Éric Imbernon

New lateral DMOS and IGBT structures realized on a partial SOI substrate based on LEGO process

In this paper, we present new lateral DMOS and IGBT structures based on a partial SOI substrate. The partial SOI substrate, formed through LEGO recrystallization process improves considerably the breakdown capability and the thermal behavior of these devices compared to full SOI devices. Experimental results of high voltage power devices implemented on such a process are presented for the first time.

Realization of vertical P/sup +/ walls through-wafer for bi-directional current and voltage power integrated devices

P/sup +/ walls through wafer can be considered as a region key in the 3D architecture of new bi-directional current and voltage power integrated devices. In this paper, we demonstrate the possibility of fabricating these P/sup +/ walls combining the deep RIE of silicon and deposit of boron doped polysilicon.

Flexible technological process for functional integration

In this paper, a flexible technological process suitable for the development of complex integrated power structures based on the functional integration mode is presented. This technological process is based on a succession of basic technological steps corresponding to the fabrication of IGBT devices and compatible specific steps supporting more complex functions.

Short-circuit protection structure for insulated gate power devices

In this paper, we present a new integrated structure which can protect insulated gate power devices (lGBT, MMOS, EST, ... ) from short-circuit operating mode. This strnctnre is built with an anode voltage sensor, a delay LDMOS transistor, a LDMOS transistor allowing the power device gate unload and a Zener diode. It is notable that this protection structure is fully compatible with a power device technological process. The operating mode and the flrst optimization of the protection structure are presented. For this, IGBT is used as test device. 2D simulations are performed with ISE TCAD. First experimental results of the anode voltage sensor are given and compared with simulation results.

Realization of vertical P + wall through-wafer

P+ walls through wafer can be considered as key regions in the 3D architecture of new bi-directional current and voltage power integrated devices. Moreover, these P+ walls can be used as electrical vias in the design of microsystems, in order to make easier 3D packaging. In this paper, we demonstrate the possibility of fabricating these P+ walls combining the deep RIE of silicon and deposit of boron-doped polysilicon.

Thyristor dual disjoncteur intégré pour convertisseur à commutation automatique

In this paper, a detailed analysis of the new monolithically integrated power device dedicated for self switching converters is carried out. This new functionality, based on the functional integration concept, integrates within a silicon die protection functions, self-control and a power switch. The originality of the device resides in its dynamic behaviour. The device uses a new type of switching mode: the self-switching, which includes protection within the switching process . The analyses of the device operating principles as well as the optimization steps rely on 2D physical simulations.

Interaction analysis and insulation techniques for short-circuit integrated protection structure

One of the steps of the power components reliability improvement is to integrate protection structures (Robb, 1994 and Yeki, 1994). An integrated structure which protect IGBT against short-circuit conditions has already been studied. This structure has been studied and improved for its integration in a classical IGBT technological process (Caramel, 2006). Generally, the integration of protection structures and power devices on the same substrate leads to insulation problems. In order to overcome these problems for our application, we propose in these paper three insulation techniques compatible with a classical IGBT technological process. [2D] numerical simulations have been thus performed in order to highlight the necessity of insulation and for compare the insulation techniques efficiency