Eric Lavallee

Method for fabricating submicron silicide structures on silicon using a resistless electron beam lithography process

A novel resistless lithography process using a conventional electron beam system is presented. Metallic lines with widths of less than 50 nm were produced on silicon substrates. The process is based on localized heating with a focused electron beam of thin platinum layers deposited on silicon. It is demonstrated that silicide formation occurs at the Pt-Si interface. By using a dilute solution of aqua regia, it is possible to obtain a sufficient difference in etch rates between exposed and unexposed regions of the platinum thin film to selectively remove only the unexposed areas.

Nano patterning on optical fiber and laser diode facet with dry resist

Semiconductor micro and nanofabrication lithography techniques for application in microelectronics as well as in micromechanics and optoelectronics can gain significantly from using a dry resist process, since it enables the deposition of a very uniform lithographically sensitive layer on a potentially very small area. This would otherwise be extremely difficult to achieve by using a traditional spin coated resist, such as poly(methylmethacrylate) (PMMA). We demonstrate the use of an electron sensitive sterol based evaporated electron beam resist to fabricate high-resolution features (down to 100 nm) on a small surface area. This electron beam resist has a sensitivity comparable to PMMA and is deposited using a simple thermal evaporation. Two practical applications are explored: first, this resist makes it possible to fabricate a Fresnel zone plate lens on the tip of an optical fiber in order to demonstrate the principle and the potential of highly efficient coupling of diode laser emission into the fiber...

The Impact of Charging on Low-Energy Electron Beam Lithography

A major issue in low voltage lithography is surface charging, which results in beam deflection presented as uneven exposure between adjacent structures. In this study, charge-induced pattern distortions in low-voltage energy beam lithography (LVEBL) were investigated using a silicide direct-write electron beam lithography process. Two methodologies have been proposed to avert charging effects in LVEBL, namely, pattern randomizing and lithography using the crossover voltage. Experimental results demonstrated that these methods are effective in significantly reducing the problems associated with charging. They indicate that charging on a sample is a function of time interval and proximity between line structures. In addition, the optimum time and distance between exposures for no charge-induced pattern distortion were determined. By using the crossover voltage of the material for lithography, charging effect can be significantly minimized.

Radioisotopic purity of sodium pertechnetate 99mTc produced with a medium-energy cyclotron: implications for internal radiation dose, image quality, and release specifications

Cyclotron production of 99mTc is a promising route to supply 99mTc radiopharmaceuticals. Higher 99mTc yields can be obtained with medium-energy cyclotrons in comparison to those dedicated to PET isotope production. To take advantage of this capability, evaluation of the radioisotopic purity of 99mTc produced at medium energy (20–24 MeV) and its impact on image quality and dosimetry was required. Methods: Thick 100Mo (99.03% and 99.815%) targets were irradiated with incident energies of 20, 22, and 24 MeV for 2 or 6 h. The targets were processed to recover an effective thickness corresponding to approximately 5-MeV energy loss, and the resulting sodium pertechnetate 99mTc was assayed for chemical, radiochemical, and radionuclidic purity. Radioisotopic content in final formulation was quantified using γ-ray spectrometry. The internal radiation dose for 99mTc-pertechnetate was calculated on the basis of experimentally measured values and biokinetic data in humans. Planar and SPECT imaging were performed using thin capillary and water-filled Jaszczak phantoms. Results: Extracted sodium pertechnetate 99mTc met all provisional quality standards. The formulated solution for injection had a pH of 5.0−5.5, contained greater than 98% of radioactivity in the form of pertechnetate ion, and was stable for at least 24 h after formulation. Radioisotopic purity of 99mTc produced with 99.03% enriched 100Mo was greater than 99.0% decay corrected to the end of bombardment (EOB). The radioisotopic purity of 99mTc produced with 99.815% enriched 100Mo was 99.98% or greater (decay corrected to the EOB). The estimated dose increase relative to 99mTc without any radionuclidic impurities was below 10% for sodium pertechnetate 99mTc produced from 99.03% 100Mo if injected up to 6 h after the EOB. For 99.815% 100Mo, the increase in effective dose was less than 2% at 6 h after the EOB and less than 4% at 15 h after the EOB when the target was irradiated at an incident energy of 24 MeV. Image spatial resolution and contrast with cyclotron-produced 99mTc were equivalent to those obtained with 99mTc eluted from a conventional generator. Conclusion: Clinical-grade sodium pertechnetate 99mTc was produced with a cyclotron at medium energies. Quality control procedures and release specifications were drafted as part of a clinical trial application that received approval from Health Canada. The results of this work are intended to contribute to establishing a regulatory framework for using cyclotron-produced 99mTc in routine clinical practice.

