitance. Thus, FLGs with odd n are unique materials that have relativistic carriers originating in linear energy dispersion.

Electric-double-layer transistors with thin crystals of FeSe1−xTex (x = 0.9 and 1.0)

Field-effect transistor (FET) devices using thin crystals of FeSe1−xTex (x = 0.9 and 1.0) have been fabricated with an electric-double-layer (EDL) capacitor. Despite the presence of substantial quantities of electron and hole carriers in the bulk due to the semimetallic electronic structure of FeSe1−xTex, we have observed p-channel depletion-type FET characteristics, in contrast to the n-channel normally on FET characteristics of a Bi2Se3 EDL FET. In FeSe1−xTex, the mobile carriers, holes, are depleted in the channel region by accumulating electrons, resulting in a decrease in conductivity. This result is consistent with the experimentally observed positive Hall coefficient at room temperature.

Photoelectron Holographic Atomic Arrangement Imaging of Cleaved Bimetal-intercalated Graphite Superconductor Surface.

From the C 1s and K 2p photoelectron holograms, we directly reconstructed atomic images of the cleaved surface of a bimetal-intercalated graphite superconductor, (Ca, K)C8, which differed substantially from the expected bulk crystal structure based on x-ray diffraction (XRD) measurements. Graphene atomic images were collected in the in-plane cross sections of the layers 3.3 Å and 5.7 Å above the photoelectron emitter C atom and the stacking structures were determined as AB- and AA-type, respectively. The intercalant metal atom layer was found between two AA-stacked graphenes. The K atomic image revealing 2 × 2 periodicity, occupying every second centre site of C hexagonal columns, was reconstructed, and the Ca 2p peak intensity in the photoelectron spectra of (Ca, K)C8 from the cleaved surface was less than a few hundredths of the K 2p peak intensity. These observations indicated that cleavage preferentially occurs at the KC8 layers containing no Ca atoms.

Electrostatic electron-doping yields superconductivity in LaOBiS2

Electrostatic carrier-doping is attracting serious attention as a meaningful technique for producing interesting electronic states in two-dimensional (2D) layered materials. Ionic-liquid gating can provide the critical carrier density required to induce the metal-insulator transition and superconductivity. However, the physical properties of only a few materials have been controlled by the electrostatic carrier-doping during the past decade. Here, we report an observation of superconductivity in a 2D layered material, LaOBiS2, achieved by the electrostatic electron-doping. The electron doping of LaOBiS2 induced metallic conductivity in the normally insulating LaOBiS2, ultimately led to superconductivity. The superconducting transition temperature, Tc, was 3.6 K, higher than the 2.7 K seen in LaO1-xFxBiS2 with an electron-doped BiS2 layer. A rapid drop in resistance (R) was observed at low temperature, which disappeared with the application of high magnetic fields, implying a superconducting state. This st...