Eric J. Stanton

Heterogeneous Silicon Photonic Integrated Circuits

We review recent breakthroughs in the silicon photonic technology and components, and describe progress in silicon photonic integrated circuits. Heterogeneous silicon photonics has recently demonstrated performance that significantly outperforms native III/V components. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications, sensors, and silicon electronics is reviewed.

Multi-octave spectral beam combiner on ultra-broadband photonic integrated circuit platform

We present the design of a novel platform that is able to combine optical frequency bands spanning 4.2 octaves from ultraviolet to mid-wave infrared into a single, low M2 output waveguide. We present the design and realization of a key component in this platform that combines the wavelength bands of 350 nm - 1500 nm and 1500 nm - 6500 nm with demonstrated efficiency greater than 90% in near-infrared and mid-wave infrared. The multi-octave spectral beam combiner concept is realized using an integrated platform with silicon nitride waveguides and silicon waveguides. Simulated bandwidth is shown to be over four octaves, and measured bandwidth is shown over two octaves, limited by the availability of sources.

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

Heterogeneous Integration for Mid-infrared Silicon Photonics

Heterogeneous integration enables the construction of silicon (Si) photonic systems, which are fully integrated with a range of passive and active elements including lasers and detectors. Numerous advancements in recent years have shown that heterogeneous Si platforms can be extended beyond near-infrared telecommunication wavelengths to the mid-infrared (MIR) (2–20 μm) regime. These wavelengths hold potential for an extensive range of sensing applications and the necessary components for fully integrated heterogeneous MIR Si photonic technologies have now been demonstrated. However, due to the broad wavelength range and the diverse assortment of MIR technologies, the optimal platform for each specific application is unclear. Here, we overview Si photonic waveguide platforms and lasers at the MIR, including quantum cascade lasers on Si. We also discuss progress toward building an integrated multispectral source, which can be constructed by wavelength beam combining the outputs from multiple lasers with arrayed waveguide gratings and duplexing adiabatic couplers.

Recent advances in silicon photonic integrated circuits

We review recent breakthroughs in silicon photonics technology and components and describe progress in silicon photonic integrated circuits. Heterogeneous silicon photonics has recently demonstrated performance that significantly outperforms native III-V components. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications, sensors and silicon electronics is reviewed.

Low-loss arrayed waveguide grating at 760 nm.

An arrayed waveguide grating (AWG) at 760 nm is demonstrated with an insertion loss smaller than 0.5 dB. Interface roughness and waveguide length errors contribute much more to scattering loss and phase errors at 760 nm than at longer wavelengths, thus requiring improved design and fabrication. This Letter details how this is achieved by minimizing interfacial scattering, grating side-order excitation, and phase errors in the AWG. With silicon nitride core and silicon dioxide clad waveguides on silicon, this AWG is compatible with heterogeneously integrated lasers for on-chip spectral beam combining.

Micro-resonator soliton generated directly with a diode laser

An external-cavity diode laser is reported with ultralow noise, high power coupled to a fiber, and fast tunability. These characteristics enable the generation of an optical frequency comb in a silica micro-resonator with a single-soliton state. Neither an optical modulator nor an amplifier was used in the experiment. This demonstration greatly simplifies the soliton generation setup and represents a significant step forward to a fully integrated soliton comb system.

Compact Modeling for Silicon Photonic Heterogeneously Integrated Circuits

Photonic-integrated circuits fabricated on a heterogeneously integrated silicon platform have demonstrated record levels of integration and communication capacity. As photonic-integrated circuits become larger and more complex, designing and analyzing them demand modeling and simulation methodologies employed in matured electronic design automation. In this paper, the development of compact models for the building blocks of a fabricated optical network-on-a-chip is introduced. These models are implemented in both SPICE-compatible electronics design automation tools and dedicated photonic-circuit simulators. Model validation is conducted at both device and link levels, allowing the circuit designer to study the impact of individual device design on the overall link performance, paving the path for model-based design optimization of photonic-integrated circuits.

Building the future of WaferSat spacecraft for relativistic spacecraft

Recently, there has been a dramatic change in the way space missions are viewed. Large spacecraft with massive propellant-filled launch stages have dominated the space industry since the 1960’s, but low-mass CubeSats and low-cost rockets have enabled a new approach to space exploration. In recent work, we have built upon the idea of extremely low mass (sub 1 kg), propellant-less spacecraft that are accelerated by photon propulsion from dedicated directed-energy facilities. Advanced photonics on a chip with hybridized electronics can be used to implement a laser-based communication system on board a sub 1U spacecraft that we call a WaferSat. WaferSat spacecraft are equipped with reflective sails suitable for propulsion by directed-energy beams. This low-mass spacecraft design does not require onboard propellant, creating significant new opportunities for deep space exploration at a very low cost. In this paper, we describe the design of a prototype WaferSat spacecraft, constructed on a printed circuit board. The prototype is envisioned as a step toward a design that could be launched on an early mission into Low Earth Orbit (LEO), as a key milestone in the roadmap to interstellar flight. In addition to laser communication, the WaferSat prototype includes subsystems for power source, attitude control, digital image acquisition, and inter-system communications.

Development of quantum and interband cascade lasers on silicon (Conference Presentation)

We are developing midwave infrared (mid-IR) quantum cascade lasers (QCLs) and interband cascade lasers (ICLs) bonded to silicon. The heterogeneous integration of mid-IR photonic devices with silicon promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and electronic technologies. The first Fabry-Perot QCLs on silicon were bonded to pre-patterned silicon-on-nitride-on-insulator (SONOI) substrates. Lateral tapers in the III-V mesas transferred the optical mode from the hybrid III-V/Si active region into the passive silicon waveguides, with feedback provided by reflections from both the III-V tapers and the polished passive silicon facets. Lasing was observed at   4.8 m with threshold current densities as low as 1.6 kA/cm2 when operated in pulsed mode at T = 20 oC. The first mid-IR DFB lasers integrated on silicon employed gratings patterned into the silicon waveguides before bonding. Over 200 mW of pulsed power was generated at room temperature, and operated to 100 °C with T0 = 199 K. Threshold current densities were measured below 1 kA/cm2.The grating imposed considerable wavelength selectivity and 22 nm of thermal tuning, even though the emission was not spectrally pure. Ongoing research focuses on flip-chip bonding to improve heat sinking for continuous-wave operation, and arrayed waveguide gratings for beam combining. ICLs have also been bonded to silicon and the GaSb substrate has been chemically removed with an InAsSb etch-stop layer. Tapered ICL ridges designed for lasing in a hybrid III-V/Si mode have been processed above passive silicon waveguides patterned on SOI. A goal is to combine the power generated by arrays of QCLs and ICLs residing on the same chip into a single, high-quality output beam.