Assessment of inflammation in large arteries with 18F-FDG-PET in elderly.

This paper presents repeated measurements of atherosclerosis using bimodality positron emission tomography and computed tomography (PET/CT) with 18F-fluorodeoxyglucose (18F-FDG) to assess its uptake in aorta, iliac and femoral arteries in three groups of elderly subjects classified as normals (N), hypercholesterolemics (H) and with stable angina (A) in a 12 months follow-up (T0 to T12). The subjects in group H were taking rosuvastatin (20mg/d) for 12 months before the second scan. The calcifications in the arteries were determined by CT imaging and the artery PET images were analyzed slice by slice. The standard uptake values (SUVs) for 18F-FDG uptake were classified in two main groups: calcified and non-calcified arteries and each main group comprises six sub-groups for the three subject groups N, H and A, and for the two measurements 12 months apart. Although the calcifications were present at some portions of the arteries in all subjects (23%, 36% and 44% of calcified sites to total sites analyzed, respectively, in groups N, H and A), the results show the most noticeable SUV changes after 12 months was in group N of non-calcified arteries. In the three groups, the calcified arteries showed no significant differences between T0 and T12 while significant differences were observed for the non-calcified arteries. However, there were no significant changes at T12 between groups N and H following rosuvastatin intake in group H. In conclusion, the quantitative analysis with 18F-FDG-PET/CT could be efficient in the localization of the inflammation and evaluation of its progression in atherosclerosis instead of global evaluations with systemic inflammation biomarkers.

Arrays of holes fabricated by electron-beam lithography combined with image reversal process using nickel pulse reversal plating

A critical issue in fabricating arrays of holes is to achieve high-aspect-ratio structures. Formation of ordered arrays of nanoholes in silicon nitride was investigated by the use of ultrathin hard etch mask formed by nickel pulse reversal plating to invert the tonality of a dry e-beam resist patterned by e-beam lithography. Ni plating was carried out using a commercial plating solution based on nickel sulfamate salt without organic additives. Reactive ion etching using SF6/CH4 was found to be very effective for pattern transfer to silicon nitride. Holes array of 100 nm diam, 270 nm period, and 400 nm depth was fabricated on a 5×5 mm2 area.

Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures

We report on a study of the fabrication of submicron silicide structures with a resistless lithography technique. Several different metals can be used as a basis for producing silicide using this method; in this work, results will be discussed for both platinum and nickel silicide. The feasibility of producing nanostructures using polycrystalline silicon as a base growth layer for metal–oxide–semiconductor, and other device applications have also been demonstrated. Threshold doses for this method for submicron lines (<50 nm) and square areas were obtained in order to establish a framework for the fabrication of more complex devices. Preliminary electrical measurements were carried out which indicate that the resistivity of the silicide is 45 μΩ cm, and that the barrier height of the silicide/(high resistivity silicon) interface is 0.56 eV.

