Eric Vinet

Integrated InP Heterodyne Millimeter Wave Transmitter

A monolithically integrated tunable heterodyne source designed for the generation and modulation of sub-terahertz signals is demonstrated. Distributed feedback lasers, semiconductor optical amplifier amplifiers, passive waveguides, beam combiners, electro-optic modulators, and high-speed photodetectors have been monolithically integrated on the same InP-based platform. Millimeter wave generation at up to 105 GHz based on heterodyning the optical tones from two integrated lasers in the integrated high bandwidth unitraveling-carrier photodetector has been demonstrated. This photonic integrated chip was used in a 100-Mb/s OOK wireless transmission experiment using the integrated amplitude modulator.

High Power Three-Section Integrated Master Oscillator Power Amplifier at 1.5 μm

We present the design and the performance of a monolithically integrated master oscillator power amplifier at 1.5 μm. The three-section device includes a distributed feedback laser, a modulation section, and a high power tapered amplifier. In order to mitigate the coupling effects of the light reflected at the facets, the device has been designed with a bent longitudinal axis and a tilted front facet. The device delivers >400 mW mode-hopping free output power. In static regime, the modulation section allows an extinction ratio of 35 dB.

Analog microwave photonic link based on a high power directly modulated laser, a high power photodiode and passive impedance matching

We report on the design and characterization of a high-power and high dynamic range directly modulated analog fiber optic link in the S (2-4 GHz) band. The link is amplifier free, and uses passive impedance matching networks associated to high power laser diode and high power photodiode. Thanks to the high components efficiencies, together with the benefit of reactive impedance matchings, we achieved a high gain (≥ 0 dB) over 500 MHz bandwidths. Moreover, the use of high power and high linearity components allowed us to achieve simultaneously an output -1dB compression point higher than 20 dBm, and an output third order intercept point (OIP3) of more than 31 dBm. The measured spurious free dynamic range is as high as 114 dB.Hz2/3.

Wide Optical Bandwidth and High Output Power Superluminescent Diode Covering C and L Band

We report on the development of a novel superluminescent diode (SLD) design with high output power and a wide optical bandwidth operation. The SLD combines an asymmetrical cladding structure for reduced internal losses and thick quantum wells to obtain emission from both the fundamental level and the first excited level. The

Asymmetrical cladding quantum dash mode-locked laser for Terahertz wide frequency comb

{-}{\rm 3}~{\rm dB}

High-pulse energy-stabilized passively mode-locked external cavity inverse bow-tie 990nm laser diode for space applications

optical bandwidth is equal to 135 nm for a 2-mm long device. For longer devices, the optical bandwidth is slightly reduced but the optical output power increases. By reinjecting a part of the optical power using an external reflector we obtain 27 mW of output power.

Monolithic InP master oscillator power amplifier for free space optical transmissions at 1.5 µm

We have developed a quantum dash (QDs) mode locked laser (MLL) using an asymmetrical cladding for high frequencies microwave generation. The laser exhibits more than 400 mW output power. The optical comb is 9.2 nm wide with 10 GHz free spectral range. Thanks to optical compression we have increased the signal to noise ratio by 25 dB. The MLL can be locked on an external source. We have demonstrated RF lines from 10 to 120 GHz with 10 GHz spacing.

Lasing dynamics of very long (13.5mm) tapered laser emitting at 975 nm

We report on multi-section inverse bow-tie laser producing mode-locked pulses of 90 pJ energy and 6.5 ps width (895 fs after compression) at 1.3 GHz pulse repetition frequency (PRF) and consuming 2.9 W of electric power. The laser operates in an 80 mm long external cavity. By translation of the output coupling mirror, the PRF was continuously tuned over 37 MHz range without additional adjustments. Active stabilization with a phase lock loop actuating on the driving current has allowed us to reach the PRF relative stability at a 2·10-10 level on 10 s intervals, as required by the European Space Agency (ESA) for inter-satellite long distance measurements.

MONOLITHIC MASTER OSCILLATOR POWER AMPLIFIER AT 1.58 µM FOR LIDAR MEASUREMENTS

Interest in free space optical communications has increased in the last decades as it has many advantages over RF communications, especially for space-borne applications. However, high power, good spectral quality and beam quality are needed for efficient data transmission over long distances. To meet the need of having lightweight and compact laser sources with such qualities for FSO, semiconductor based MOPA systems (Master Oscillator Power Amplifier) have been developed. In this paper we present the experimental results and compare them to simulation results for a threesection monolithically integrated semiconductor Master Oscillator Power Amplifier emitting at 1.5 μm wavelengths, designed for LIDAR applications that can also be used for free space telecommunications. The MOPA includes a distributed feedback laser section for single mode light emission, an intermediate section for data modulation and a flared semiconductor optical amplifier section for power amplification, which allows us to generate a high power beam with good spectral characteristics. The impact of bias conditions of the different device sections and device design on performances have been studied. Single mode operation at 4 different wavelengths near 1550 nm is achieved for optical output power up to 400 mW in continuous-wave (CW) regime for a SOA current of 3 A and 800 mW for SOA pulsed operation for currents up to 5 A. Near-field profile is also analyzed for different modulator current. Small-signal dynamic response is measured and analyzed.

High performances of very long (13.5mm) tapered laser emitting at 975 nm

Mode-locked semiconductor laser technology is a promising technology candidate considered by European Space Agency (ESA) for optical metrology systems and other space applications in the context of high-precision optical metrology, in particular for High Accuracy Absolute Long Distance Measurement. For these applications, we have designed, realized and characterized a multi-section monolithic-cavity tapered laser diode with a record cavity length of 13.5mm. The laser operates at 975nm wavelength with average output power up to 600mW. It is based on a MOVPE grown laser structure with Aluminium free active region enabling high optical gain, low internal losses and low series resistance. It reaches passive mode-locking operation on fundamental cavity round trip frequency of 2.88GHz with chirped pulse width of 6.2ps and time bandwidth product of 8 for the average output power of 250mW. Alongside with passive mode-locking operation, we discuss other lasing regimes in these very long tapered lasers.