Esther Alarcon-Llado

III–V nanowire arrays: growth and light interaction

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays obtained by molecular beam epitaxy and the design of III-V nanowire arrays on silicon for solar cells. While InAs tends to grow in a relatively straightforward manner on patterned (111)Si substrates, GaAs nanowires remain more challenging; success depends on the cleaning steps, annealing procedure, pattern design and mask thickness. Nanowire arrays might also be used for next generation solar cells. We discuss the photonic effects derived from the vertical configuration of nanowires standing on a substrate and how these are beneficial for photovoltaics. Finally, due to the special interaction of light with standing nanowires we also show that the Raman scattering properties of standing nanowires are modified. This result is important for fundamental studies on the structural and functional properties of nanowires.

Field-effect passivation on silicon nanowire solar cells

Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

Dual wavelength sensing based on interacting gold nanodisk trimers

Fabrication and surface plasmon properties of gold nanostructures consisting of periodic arrays of disk trimers are reported. Using electron beam lithography, disk diameters as small as 96 nm and gaps between disks as narrow as 10 nm have been achieved with an unprecedented degree of control and reproducibility. The disk trimers exhibit intense visible and infrared surface plasmon resonances which are studied as a function of the disk diameter and of the pitch between trimers. Based on simulations of the optical extinction spectra and of the electric near-field intensity maps, the resonances are assigned to a single trimer response and to collective surface plasmon excitations involving electromagnetic interaction between the trimers. The sensing properties of the disk trimers are investigated using various coating media. The reported results demonstrate the possible use of gold disk trimers for dual wavelength chemical sensing.

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

The influence of the oxide in Ga-assisted growth of GaAs nanowires on Si substrates is investigated. Three different types of oxides with different structure and chemistry are considered. We observe that the critical oxide thicknesses needed for achieving nanowire growth depends on the nature of oxide and how it is processed. Additionally, we find that different growth conditions such as temperature and Ga rate are needed for successful nanowire growth on different oxides. We generalize the results in terms of the characteristics of the oxides such as surface roughness, stoichiometry and thickness. These results constitute a step further towards the integration of GaAs technology on the Si platform.

Raman spectroscopy of self-catalyzed GaAs 1 x Sb x nanowires grown on silicon

Thanks to their wide band structure tunability, GaAs(1-x)Sb(x) nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their optical and electronic properties. Raman scattering provides information on the vibrational properties of materials, which can be related to the composition and strain. We present a systematic study of the vibrational properties of GaAs(1-x)Sb(x) nanowires for Sb contents from 0 to 44%, as determined by energy-dispersive x-ray analyses. We find that optical phonons red-shift with increasing Sb content. We explain the shift by alloying effects, including mass disorder, dielectric changes and ionic plasmon coupling. The influence of Sb on the surface optical modes is addressed. Finally, we compare the luminescence yield between GaAs and GaAs(1-x)Sb(x), which can be related to a lower surface recombination rate. This work provides a reference for the study of ternary alloys in the form of nanowires, and demonstrates the tunability and high material quality of gold-free ternary antimonide nanowires directly grown on silicon.

Characterization and analysis of InAs/p-Si heterojunction nanowire-based solar cell

The growth of compound semiconductor nanowires on the silicon platform has opened many new perspectives in the area of electronics, optoelectronics and photovoltaics. We have grown a 1 x 1 mm(2) array of InAs nanowires on p-type silicon for the fabrication of a solar cell. Even though the nanowires are spaced by a distance of 800 nm with a 3.3% filling volume, they absorb most of the incoming light resulting in an efficiency of 1.4%. Due to the unfavourable band alignment, carrier separation at the junction is poor. Photocurrent increases sharply at the surrounding edge with the silicon, where the nanowires do not absorb anymore. This is further proof of the enhanced absorption of semiconductors in nanowire form. This work brings further elements in the design of nanowire-based solar cells.

Efficient Multiterminal Spectrum Splitting via a Nanowire Array Solar Cell

Nanowire-based solar cells opened a new avenue for increasing conversion efficiency and rationalizing material use by growing different III–V materials on silicon substrates. Here, we propose a multiterminal nanowire solar cell design with a theoretical conversion efficiency of 48.3% utilizing an efficient lateral spectrum splitting between three different III–V material nanowire arrays grown on a flat silicon substrate. This allows choosing an ideal material combination to achieve the proper spectrum splitting as well as fabrication feasibility. The high efficiency is possible due to an enhanced absorption cross-section of standing nanowires and optimization of the geometric parameters. Furthermore, we propose a multiterminal contacting scheme that can be fabricated with a technology close to standard CMOS. As an alternative we also consider a single power source with a module level voltage matching. These new concepts open avenues for next-generation solar cells for terrestrial and space applications.

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering properties. In this paper we study how to tune the morphology of the membranes by changing the growth conditions. We examine the role of the V/III ratio, substrate temperature, mask opening size and inter-hole distances in determining the size and shape of the structures. Our results show that the nano-membranes form by a combination of the growth mechanisms of nanowires and the Stranski-Krastanov type of quantum dots: in analogy with nanowires, the length of the membranes strongly depends on the growth temperature and the V/III ratio; the inter-hole distance of the sample determines two different growth regimes: competitive growth for small distances and an independent regime for larger distances. Conversely, and similarly to quantum dots, the width of the nano-membranes increases with the growth temperature and does not exhibit dependence on the V/III ratio. These results constitute an important step towards achieving rational design of high aspect-ratio nanostructures.

Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering

The authors report on a Raman scattering study of self-heating in InGaN/GaN-based thin film vertical light emitting diode (VLED) on copper successfully transferred from silicon (111). The LED structures grown on bulk Si are transferred to a copper substrate host using electroplating and sacrificial removal of silicon by grinding, lapping and dry etching. The light emission characteristics of such VLEDs are studied by electroluminescence measurements. Due to self-heating at very high injection current, the temperature of the p-side down VLED without encapsulation and packaging increases rapidly and correlates well with the I-V characteristics. The Raman measurements allow probing of temperature profiles when these VLEDs are driven at current up to 1 A.

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

Any device exposed to ambient conditions will be prone to oxidation. This may be of particular importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using a focused laser beam. Polarization dependent micro-Raman measurements confirmed the presence of crystalline arsenic, and transmission electron microscopy diffraction showed the presence of indium oxide. The surface dependence of the oxidation was investigated in branched nanowires grown along the [Formula: see text] and [Formula: see text] wurtzite crystal directions exhibiting different surface facets. The oxidation did not occur at the [Formula: see text] direction. The origin of this selectivity is discussed in terms transition state kinetics of the free surfaces of the different crystal families of the facets and numerical simulations of the laser induced heating.