Ethan D. Minot

Tuning carbon nanotube band gaps with strain.

We show that the band structure of a carbon nanotube (NT) can be dramatically altered by mechanical strain. We employ an atomic force microscope tip to simultaneously vary the NT strain and to electrostatically gate the tube. We show that strain can open a band gap in a metallic NT and modify the band gap in a semiconducting NT. Theoretical work predicts that band gap changes can range between +/-100 meV per 1% stretch, depending on NT chirality, and our measurements are consistent with this predicted range.

Single Quantum Dot Nanowire LEDs

We report reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically driven quantum optics experiments. We have investigated the operation of these nanoLEDs with a consistent series of experiments at room temperature and at 10 K, demonstrating the potential of this system for single photon applications.

Determination of electron orbital magnetic moments in carbon nanotubes

The remarkable transport properties of carbon nanotubes (CNTs) are determined by their unusual electronic structure. The electronic states of a carbon nanotube form one-dimensional electron and hole sub-bands, which, in general, are separated by an energy gap. States near the energy gap are predicted to have an orbital magnetic moment, µorb, that is much larger than the Bohr magneton (the magnetic moment of an electron due to its spin). This large moment is due to the motion of electrons around the circumference of the nanotube, and is thought to play a role in the magnetic susceptibility of CNTs and the magnetoresistance observed in large multiwalled CNTs. But the coupling between magnetic field and the electronic states of individual nanotubes remains to be quantified experimentally. Here we report electrical measurements of relatively small diameter (2–5 nm) individual CNTs in the presence of an axial magnetic field. We observe field-induced energy shifts of electronic states and the associated changes in sub-band structure, which enable us to confirm quantitatively the predicted values for µorb.

Carbon nanotube biosensors: The critical role of the reference electrode

Carbon nanotube transistors show tremendous potential for electronic detection of biomolecules in solution. However, the nature and magnitude of the sensing signal upon molecular adsorption have so far remained controversial. Here, the authors show that the choice of the reference electrode is critical and resolves much of the previous controversy. The authors eliminate artifacts related to the reference electrode by using a well-defined reference electrode to accurately control the solution potential. Upon addition of bovine serum albumin proteins, the authors measure a transistor threshold shift of ?15?mV which can be unambiguously attributed to the adsorption of biomolecules in the vicinity of the nanotube.

Terahertz imaging and spectroscopy of large-area single-layer graphene.

THz imaging and spectroscopy using broadband THz pulses map out the THz carrier dynamics of a large-area graphene-on-Si sample, showing that the local sheet-conductivity varies across the sample from σ<inf>s</inf>, = 1.7×10⁻³ to 2.4×10⁻³ Ω⁻¹.

High-field terahertz response of graphene

We investigate the response of multi-layer epitaxial graphene and chemical vapor deposition (CVD)-grown single-layer graphene to strong terahertz (THz) fields. Contrary to theoretical predictions of strong nonlinear response, the transmitted fields exhibit no harmonic generation, indicating that the nonlinear response is limited by fast electron thermalization due to carrier-carrier scattering. The fast electron heating gives rise to large THz transmission enhancement (>15%) in single-layer CVD graphene at high THz fields (ETHz > 10kVcm 1 ). The nonlinear effects exhibit non-Drude behavior in the THz conductivity, where THz fields induce extreme non-equilibrium electron distributions.

Scalable graphene field-effect sensors for specific protein detection

We demonstrate that micron-scale graphene field-effect transistor biosensors can be fabricated in a scalable fashion from large-area chemical vapor deposition derived graphene. We electrically detect the real-time binding and unbinding of a protein biomarker, thrombin, to and from aptamer-coated graphene surfaces. Our sensors have low background noise and high transconductance, comparable to exfoliated graphene devices. The devices are reusable and have a shelf-life greater than one week.

Identifying Individual Single-Walled and Double-Walled Carbon Nanotubes by Atomic Force Microscopy

We show that the number of concentric graphene cylinders forming a carbon nanotube can be found by squeezing the tube between an atomic force microscope tip and a silicon substrate. The compressed height of a single-walled nanotube (double-walled nanotube) is approximately two (four) times the interlayer spacing of graphite. Measured compression forces are consistent with the predicted bending modulus of graphene and provide a mechanical signature for identifying individual single-walled and double-walled nanotubes.

Photothermoelectric Effect in Suspended Semiconducting Carbon Nanotubes

We have performed scanning photocurrent microscopy measurements of field-effect transistors (FETs) made from individual ultraclean suspended carbon nanotubes (CNTs). We investigate the spatial-dependence, polarization-dependence, and gate-dependence of photocurrent and photovoltage in this system. While previous studies of surface-bound CNT FET devices have identified the photovoltaic effect as the primary mechanism of photocurrent generation, our measurements show that photothermoelectric phenomena play a critical role in the optoelectronic properties of suspended CNT FETs. We have quantified the photothermoelectric mechanisms and identified regimes where they overwhelm the photovoltaic mechanism.

Origins of Charge Noise in Carbon Nanotube Field-Effect Transistor Biosensors

Determining the major noise sources in nanoscale field-effect transistor (nanoFET) biosensors is critical for improving bioelectronic interfaces. We use the carbon nanotube (CNT) FET biosensor platform to examine the noise generated by substrate interactions and surface adsorbates, both of which are present in current nanoFET biosensors. The charge noise model is used as a quantitative framework to show that insulating substrates and surface adsorbates are both significant contributors to the noise floor of CNT FET biosensors. Removing substrate interactions and surface adsorbates reduces the power spectral density of background voltage fluctuations by 19-fold.