Clinical Trial Using Sodium Pertechnetate 99mTc Produced with Medium-Energy Cyclotron: Biodistribution and Safety Assessment in Patients with Abnormal Thyroid Function

A single-site prospective open-label clinical study with cyclotron-produced sodium 99mTc-pertechnetate (99mTc-NaTcO4) was performed in patients with indications for a thyroid scan to demonstrate the clinical safety and diagnostic efficacy of the drug and to confirm its equivalence with conventional 99mTc-NaTcO4 eluted from a generator. Methods: 99mTc-NaTcO4 was produced from enriched 100Mo (99.815%) with a cyclotron (24 MeV; 2 h of irradiation) or supplied by a commercial manufacturer (bulk vial eluted from a generator). Eleven patients received 325 ± 29 (mean ± SD) MBq of the cyclotron-produced 99mTc-NaTcO4, whereas the age- and sex-matched controls received a comparable amount of the generator-derived tracer. Whole-body and thyroid planar images were obtained for each participant. In addition to the standard-energy window (140.5 keV ± 7.5%), data were acquired in lower-energy (117 keV ± 10%) and higher-energy (170 keV ± 10%) windows. Vital signs and hematologic and biochemical parameters were monitored before and after tracer administration. Results: Cyclotron-produced 99mTc-NaTcO4 showed organ and whole-body distributions identical to those of conventional 99mTc-NaTcO4 and was well tolerated. All images led to a clear final diagnosis. The fact that the number of counts in the higher-energy window was significantly higher for cyclotron-produced 99mTc-NaTcO4 did not influence image quality in the standard-energy window. Image definition in the standard-energy window with cyclotron-produced 99mTc was equivalent to that with generator-eluted 99mTc and had no particular features allowing discrimination between the 99mTc production methods. Conclusion: The systemic distribution, clinical safety, and imaging efficacy of cyclotron-produced 99mTc-NaTcO4 in humans provide supporting evidence for the use of this tracer as an equivalent for generator-eluted 99mTc-NaTcO4 in routine clinical practice.

Fabrication of x-ray masks using evaporated electron sensitive layers for back patterning of membranes

A process aimed at fabricating proximity x-ray lithography masks is presented. In this technique, the Ta absorber layer is deposited and patterned on the back side of the membrane and nonspin-coated electron sensitive layers were used in order to achieve high resolution patterning of this absorber. The advantages gained by this approach include a reduction of the membrane temperature during the plasma etching step of the absorber patterns without using any cooling gas. This temperature reduction results from the direct contact of the membrane with a cooling plate. This approach also allows increased protection of the absorber patterns from contamination during exposure of the mask. A third advantage is that the smooth surface of the mask exposed to the wafer in the x-ray lithography stepper may also make it possible to reduce the gap between wafer and mask, thus achieving increased resolution with the x-ray lithography process.

Resist sensitivity and thickness-based beam count optimization for parallel low energy E-beam exposure systems

Proximity effects during electron beam exposure have been kept under control by using sophisticated correction algorithms and software, combined with a strategy which aims at increasing the electron beam energy to 50 keV and 100 keV. At these energies, the proximity effects are more uniform and provide a situation where they are easier to correct. However, as feature sizes shrink, and the pattern density increases, this task becomes extremely complex, since tolerances to pattern definition errors are becoming more restricted. An alternate approach is to move to lower electron energies where proximity effects become negligible. Several programs are underway to develop massively parallel electron beam (MPEB) writer systems that have greatly reduced energy in the ≤5keV regime. Selection of the electron beam energy becomes critical below 10 keV, since the tolerance window where proximity effects are indeed negligible is very small. A shot noise model has been elaborated providing minimum exposure doses required for resists at technology nodes of 45 nm and below. These doses increase rapidly with reducing linewidth and impose a minimum number of electron beams for MPEB systems in order to be able to pattern a surface corresponding to a standard full field 6 inch reticle in a reasonable time, and to directly pattern 300 mm wafers at rates of 5, 50 and 100 wafers per hour. An overall set of results is obtained indicating minimum number of electron beams and electron beam current.